JP2014235167A - 放射線シールドを有する半導体検出器 - Google Patents
放射線シールドを有する半導体検出器 Download PDFInfo
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- JP2014235167A JP2014235167A JP2014111579A JP2014111579A JP2014235167A JP 2014235167 A JP2014235167 A JP 2014235167A JP 2014111579 A JP2014111579 A JP 2014111579A JP 2014111579 A JP2014111579 A JP 2014111579A JP 2014235167 A JP2014235167 A JP 2014235167A
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- 230000005855 radiation Effects 0.000 title claims abstract description 126
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 28
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 230000032683 aging Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 48
- 238000010922 spray-dried dispersion Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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Abstract
Description
半導体材料のバルク層と、
前記バルク層の第1面に設けられる、フィールド電極および放射線により誘発された信号電荷を前記バルク層から収集する1個の収集電極の配列と、
前記バルク層の前記第1面と反対側の第2面に設けられ、前記収集電極の位置と選択的にオーバラップする放射線シールドと、
を有している。
Claims (12)
- 半導体材料のバルク層と、
前記バルク層の第1面に設けられる、フィールド電極および放射線により誘発された信号電荷を前記バルク層から収集する1個の収集電極の配列と、
前記バルク層の前記第1面と反対側の第2面に設けられ、前記収集電極の位置と選択的にオーバラップする放射線シールドと、
を有する半導体放射線検出器。 - 前記収集電極に隣接して設けられる増幅器を含み、前記放射線シールドが該増幅器の主要部の位置とオーバラップする請求項1記載の半導体放射線検出器。
- 前記放射線シールドが、前記バルク層を含む材料と同じ1枚の表面に直接接着された材料層である請求項1記載の半導体放射線検出器。
- 前記バルク層の前記第2面側表面に背面側コンタクト層が設けられ、前記放射線シールドが、前記背面側コンタクト層上の被覆層である請求項3記載の半導体放射線検出器。
- 前記バルク層の前記第2面側表面に背面側コンタクト層が設けられ、前記放射線シールドが、前記背面側コンタクト層上の積層体中の1層である請求項3記載の半導体放射線検出器。
- 前記バルク層の前記第2面側表面に背面側コンタクト層が設けられ、前記放射線シールドが、前記背面側コンタクト層に接着され、または付着された材料の一片である請求項3記載の半導体放射線検出器。
- 前記放射線シールドが、前記バルク層の前記第2面側に支持され、空間スペースにより前記バルク層から分離された材料の一片である請求項1記載の半導体放射線検出器。
- 前記放射線シールドから外方に延びる1つまたは2つ以上の支持スポークを含む請求項7記載の半導体放射線検出器。
- 前記放射線シールドがアルミニウムよりも重い材料からなる請求項1記載の半導体放射線検出器。
- 前記放射線シールドが、金、白金、パラジウム、ジルコニウム、モリブデン、銀、インジウム、スズ、タンタル、タングステン、イリジウムおよびビスマスから選ばれる1種の金属である請求項9記載の半導体放射線検出器。
- 前記放射線シールドが、異なる材料の多層からなり、該材料の1つが金、白金、パラジウム、ジルコニウム、モリブデン、銀、インジウム、スズ、タンタル、タングステン、イリジウムおよびビスマスから選ばれる1種の金属である請求項9記載の半導体放射線検出器。
- 前記バルク層が円盤のような形状であり、
前記フィールド電極が1組の同心リングを構成し、特定のサイズのそれぞれのフィールド電極はそれより小さいサイズの全ての他のフィールド電極を取り囲んでおり、
収集電極が、フィールド電極の中心点および前記バルク層の側面の中心点の両方である共通の中心点にあり、またはそれに近接している請求項1記載の半導体放射線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/906,655 | 2013-05-31 | ||
US13/906,655 US9123837B2 (en) | 2013-05-31 | 2013-05-31 | Semiconductor detector with radiation shield |
Publications (2)
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JP2014235167A true JP2014235167A (ja) | 2014-12-15 |
JP6317181B2 JP6317181B2 (ja) | 2018-04-25 |
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JP2014111579A Active JP6317181B2 (ja) | 2013-05-31 | 2014-05-29 | 放射線シールドを有する半導体検出器 |
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US (1) | US9123837B2 (ja) |
EP (1) | EP2808705B1 (ja) |
JP (1) | JP6317181B2 (ja) |
CN (1) | CN104215996B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019117272A1 (ja) * | 2017-12-15 | 2019-06-20 | 株式会社堀場製作所 | シリコンドリフト型放射線検出素子、シリコンドリフト型放射線検出器及び放射線検出装置 |
KR20200006393A (ko) * | 2018-07-10 | 2020-01-20 | 한국과학기술원 | 방사선에 의한 반도체 손상 방지 방법 및 장치 |
WO2023026939A1 (ja) * | 2021-08-25 | 2023-03-02 | 株式会社堀場製作所 | 放射線検出素子、放射線検出器、放射線検出装置及び放射線検出素子の製造方法 |
JP7423423B2 (ja) | 2020-05-28 | 2024-01-29 | 株式会社日立製作所 | 半導体検出器およびその製造方法 |
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EP3032281B1 (en) * | 2014-12-11 | 2019-09-25 | PNSensor GmbH | Semiconductor drift detector for detecting radiation |
ITUB20159644A1 (it) * | 2015-12-24 | 2017-06-24 | Horiba Ltd | Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione. |
CN112071874A (zh) * | 2020-09-30 | 2020-12-11 | 湖南正芯微电子探测器有限公司 | 一种硅漂移探测器与金属氧化物半导体场效应晶体管集成器件 |
CN113391339B (zh) * | 2021-07-13 | 2024-01-12 | 陕西迪泰克新材料有限公司 | 一种辐射剂量监测装置及其监测方法和制备方法 |
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2014
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WO2019117272A1 (ja) * | 2017-12-15 | 2019-06-20 | 株式会社堀場製作所 | シリコンドリフト型放射線検出素子、シリコンドリフト型放射線検出器及び放射線検出装置 |
CN111373288A (zh) * | 2017-12-15 | 2020-07-03 | 株式会社堀场制作所 | 硅漂移型放射线检测元件、硅漂移型放射线检测器和放射线检测装置 |
JPWO2019117272A1 (ja) * | 2017-12-15 | 2020-12-17 | 株式会社堀場製作所 | シリコンドリフト型放射線検出素子、シリコンドリフト型放射線検出器及び放射線検出装置 |
JP2023036732A (ja) * | 2017-12-15 | 2023-03-14 | 株式会社堀場製作所 | シリコンドリフト型放射線検出素子、シリコンドリフト型放射線検出器及び放射線検出装置 |
KR20200006393A (ko) * | 2018-07-10 | 2020-01-20 | 한국과학기술원 | 방사선에 의한 반도체 손상 방지 방법 및 장치 |
KR102240971B1 (ko) | 2018-07-10 | 2021-04-16 | 한국과학기술원 | 방사선에 의한 반도체 손상 방지 방법 및 장치 |
JP7423423B2 (ja) | 2020-05-28 | 2024-01-29 | 株式会社日立製作所 | 半導体検出器およびその製造方法 |
WO2023026939A1 (ja) * | 2021-08-25 | 2023-03-02 | 株式会社堀場製作所 | 放射線検出素子、放射線検出器、放射線検出装置及び放射線検出素子の製造方法 |
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CN104215996A (zh) | 2014-12-17 |
JP6317181B2 (ja) | 2018-04-25 |
US9123837B2 (en) | 2015-09-01 |
EP2808705B1 (en) | 2018-05-09 |
EP2808705A1 (en) | 2014-12-03 |
US20140353786A1 (en) | 2014-12-04 |
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