JP2020520102A - X線センサ、x線検出器システム、およびx線撮像システム - Google Patents
X線センサ、x線検出器システム、およびx線撮像システム Download PDFInfo
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- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
Description
Claims (21)
- センサの第1の側に複数の検出器ダイオード(22)を含む活性検出器領域を有し、前記センサの第2の反対側に接合終端(23)が配置された、X線センサ(21)。
- 前記第1の側は、前記センサのアノード側に対応し、前記接合終端を有する前記第2の側は、前記センサのカソード側に対応する、請求項1に記載のX線センサ。
- 前記第1の側は、前記センサのカソード側に対応し、前記接合終端を有する前記第2の側は、前記センサのアノード側に対応する、請求項1に記載のX線センサ。
- 前記X線センサ(21)は、カソード領域を有し、前記接合終端(23)は、前記カソード領域と同じドープ型である前記カソード領域の近傍に第1終端構造を含む、請求項2に記載のX線センサ。
- 前記接合終端(23)は、前記センサ縁部の近傍に反対のドープ型の第2終端構造を含む、請求項4に記載のX線センサ。
- 前記カソード領域は、n+であり、前記カソード領域の近傍の前記第1終端構造は、n型であり、前記センサ縁部の近傍の前記反対のドープ型の前記第2終端構造は、p型である、請求項5に記載のX線センサ。
- 前記第1終端構造は、n型接合終端拡張(JTE)であり、前記第2終端構造は、p型接合終端拡張(JTE)および/またはフィールドプレート終端を備えた少なくとも1つのp型フローティングリングである、請求項6に記載のX線センサ。
- 前記センサ(21)の前記第1の側から前記センサ(21)の前記第2の反対側までの辺に沿って延在し前記活性検出器領域の外周の周りに延在する前記センサの領域(24)は、p型ドープされている、請求項6または7に記載のX線センサ。
- 前記X線センサ(21)は、アノード領域を有し、前記接合終端(23)は、前記アノード領域と同じドープ型である前記アノード領域の近傍に第1終端構造を含む、請求項3に記載のX線センサ。
- 前記接合終端(23)は、前記センサ縁部の近傍に反対のドープ型の第2終端構造を含む、請求項9に記載のX線センサ。
- 前記アノード領域は、p+であり、前記アノード領域の近傍の前記第1終端構造は、p型であり、前記センサ縁部の近傍の前記反対のドープ型の前記第2終端構造は、n型である、請求項10に記載のX線センサ。
- 前記第1終端構造は、p型接合終端拡張(JTE)であり、前記第2終端構造は、n型接合終端拡張(JTE)および/またはフィールドプレート終端を備えた少なくとも1つのn型フローティングリングである、請求項11に記載のX線センサ。
- 前記センサ(21)の前記第1の側から前記センサ(21)の前記第2の反対側までの辺に沿って延在し前記活性検出器領域の外周の周りに延在する前記センサの領域(24)は、n型ドープされている、請求項11または12に記載のX線センサ。
- 前記センサ(21)の前記第1の側から前記センサ(21)の前記第2の反対側までの辺に沿って延在し前記活性検出器領域の外周の周りに延在する前記センサの領域(24)は、前記センサの側縁部表面からのp−n接合絶縁を提供するようにドープされている、請求項1から9のいずれか一項に記載のX線センサ。
- 前記ドープ領域(24)には、ガード構造を提供するように前記センサ(21)の前記第1の側にガード電極が設けられている、請求項14に記載のX線センサ。
- 前記接合終端は、接合終端拡張(JTE)および/または1つ以上のフローティングフィールドリング(FFR)を含む、請求項1から15のいずれか一項に記載のX線センサ。
- 前記活性検出器領域は、検出器ダイオード(22)のアレイを含み、前記接合終端は、前記検出器ダイオードのアレイを終端するように構成されている、請求項1から16のいずれか一項に記載のX線センサ。
- 複数の検出器ダイオード(22)を含む活性検出器領域を有するX線センサ(21)であって、前記センサ(21)の側縁部に沿って延在し前記活性検出器領域の外周の周りに延在する前記センサの領域(24)は、前記センサの前記側縁部表面からのp−n接合を提供するようにドープされ、および/または、前記ドープ領域(24)には、ガード構造を提供するように前記センサ(21)の第1の側にガード電極が設けられている、X線センサ。
- X線センサ(21)であって、
前記センサの第1の側の複数の検出器ダイオード(22)を含む活性検出器領域と、
前記センサの第2の反対側の共通接合終端(23)と、
を備え、
前記第1の側は、前記センサのアノード側に対応し、前記接合終端を有する前記第2の側は前記センサのカソード側に対応し、または
前記第1の側は、前記センサのカソード側に対応し、前記接合終端を有する前記第2の側は前記センサのアノード側に対応する、
X線センサ。 - 請求項1から19のいずれか一項に記載のX線センサ(21)を備える、X線検出器システム(20)。
- 請求項20に記載のX線検出器システム(20)を備える、X線撮像システム(100)。
Applications Claiming Priority (3)
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US15/597,925 US10074685B1 (en) | 2017-05-17 | 2017-05-17 | X-ray sensor, x-ray detector system and x-ray imaging system |
US15/597,925 | 2017-05-17 | ||
PCT/SE2018/050320 WO2018212693A1 (en) | 2017-05-17 | 2018-03-26 | X-ray sensor with detector diodes and a junction termination structure |
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JP2020520102A true JP2020520102A (ja) | 2020-07-02 |
JP7370866B2 JP7370866B2 (ja) | 2023-10-30 |
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US (2) | US10074685B1 (ja) |
EP (1) | EP3625832A4 (ja) |
JP (1) | JP7370866B2 (ja) |
KR (1) | KR102493191B1 (ja) |
CN (1) | CN110637377B (ja) |
IL (1) | IL270591B (ja) |
WO (1) | WO2018212693A1 (ja) |
Cited By (2)
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---|---|---|---|---|
WO2022230498A1 (ja) * | 2021-04-28 | 2022-11-03 | 国立研究開発法人理化学研究所 | 受光素子およびx線撮像素子ならびに電子機器 |
WO2022230499A1 (ja) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子およびx線撮像素子ならびに電子機器 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019084701A1 (en) * | 2017-10-30 | 2019-05-09 | Shenzhen Xpectvision Technology Co., Ltd. | Image sensor based on charge carrier avalanche |
CN111587388B (zh) * | 2018-01-24 | 2024-06-14 | 深圳帧观德芯科技有限公司 | 制作辐射检测器的方法 |
US10813607B2 (en) * | 2018-06-27 | 2020-10-27 | Prismatic Sensors Ab | X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor |
EP3970194A4 (en) * | 2019-05-14 | 2022-12-21 | Prismatic Sensors AB | X-RAY SENSOR HAVING A FIELD LIMITING RING CONFIGURATION |
US12015036B2 (en) * | 2020-04-28 | 2024-06-18 | Lawrence Livermore National Security, Llc | High temporal resolution solid-state X-ray detection system |
GB2611542B (en) * | 2021-10-06 | 2023-11-15 | Advanced Risc Mach Ltd | Circuitry and method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232597A (ja) * | 1996-02-28 | 1997-09-05 | Hitachi Ltd | ダイオード及び電力変換装置 |
JP2008258348A (ja) * | 2007-04-04 | 2008-10-23 | Institute X-Ray Technologies Co Ltd | 放射線検出器 |
JP2016025236A (ja) * | 2014-07-22 | 2016-02-08 | 富士電機株式会社 | 半導体装置 |
US20160049463A1 (en) * | 2014-08-12 | 2016-02-18 | Infineon Technologies Ag | Semiconductor Device with a Shielding Structure |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909119A (en) * | 1974-02-06 | 1975-09-30 | Westinghouse Electric Corp | Guarded planar PN junction semiconductor device |
CH633907A5 (de) | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
JP3392496B2 (ja) * | 1994-02-23 | 2003-03-31 | 株式会社東芝 | 電力用半導体装置 |
US5798558A (en) | 1995-06-27 | 1998-08-25 | Mission Research Corporation | Monolithic x-ray image detector and method of manufacturing |
DE10106359C1 (de) * | 2001-02-12 | 2002-09-05 | Hanning Elektro Werke | Laterales Halbleiterbauelement in Dünnfilm-SOI-Technik |
US6844251B2 (en) * | 2001-03-23 | 2005-01-18 | Krishna Shenai | Method of forming a semiconductor device with a junction termination layer |
DE102005029263B4 (de) | 2005-06-23 | 2011-07-07 | Infineon Technologies Austria Ag | Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit |
US8093624B1 (en) | 2006-02-15 | 2012-01-10 | Massachusetts Institute Of Technology | High fill-factor avalanche photodiode |
US7843030B2 (en) * | 2007-03-22 | 2010-11-30 | Ranbir Singh | Method, apparatus, material, and system of using a high gain avalanche photodetector transistor |
EP2150991B1 (en) | 2007-04-24 | 2017-09-27 | Koninklijke Philips N.V. | Method of forming an avalanche photodiode integrated with cmos circuitry and silicon photomultiplier manufactured by said method |
US20110062450A1 (en) * | 2009-09-15 | 2011-03-17 | The University Of Warwick | Silicon carbide semiconductor device |
WO2013021727A1 (ja) * | 2011-08-05 | 2013-02-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2013229547A (ja) * | 2012-03-26 | 2013-11-07 | Toshiba Corp | 半導体装置および半導体モジュール |
JP6050891B2 (ja) * | 2012-05-17 | 2016-12-21 | ゼネラル・エレクトリック・カンパニイ | 接合終端拡張を有する半導体デバイス |
CN106206425A (zh) * | 2016-07-27 | 2016-12-07 | 西安理工大学 | 一种电荷调制终端及其制备方法和含该终端的SiC高压器件 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232597A (ja) * | 1996-02-28 | 1997-09-05 | Hitachi Ltd | ダイオード及び電力変換装置 |
JP2008258348A (ja) * | 2007-04-04 | 2008-10-23 | Institute X-Ray Technologies Co Ltd | 放射線検出器 |
JP2016025236A (ja) * | 2014-07-22 | 2016-02-08 | 富士電機株式会社 | 半導体装置 |
US20160049463A1 (en) * | 2014-08-12 | 2016-02-18 | Infineon Technologies Ag | Semiconductor Device with a Shielding Structure |
Cited By (2)
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WO2022230498A1 (ja) * | 2021-04-28 | 2022-11-03 | 国立研究開発法人理化学研究所 | 受光素子およびx線撮像素子ならびに電子機器 |
WO2022230499A1 (ja) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子およびx線撮像素子ならびに電子機器 |
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WO2018212693A1 (en) | 2018-11-22 |
KR20200008582A (ko) | 2020-01-28 |
JP7370866B2 (ja) | 2023-10-30 |
EP3625832A1 (en) | 2020-03-25 |
US20180337204A1 (en) | 2018-11-22 |
US10074685B1 (en) | 2018-09-11 |
EP3625832A4 (en) | 2021-06-02 |
CN110637377A (zh) | 2019-12-31 |
US10249668B2 (en) | 2019-04-02 |
CN110637377B (zh) | 2023-11-03 |
KR102493191B1 (ko) | 2023-01-30 |
IL270591B (en) | 2021-12-01 |
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