JP2014220356A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2014220356A
JP2014220356A JP2013098223A JP2013098223A JP2014220356A JP 2014220356 A JP2014220356 A JP 2014220356A JP 2013098223 A JP2013098223 A JP 2013098223A JP 2013098223 A JP2013098223 A JP 2013098223A JP 2014220356 A JP2014220356 A JP 2014220356A
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JP
Japan
Prior art keywords
insulating film
bit line
contact
main surface
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013098223A
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English (en)
Japanese (ja)
Inventor
典章 三笠
Noriaki Mikasa
典章 三笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PS4 Luxco SARL
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PS4 Luxco SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PS4 Luxco SARL filed Critical PS4 Luxco SARL
Priority to JP2013098223A priority Critical patent/JP2014220356A/ja
Priority to TW103116238A priority patent/TW201511234A/zh
Priority to PCT/JP2014/062219 priority patent/WO2014181789A1/ja
Publication of JP2014220356A publication Critical patent/JP2014220356A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2013098223A 2013-05-08 2013-05-08 半導体装置及びその製造方法 Withdrawn JP2014220356A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013098223A JP2014220356A (ja) 2013-05-08 2013-05-08 半導体装置及びその製造方法
TW103116238A TW201511234A (zh) 2013-05-08 2014-05-07 半導體裝置及其製造方法
PCT/JP2014/062219 WO2014181789A1 (ja) 2013-05-08 2014-05-07 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013098223A JP2014220356A (ja) 2013-05-08 2013-05-08 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JP2014220356A true JP2014220356A (ja) 2014-11-20

Family

ID=51867268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013098223A Withdrawn JP2014220356A (ja) 2013-05-08 2013-05-08 半導体装置及びその製造方法

Country Status (3)

Country Link
JP (1) JP2014220356A (zh)
TW (1) TW201511234A (zh)
WO (1) WO2014181789A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208587625U (zh) 2017-01-05 2019-03-08 生命科技股份有限公司 用于将管联接到管配件的压缩套环和联接组件
US11264390B2 (en) * 2020-04-16 2022-03-01 Nanya Technology Corporation Semiconductor memory device with air gaps between conductive features and method for preparing the same
TWI810036B (zh) * 2022-05-26 2023-07-21 南亞科技股份有限公司 具有可編程部件的半導體元件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260560B1 (ko) * 1998-03-18 2000-07-01 윤종용 실리콘-온 인슐레이터 구조를 이용한 반도체 메모리 장치 및 그제조 방법
JP3880954B2 (ja) * 2002-09-30 2007-02-14 株式会社東芝 半導体記憶装置
KR101006531B1 (ko) * 2009-05-11 2011-01-07 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
TW201511234A (zh) 2015-03-16
WO2014181789A1 (ja) 2014-11-13

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