JP2014197639A - 樹脂封止型パワーモジュール及び成形金型 - Google Patents
樹脂封止型パワーモジュール及び成形金型 Download PDFInfo
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- 238000000465 moulding Methods 0.000 title claims description 47
- 229920005989 resin Polymers 0.000 claims abstract description 65
- 239000011347 resin Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 description 18
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- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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Abstract
【解決手段】 ベース板1と、ベース板1に絶縁層2を介して戴置された半導体素子4と、半導体素子4に電気的に接続された端子5と、上面と下面と互いに対向する2つの側面を有しベース板1を前記下面に露出するように収容し端子5を前記上面に露出するように収容する樹脂筐体8とを備える樹脂封止型パワーモジュールであって、樹脂筐体8には前記側面のそれぞれから相互に対向して突出した複数の突起8aが設けられ、突起8aの下面は樹脂筐体8の下面と同一平面にあることを特徴とする。
【選択図】 図1
Description
図1は本発明の実施の形態に係る樹脂封止型パワーモジュールを模式的に示す平面図、側面図及び正面図であり、正面図については平面図のA−A断面についての断面図を示している。以下図1に基づき本実施の形態に係る樹脂封止型パワーモジュールの構成について説明する。
2 絶縁層
3 回路パターン
4 半導体素子
4a IGBT
4b ダイオード
5 筒状導通体
6 金属細線
7 樹脂製スリーブ
8 樹脂筐体
8a 突起
9 被封止物
10 搬送治具
11 成形金型
11a 下金型
11b 上金型
11c 凹部
11d エアベント
11e 樹脂溜り
11f エジェクターピン
11g 凸部
11h 延在部
Claims (8)
- ベース板と、前記ベース板に絶縁層を介して戴置された半導体素子と、前記半導体素子に電気的に接続された端子と、上面と下面と互いに対向する2つの側面を有し前記ベース板を前記下面に露出するように収容し前記端子を前記上面に露出するように収容する樹脂筐体と、を備える樹脂封止型パワーモジュールであって、
前記樹脂筐体には前記側面のそれぞれから相互に対向して突出した複数の突起が設けられ、
前記突起の下面は前記樹脂筐体の下面と同一平面にあることを特徴とする樹脂封止型パワーモジュール。 - 前記複数の突起は、平面視において前記樹脂筐体180°回転した時に互いに一致しないように配置されていることを特徴とする請求項1記載の樹脂封止型パワーモジュール。
- 上金型と下金型とから構成され、前記上金型の内壁と前記下金型の内壁とで画定されるキャビティを有し、前記下金型には前記キャビティと外部とを繋ぐエアベントが設けられ、前記下金型の内壁は底面と互いに対向する2つの内側面を有し、前記下金型は前記内側面のそれぞれにおいて相互に対向して掘り込まれた複数の凹部が設けられ、前記凹部の底面は前記下金型の底面と同一平面にあることを特徴とする成形金型。
- 前記エアベントは樹脂溜りを有していることを特徴とする請求項3記載の成形金型。
- 前記樹脂溜りにはエジェクターピンが設けられていることを特徴とする請求項4記載の成形金型。
- 前記エアベントは前記キャビティ側から外部に向かってその方向に垂直な断面積が小さくなっていく形状であることを特徴とする請求項3記載の成形金型。
- 前記上金型は前記下金型の前記凹部に対応する領域に延在する凸部を有していることを特徴とする請求項3記載の成形金型。
- 前記凹部は前記内側面から前記底面にかけて延在部を有していることを特徴とする請求項3記載の成形金型。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6315432A (ja) * | 1986-07-08 | 1988-01-22 | Fujitsu Ltd | 樹脂パツケ−ジ成形用金型 |
JPH0377334A (ja) * | 1989-08-21 | 1991-04-02 | Fujitsu Ltd | パッケージ成形用金型 |
JPH0722576A (ja) * | 1993-07-05 | 1995-01-24 | Mitsubishi Electric Corp | 半導体パワーモジュールおよび複合基板、並びに半導体パワーモジュールの製造方法 |
JPH1126488A (ja) * | 1997-07-04 | 1999-01-29 | Nec Corp | 半導体樹脂封止用金型 |
JP2009078519A (ja) * | 2007-09-27 | 2009-04-16 | Hitachi Ltd | 樹脂ケースの製造方法及び電子制御装置 |
JP2012527095A (ja) * | 2009-06-25 | 2012-11-01 | 富士電機株式会社 | 半導体装置 |
-
2013
- 2013-03-29 JP JP2013073208A patent/JP5991253B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6315432A (ja) * | 1986-07-08 | 1988-01-22 | Fujitsu Ltd | 樹脂パツケ−ジ成形用金型 |
JPH0377334A (ja) * | 1989-08-21 | 1991-04-02 | Fujitsu Ltd | パッケージ成形用金型 |
JPH0722576A (ja) * | 1993-07-05 | 1995-01-24 | Mitsubishi Electric Corp | 半導体パワーモジュールおよび複合基板、並びに半導体パワーモジュールの製造方法 |
JPH1126488A (ja) * | 1997-07-04 | 1999-01-29 | Nec Corp | 半導体樹脂封止用金型 |
JP2009078519A (ja) * | 2007-09-27 | 2009-04-16 | Hitachi Ltd | 樹脂ケースの製造方法及び電子制御装置 |
JP2012527095A (ja) * | 2009-06-25 | 2012-11-01 | 富士電機株式会社 | 半導体装置 |
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