CN212570975U - 塑封功率模块 - Google Patents

塑封功率模块 Download PDF

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CN212570975U
CN212570975U CN202021444901.7U CN202021444901U CN212570975U CN 212570975 U CN212570975 U CN 212570975U CN 202021444901 U CN202021444901 U CN 202021444901U CN 212570975 U CN212570975 U CN 212570975U
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metal tube
power module
substrate
epoxy resin
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梁小广
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Wuxi Lipus Semiconductor Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

本实用新型提供了一种塑封功率模块,包括:基板、电子元器件、金属管和环氧树脂层;所述电子元器件和所述金属管连接在所述基板上;所述基板、电子元器件和金属管塑封通过所述环氧树脂层塑封;所述金属管的为一端开口一端密封的结构,开口端连接在所述基板上,密封端位于所述环氧树脂层内部。通过本实用新型的结构、制造工艺可以增大端子之间的绝缘距离,和端子到外部散热片之间的绝缘距离,同时减小功率模块的体积。

Description

塑封功率模块
技术领域
本实用新型涉及半导体技术领域,具体地,涉及一种塑封功率模块。
背景技术
在电源,电力电子变换器应用中,功率半导体(IGBT,MOSFET,SiC,GaN等)器件因为被广泛采用,在功率较大的场合下一般使用模块的封装形式。现在被广泛使用的封装形式如图1所示,功率模块主要由金属底板,焊接层,DBC(双面覆铜陶瓷基板),AMB(箔钎焊的覆铜陶瓷基板),绝缘散热树脂薄膜或者其他绝缘散热材料,邦定线,电气连接用端子,环氧树脂等组成。功率半导体晶片通过焊接固定到绝缘散热材料上后,通过铝邦定线进行电气连接。再通过回流焊或者烧结等工艺将DBC者其他绝缘散热材料焊接到金属底板上,功率半导体晶片的发出的热通过DBC或者其他绝缘散热材料,焊接层传导到金属底板上,金属底板再通过风冷或者水冷散热出去,端子用于连接外部的电气电路。
图2为压注模塑封封装工艺的例子,被加热成液体状的环氧树脂通过高压灌入压注模具中,铜框架与其他器件一起成型为压注模塑封功率模块。环氧树脂固化后,对铜框架进行切切筋以及管脚成形变成电气连接用的端子。
使用铜框架来形成电气连接用端子的方法,端子只能分布于功率模块的两侧(或者四周),由于塑封模块的成型厚度有限制(一般小于10mm),在功率模块安装到散热片后,端子在模块两侧时造成其和外部散热片(铜或者铝)之间的绝缘距离难以扩大。
另外因为端子在模块的两侧(或者四周),增大了模块的体积,不利于应用系统的小型化。
实用新型内容
针对现有技术中的缺陷,本实用新型的目的是提供一种塑封功率模块。
根据本实用新型提供的一种塑封功率模块,包括:基板、电子元器件、金属管和环氧树脂层;
所述电子元器件和所述金属管连接在所述基板上;
所述基板、电子元器件和金属管塑封通过所述环氧树脂层塑封;
所述金属管的为一端开口一端密封的结构,开口端连接在所述基板上,密封端位于所述环氧树脂层内部;
所述密封端为盖板密封结构,所述盖板密封结构包括盖板,所述盖板通过粘接剂粘接在所述金属管的端部,从而构成所述密封端;或者,
所述密封端为盖帽密封结构,所述盖帽密封结构包括盖帽,所述盖帽与所述金属管的端部外壁过盈配合,从而构成所述密封端。
优选地,所述金属管焊接或烧结在所述基板上。
优选地,所述盖板的厚度在0.2mm到0.5mm。
优选地,所述环氧树脂层高于所述盖板外端0.1mm到0.5mm。
优选地,所述盖帽的顶部厚度在0.1mm到0.5mm。
优选地,所述盖板、所述粘接剂和所述盖帽的耐温温度高于环氧树脂的塑封工艺温度。
与现有技术相比,本实用新型具有如下的有益效果:
通过本实用新型的结构、制造工艺可以增大端子之间的绝缘距离,和端子到外部散热片之间的绝缘距离,同时减小功率模块的体积。
附图说明
通过阅读参照以下附图对非限制性实施例所作的详细描述,本实用新型的其它特征、目的和优点将会变得更明显:
图1为传统塑封功率模块的结构示意图;
图2为传统塑封功率模块的制造工艺图;
图3为本实用新型塑封功率模块的结构示意图;
图4为本实用新型塑封模具的结构示意图;
图5为本实用新型金属管实施例1的结构示意图;
图6为本实用新型金属管实施例2的结构示意图;
图7为本实用新型金属管实施例3的结构示意图;
图8为本实用新型金属管实施例4的结构示意图;
图9为本实用新型金属管实施例4的一种连接金属端子的结构示意图。
具体实施方式
下面结合具体实施例对本实用新型进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本实用新型,但不以任何形式限制本实用新型。应当指出的是,对本领域的普通技术人员来说,在不脱离本实用新型构思的前提下,还可以做出若干变化和改进。这些都属于本实用新型的保护范围。
如图3所示,本实用新型提供的一种塑封功率模块,包括:基板1、电子元器件2、金属管4、环氧树脂层6和金属端子5。邦定线3用于实现各部分之间的电路连接。基板1采用DBC基板(双面覆铜陶瓷基板),电子元器件2和金属管4连接在基板1上,基板1、电子元器件2和金属管4塑封通过环氧树脂层6塑封。环氧树脂层6的作用是防腐防潮保护内部电路,同时又对内部各部件进行高压隔离。金属管4一端连接在基板1上,另一端与环氧树脂层6的外部空间连通,金属端子5的一端穿过金属管4连接在基板1上,用于连接外部的电气电路。
设置金属管的目的是为了在环氧树脂固化后再将金属端子连接到基板上,如此的结构设计,增大了金属端子之间的绝缘距离,和金属端子到外部散热片之间的绝缘距离,同时减小功率模块的体积。
而在环氧树脂固化的工艺中,为了防止环氧树脂进入金属管内部有两种实现方案:1、设计专门的塑封模具;2、使用一端开口一端密封的金属管。
针对于第一种方案,如图4所示,本实用新型还提供的一种塑封模具,用于制造上述塑封功率模块,塑封模具包括上模7和下模8。上模7或下模8上设置有功率模块固定部,对应的,下模8或上模7上滑动连接有可动柱9,可动柱9的位置与金属管4的位置相对应,在合模状态下,可动柱9能够封闭金属管4的另一端。上模和下模之间设置有密封圈10,防止环氧树脂溢出。
采用这种塑封模具的工艺如下:
S1、将待塑封功率模块固定在上模或下模,金属管两端开口,金属管的另一端对应朝向下模或上模。
S2、合模,使可动柱封闭金属管的另一端。
S3、向塑封模具内注入液态环氧树脂。
S4、在液态环氧树脂完全固化前抽出可动柱(完全固化后可动柱将无法抽出)。
S5、将金属端子插入金属管,与基板形成电气连接。
针对于第二种方案,需要使用原始状态为一端开口一端密封的金属管,开口端通过焊接、烧结的方式连接在基板上,密封端位于所述环氧树脂层内部。密封端通过切割或研磨的方式去除密封端,使环氧树脂层的外壁齐平。金属端子可以是常规金属端子,可以是带有压接端的金属端子(Press Fit)。
可以通过如下多种不同的金属管4结构来制造和实现:
实施例1
如图5所示,金属管的原始状态为一体式的一端开口一端密封的结构,金属管可以是铜管、铝管等,密封端的厚度在0.1mm到0.5mm。开口端通过焊接、烧结的方式连接在基板上,通过压注模塑封(Transfer molding)或者压缩模塑封(Compression molding)将功率模块的各个器件包括金属管使用环氧树脂固封,环氧树脂需要略高于金属管外端0.1mm到0.5mm。再将环氧树脂表面进行研磨,直至将金属管的密封端去除,露出管孔。此时再将金属端子通过压力或者冲压的方式压入金属管内部,与基板形成电气连接。
实施例2
如图6所示,由于实施例1中一体式的金属管加工成本较高,本实施例使用两端开口的金属管5,使用一面带有粘结剂52的盖板51将金属管5的一端闭塞。盖板51的厚度在0.1mm到0.5mm,盖板51的材料可以为金属(如铜,铝等),工程塑料等。工程塑料和粘结剂的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。
实施例3
如图7所示,由于实施例1中一体式的金属管加工成本较高,使用两端开口的金属管5,使用一个盖帽53,盖帽53的顶部厚度在0.1mm到0.5mm,盖帽的内直径必须略小于铜管的外直径,达到过盈配合,保证盖帽安装到铜管一侧时连接紧密,在塑封过程中,溶解的树脂不会流入到铜管之中。盖帽的材料可以为金属(如铜,铝等),工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。
实施例4
如图8所示,由于实施例1中一体式的金属管加工成本较高,本实施例使用一个棒状的填充物54塞入金属管5的一端使其密封。为了保证需要的研磨厚度不会过大,填充物54的厚度在0.5mm到1mm。填充物的外直径必须略大于铜管的内直径,达到过盈配合,保证棒状填充物安装到铜管一侧时连接紧密,在塑封过程中,溶解的树脂不会流入到铜管之中。填充物的材料可以为金属(如铜,铝等),工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。
实施例1至4的塑封功率模块的塑封方法,包括步骤:
S1、将待塑封功率模块固定在塑封模具的上模或下模,金属管的密封端对应朝向下模或上模。
S2、合模后向塑封模具内注入液态环氧树脂。
S3、在液态环氧树脂固化后,通过切割或研磨去除密封端。
S4、将金属端子插入金属管,与基板形成电气连接。
实施例5
如图9所示,考虑到实施例4中需要研磨的厚度交大,加大了加工时间。本将长度为1mm到3mm的棒状填充物塞入金属管后,进行塑封,塑封后只研磨掉铜管上方的环氧树脂后,将金属端子(一般为导电性较好的铜)或者带有Pressfit功能的金属端子通过压力或者冲压的方式与棒状填充物一起压入金属管形成电气连接用端子。棒状填充物在金属端子下方。棒状填充物的材料可以为金属(如铜,铝等),工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。
在本申请的描述中,需要理解的是,术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。
以上对本实用新型的具体实施例进行了描述。需要理解的是,本实用新型并不局限于上述特定实施方式,本领域技术人员可以在权利要求的范围内做出各种变化或修改,这并不影响本实用新型的实质内容。在不冲突的情况下,本申请的实施例和实施例中的特征可以任意相互组合。

Claims (6)

1.一种塑封功率模块,其特征在于,包括:基板、电子元器件、金属管和环氧树脂层;
所述电子元器件和所述金属管连接在所述基板上;
所述基板、电子元器件和金属管塑封通过所述环氧树脂层塑封;
所述金属管为一端开口一端密封的结构,开口端连接在所述基板上,密封端位于所述环氧树脂层内部;
所述密封端为盖板密封结构,所述盖板密封结构包括盖板,所述盖板通过粘接剂粘接在所述金属管的端部,从而构成所述密封端;或者,
所述密封端为盖帽密封结构,所述盖帽密封结构包括盖帽,所述盖帽与所述金属管的端部外壁过盈配合,从而构成所述密封端。
2.根据权利要求1所述的塑封功率模块,其特征在于,所述金属管焊接或烧结在所述基板上。
3.根据权利要求1所述的塑封功率模块,其特征在于,所述盖板的厚度在0.1mm到0.5mm。
4.根据权利要求1所述的塑封功率模块,其特征在于,所述环氧树脂层高于所述盖板外端0.1mm到0.5mm。
5.根据权利要求1所述的塑封功率模块,其特征在于,所述盖帽的顶部厚度在0.1mm到0.5mm。
6.根据权利要求1所述的塑封功率模块,其特征在于,所述盖板、所述粘接剂和所述盖帽的耐温温度高于环氧树脂的塑封工艺温度。
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