JP2014170922A5 - - Google Patents
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- Publication number
- JP2014170922A5 JP2014170922A5 JP2013273208A JP2013273208A JP2014170922A5 JP 2014170922 A5 JP2014170922 A5 JP 2014170922A5 JP 2013273208 A JP2013273208 A JP 2013273208A JP 2013273208 A JP2013273208 A JP 2013273208A JP 2014170922 A5 JP2014170922 A5 JP 2014170922A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- photoresist pattern
- composition
- ion
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261748058P | 2012-12-31 | 2012-12-31 | |
| US61/748,058 | 2012-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014170922A JP2014170922A (ja) | 2014-09-18 |
| JP2014170922A5 true JP2014170922A5 (cg-RX-API-DMAC7.html) | 2018-07-05 |
| JP6448903B2 JP6448903B2 (ja) | 2019-01-09 |
Family
ID=51017642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013273208A Active JP6448903B2 (ja) | 2012-12-31 | 2013-12-27 | イオン注入法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9666436B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6448903B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102117296B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN103943472B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI556290B (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジストパターントリミング方法 |
| JP2014143415A (ja) | 2012-12-31 | 2014-08-07 | Rohm & Haas Electronic Materials Llc | イオン注入法 |
| US9263551B2 (en) * | 2013-10-11 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Simultaneous formation of source/drain openings with different profiles |
| TWI605062B (zh) | 2013-12-30 | 2017-11-11 | 羅門哈斯電子材料有限公司 | 光阻圖案修整組成物及方法 |
| WO2017102378A1 (en) | 2015-12-14 | 2017-06-22 | Asml Netherlands B.V. | A membrane assembly |
| WO2017102379A1 (en) | 2015-12-14 | 2017-06-22 | Asml Netherlands B.V. | A membrane for euv lithography |
| US10056256B2 (en) * | 2016-03-16 | 2018-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of priming photoresist before application of a shrink material in a lithography process |
| US10658180B1 (en) * | 2018-11-01 | 2020-05-19 | International Business Machines Corporation | EUV pattern transfer with ion implantation and reduced impact of resist residue |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163702A (en) * | 1978-03-29 | 1979-08-07 | General Electric Company | Process for rendering surfaces permanently water wettable and novel product thus-produced |
| US5272026A (en) * | 1987-12-18 | 1993-12-21 | Ucb S.A. | Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article |
| US6180320B1 (en) | 1998-03-09 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
| JP2000035672A (ja) * | 1998-03-09 | 2000-02-02 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| JP4210237B2 (ja) * | 1998-05-25 | 2009-01-14 | ダイセル化学工業株式会社 | フォトレジスト用化合物およびフォトレジスト用樹脂組成物 |
| JP4329216B2 (ja) | 2000-03-31 | 2009-09-09 | Ｊｓｒ株式会社 | レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法 |
| JP2002050571A (ja) * | 2000-05-02 | 2002-02-15 | Shipley Co Llc | 適合化処理 |
| US6492075B1 (en) | 2000-06-16 | 2002-12-10 | Advanced Micro Devices, Inc. | Chemical trim process |
| US6274289B1 (en) | 2000-06-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Chemical resist thickness reduction process |
| JP2002006512A (ja) | 2000-06-20 | 2002-01-09 | Mitsubishi Electric Corp | 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法 |
| US6683202B2 (en) * | 2001-02-22 | 2004-01-27 | Tokyo Ohka, Kogyo Co., Ltd. | Fluorine-containing monomeric ester compound for base resin in photoresist composition |
| JP2002299202A (ja) | 2001-03-29 | 2002-10-11 | Sony Corp | 半導体装置の製造方法 |
| JP3476080B2 (ja) | 2001-11-05 | 2003-12-10 | 東京応化工業株式会社 | 微細パターンの形成方法 |
| JP3953822B2 (ja) | 2002-01-25 | 2007-08-08 | 富士通株式会社 | レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
| JP4324433B2 (ja) * | 2003-09-17 | 2009-09-02 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| KR100685598B1 (ko) | 2005-12-30 | 2007-02-22 | 주식회사 하이닉스반도체 | 이온주입용 마스크 패턴 형성 방법 |
| EP1845416A3 (en) * | 2006-04-11 | 2009-05-20 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for photolithography |
| KR20100030616A (ko) * | 2007-06-15 | 2010-03-18 | 후지필름 가부시키가이샤 | 패턴 형성용 표면 처리제, 및 상기 처리제를 이용한 패턴 형성 방법 |
| JP2009071049A (ja) | 2007-09-13 | 2009-04-02 | Sanyo Electric Co Ltd | 半導体基板への不純物注入方法 |
| TWI364798B (en) * | 2008-03-21 | 2012-05-21 | Vanguard Int Semiconduct Corp | Semiconductor device and fabrication method thereof |
| US7862982B2 (en) * | 2008-06-12 | 2011-01-04 | International Business Machines Corporation | Chemical trim of photoresist lines by means of a tuned overcoat material |
| JP2010085921A (ja) * | 2008-10-02 | 2010-04-15 | Panasonic Corp | レジスト材料及びそれを用いたパターン形成方法 |
| JP4779028B2 (ja) | 2009-02-27 | 2011-09-21 | パナソニック株式会社 | パターン形成方法 |
| US8883407B2 (en) * | 2009-06-12 | 2014-11-11 | Rohm And Haas Electronic Materials Llc | Coating compositions suitable for use with an overcoated photoresist |
| US8252673B2 (en) * | 2009-12-21 | 2012-08-28 | International Business Machines Corporation | Spin-on formulation and method for stripping an ion implanted photoresist |
| JP2011222834A (ja) * | 2010-04-12 | 2011-11-04 | Hoya Corp | ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法 |
| KR101675458B1 (ko) | 2010-07-27 | 2016-11-14 | 삼성전자 주식회사 | 산 확산을 이용하는 반도체 소자의 제조 방법 |
| JP5445430B2 (ja) * | 2010-11-15 | 2014-03-19 | 信越化学工業株式会社 | パターン形成方法 |
| TWI510854B (zh) * | 2011-12-31 | 2015-12-01 | 羅門哈斯電子材料有限公司 | 光阻劑圖案修整方法 |
| JP2014143415A (ja) * | 2012-12-31 | 2014-08-07 | Rohm & Haas Electronic Materials Llc | イオン注入法 |
| JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジストパターントリミング方法 |
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2013
- 2013-12-27 JP JP2013273208A patent/JP6448903B2/ja active Active
- 2013-12-31 CN CN201310757503.9A patent/CN103943472B/zh active Active
- 2013-12-31 TW TW102149240A patent/TWI556290B/zh not_active IP Right Cessation
- 2013-12-31 US US14/145,726 patent/US9666436B2/en active Active
- 2013-12-31 KR KR1020130168089A patent/KR102117296B1/ko active Active