JP2014150256A5 - - Google Patents

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Publication number
JP2014150256A5
JP2014150256A5 JP2014015330A JP2014015330A JP2014150256A5 JP 2014150256 A5 JP2014150256 A5 JP 2014150256A5 JP 2014015330 A JP2014015330 A JP 2014015330A JP 2014015330 A JP2014015330 A JP 2014015330A JP 2014150256 A5 JP2014150256 A5 JP 2014150256A5
Authority
JP
Japan
Prior art keywords
light emitting
layer
electrode layer
emitting device
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014015330A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014150256A (ja
JP6396023B2 (ja
Filing date
Publication date
Priority claimed from KR1020130010618A external-priority patent/KR101988405B1/ko
Application filed filed Critical
Publication of JP2014150256A publication Critical patent/JP2014150256A/ja
Publication of JP2014150256A5 publication Critical patent/JP2014150256A5/ja
Application granted granted Critical
Publication of JP6396023B2 publication Critical patent/JP6396023B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014015330A 2013-01-30 2014-01-30 発光素子 Active JP6396023B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0010618 2013-01-30
KR1020130010618A KR101988405B1 (ko) 2013-01-30 2013-01-30 발광소자

Publications (3)

Publication Number Publication Date
JP2014150256A JP2014150256A (ja) 2014-08-21
JP2014150256A5 true JP2014150256A5 (enExample) 2017-01-12
JP6396023B2 JP6396023B2 (ja) 2018-09-26

Family

ID=50000911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014015330A Active JP6396023B2 (ja) 2013-01-30 2014-01-30 発光素子

Country Status (5)

Country Link
US (1) US9117975B2 (enExample)
EP (1) EP2763193B1 (enExample)
JP (1) JP6396023B2 (enExample)
KR (1) KR101988405B1 (enExample)
CN (1) CN103972349B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6245380B2 (ja) * 2014-11-07 2017-12-13 信越半導体株式会社 発光素子及び発光素子の製造方法
KR20160141301A (ko) 2015-05-29 2016-12-08 삼성전자주식회사 반도체 발광 소자 패키지
CN106299074B (zh) * 2015-06-23 2020-09-04 晶元光电股份有限公司 半导体发光元件
KR102343099B1 (ko) * 2017-06-07 2021-12-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
JP7138517B2 (ja) * 2017-10-18 2022-09-16 ローム株式会社 半導体発光装置
CN110828502B (zh) * 2018-08-09 2024-04-02 首尔伟傲世有限公司 发光元件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327578A (ja) * 1989-06-23 1991-02-05 Eastman Kodatsuku Japan Kk 発光ダイオ―ドアレイ
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6716654B2 (en) * 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
JP2009123754A (ja) * 2007-11-12 2009-06-04 Hitachi Cable Ltd 発光装置及び発光装置の製造方法
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
JP2010114337A (ja) * 2008-11-10 2010-05-20 Hitachi Cable Ltd 発光素子
KR100974776B1 (ko) * 2009-02-10 2010-08-06 엘지이노텍 주식회사 발광 소자
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
KR101020963B1 (ko) * 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101034144B1 (ko) * 2010-04-28 2011-05-13 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
TWI553903B (zh) * 2010-12-20 2016-10-11 Ｌｇ伊諾特股份有限公司 發光元件及其製造方法
JP2012222082A (ja) * 2011-04-06 2012-11-12 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法

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