JP2014138025A - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 101
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 58
- 230000015556 catabolic process Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 description 120
- 230000005684 electric field Effects 0.000 description 32
- 239000013078 crystal Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 18
- 239000002131 composite material Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】炭化珪素膜90は第1および第2の主面P1、P2を有する。第2の主面P2は素子形成面PEと終端面PTとを有する。炭化珪素膜90は、第1の主面P1と第1の主面P1と反対の中間面PMとをなす第1の範囲RAと、中間面PM上に設けられ素子形成面PEをなす第2の範囲RBとを有する。第1の範囲RAは、第1の耐圧保持層81Aと、終端部TM内において中間面PMに部分的に設けられたガードリング領域73とを含む。第2の範囲RBは第2の耐圧保持層81Bを有する。第2の範囲RBは、終端部CL内において第2の耐圧保持層81Bのみを有する構造、および、素子部CLおよび終端部TMのうち素子部CLにのみ配置される構造のいずれかを有する。
【選択図】図2
Description
図1に示すように、MOSFET201(炭化珪素半導体装置)は、トランジスタ素子(半導体素子)が設けられている素子部CLと、素子部CLを取り囲んでいる終端部TMとを有するものである。図2に示すように、MOSFET201は、単結晶基板80と、エピタキシャル膜90(炭化珪素膜)と、ゲート酸化膜91(ゲート絶縁膜)と、ゲート電極92と、ドレイン電極98(第1の主電極)と、ソース電極94(第2の主電極)と、層間絶縁膜93と、ソース配線層95とを有する。
図4および図5に示すように、単結晶基板80上に下側範囲RAが形成される。具体的には、以下のとおりである。
図14に示すように、本実施の形態のMOSFET202(炭化珪素半導体装置)においては、終端面PTが、素子形成面PEを含む仮想平面PVから、下面P1の方へずらされて配置されている。終端面PTと素子形成面PEとは、終端部TMに位置する側面PSによってつながっている。側面PSは、本実施の形態においては、素子形成面PEに対して90度未満の角度で傾いている。側面PSは、後述する特殊面であってもよい。上側範囲RBはガードリング領域73を覆っている。終端面PTおよび中間面PMの間における上側範囲RBの厚さは1μm以下であることが好ましい。
図16に示すように、本実施の形態のMOSFET203(炭化珪素半導体装置)においてはガードリング領域73が終端面PTに位置している。なお、上記以外の構成については、上述した実施の形態2の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
図17に示すように、本実施の形態のMOSFET204(炭化珪素半導体装置)においては、上側範囲RBは、素子部CLおよび終端部TMのうち素子部CLにのみ配置される構造を有する。言い換えれば、上側範囲RBは終端部TMの外側にのみ設けられている。これにより、上側範囲RBが素子形成面PEをなし、また下側範囲RAが終端面PTをなしている。
図18に示すように、MOSFET201(図2)の変形例である本実施の形態のMOSFET205は、トレンチ型ではなくプレーナ型である。すなわちエピタキシャル膜90の素子形成面PE上には、トレンチTR(図2)が設けられておらず、プレーナゲート構造が設けられている。具体的には、平坦な上面P2における素子形成面PE上に、ベース層82Pと、ソース領域83Pと、コンタクト領域84Pとの不純物領域が形成されている。また平坦なP2上にゲート酸化膜91Pが設けられ、その上にゲート電極92Pが設けられている。なお、上記以外の構成については、上述した実施の形態1の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。
上述した「特殊面」について詳しく説明する。上述したように、トレンチTRの側壁面SW(図2)は、特にベース層82上において特殊面を有することが好ましい。以下、側壁面SWが特殊面を有する場合について説明する。
ましくは、チャネル面上においてキャリアが流れる方向であるチャネル方向CDは、上述した周期的繰り返しが行われる方向に沿っている。
一般に、ポリタイプ4Hの炭化珪素単結晶を(000−1)面から見ると、図20に示すように、Si原子(またはC原子)は、A層の原子(図中の実線)と、この下に位置するB層の原子(図中の破線)と、この下に位置するC層の原子(図中の一点鎖線)と、この下に位置するB層の原子(図示せず)とが繰り返し設けられている。つまり4つの層ABCBを1周期としてABCBABCBABCB・・・のような周期的な積層構造が設けられている。
トレンチTRの側壁面SW(図2)が面S1(図19)を含む場合、面方位{0−33−8}を有する面にチャネルが形成される。これにより、オン抵抗のうちチャネル抵抗が占める部分が抑制される。よってオン抵抗を所定の値以下に維持しつつ、ドリフト領域81による抵抗を大きくし得る。よってドリフト領域81の不純物濃度をより低くすることができる。よってMOSFET201の耐圧をより高めることができる。トレンチTRの側壁面SWが面S1および面S2を微視的に含む場合は、オン抵抗をより抑制し得る。よって耐圧をより高めることができる。側壁面SWの面S1およびS2が複合面SRを構成している場合、オン抵抗をより抑制し得る。よって耐圧をより高めることができる。
上記実施の形態におけるn型(第1の導電型)とp型(第2の導電型)とが入れ替えられた構成も用いられ得る。また電荷補償領域およびJTE領域の一方または両方が省略された構成も用いられ得る。また炭化珪素半導体装置は、MOSFET以外のMISFET(Metal Insulator Semiconductor Field Effect Transistor)であってもよく、またMISFET以外のトランジスタであってもよく、たとえばIGBT(Insulated Gate Bipolar Transistor)であってもよい。また炭化珪素半導体装置はトランジスタでなくてもよく、たとえばショットキーバリアダイオードであってもよい。
Claims (8)
- 半導体素子が設けられている素子部と、前記素子部を取り囲んでいる終端部とを有する炭化珪素半導体装置であって、
第1の主面および前記第1の主面と反対の第2の主面を有する炭化珪素膜を備え、前記第2の主面は前記素子部内の素子形成面と前記終端部内の終端面とを有し、前記炭化珪素膜は、前記第1の主面と前記第1の主面と反対の中間面とをなす第1の範囲と、前記中間面上に設けられ前記素子形成面をなす第2の範囲とを有し、前記第1の範囲は、第1の導電型を有する第1の耐圧保持層と、前記終端部内において前記中間面に部分的に設けられ前記中間面上において前記素子部を取り囲み第2の導電型を有するガードリング領域とを含み、前記第2の範囲は、前記第1の導電型を有する第2の耐圧保持層を有し、前記第2の範囲は、前記終端部内において前記第2の耐圧保持層のみを有する構造、および、前記素子部および前記終端部のうち前記素子部にのみ配置される構造のいずれかを有し、前記炭化珪素半導体装置はさらに
前記第1の主面に面する第1の主電極と、
前記第2の主面の前記素子形成面に面する第2の主電極とを備える、炭化珪素半導体装置。 - 前記第1の範囲は、前記素子部内において前記中間面に部分的に設けられ、前記第2の導電型を有し前記ガードリング領域の不純物濃度に比して低い不純物濃度を有する電荷補償領域を含む、請求項1に記載の炭化珪素半導体装置。
- 前記素子形成面と前記終端面との各々は一の平面上に配置されている、請求項1または2に記載の炭化珪素半導体装置。
- 前記終端面は、前記素子形成面を含む仮想平面から前記第1の主面の方へずらされて配置されている、請求項1または2に記載の炭化珪素半導体装置。
- 前記第2の範囲は前記ガードリング領域を覆っている、請求項4に記載の炭化珪素半導体装置。
- 前記ガードリング領域は前記終端面に位置している、請求項4に記載の炭化珪素半導体装置。
- 半導体素子が設けられている素子部と前記素子部を取り囲んでいる終端部とを有する炭化珪素半導体装置の製造方法であって、前記炭化珪素半導体装置は第1の主面および前記第1の主面と反対の第2の主面を有する炭化珪素膜を含み、前記第2の主面は前記素子部内の素子形成面と前記終端部内の終端面とを有するものであり、前記炭化珪素半導体装置の製造方法は、
前記第1の主面と前記第1の主面と反対の中間面とをなす第1の範囲を形成する工程を備え、前記第1の範囲を形成する工程は、前記第1の主面および前記中間面をなし第1の導電型を有する第1の耐圧保持層を形成する工程と、前記終端部内において前記中間面に部分的に、前記中間面上において前記素子部を取り囲み第2の導電型を有するガードリング領域を形成する工程とを含み、前記炭化珪素半導体装置の製造方法はさらに
前記中間面上に、前記素子形成面をなす第2の範囲を形成する工程を備え、前記第2の範囲を形成する工程は、前記ガードリング領域を形成する工程の後に、前記中間面上に、前記第1の導電型を有する第2の耐圧保持層を形成する工程を含み、前記第2の範囲を形成する工程は、前記第2の範囲が、前記終端部内において前記第2の耐圧保持層のみを有する構造、および、前記素子部および前記終端部のうち前記素子部にのみ配置される構造のいずれかを有するように行われ、前記炭化珪素半導体装置の製造方法はさらに
前記第1の主面に面する第1の主電極を形成する工程と、
前記第2の主面の前記素子形成面に面する第2の主電極を形成する工程とを備える、炭化珪素半導体装置の製造方法。 - 前記第2の範囲を形成する工程は、前記終端部内において前記第2の耐圧保持層の少なくとも一部を除去することによって、前記素子形成面を含む仮想平面から前記第1の主面の方へずらされた前記終端面を形成する工程を含む、請求項7に記載の炭化珪素半導体装置の製造方法。
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