JP2014099606A5 - - Google Patents
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- Publication number
- JP2014099606A5 JP2014099606A5 JP2013232641A JP2013232641A JP2014099606A5 JP 2014099606 A5 JP2014099606 A5 JP 2014099606A5 JP 2013232641 A JP2013232641 A JP 2013232641A JP 2013232641 A JP2013232641 A JP 2013232641A JP 2014099606 A5 JP2014099606 A5 JP 2014099606A5
- Authority
- JP
- Japan
- Prior art keywords
- surface mount
- mount package
- double
- ceramic substrate
- packaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 239000000919 ceramic Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 19
- 239000010410 layer Substances 0.000 claims 18
- 238000004806 packaging method and process Methods 0.000 claims 16
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 239000012790 adhesive layer Substances 0.000 claims 3
- 238000001465 metallisation Methods 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/675,084 | 2012-11-13 | ||
| US13/675,084 US9337163B2 (en) | 2012-11-13 | 2012-11-13 | Low profile surface mount package with isolated tab |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014099606A JP2014099606A (ja) | 2014-05-29 |
| JP2014099606A5 true JP2014099606A5 (enExample) | 2016-12-22 |
| JP6310677B2 JP6310677B2 (ja) | 2018-04-11 |
Family
ID=49515295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013232641A Active JP6310677B2 (ja) | 2012-11-13 | 2013-11-11 | 分離タブを備える低プロファイル表面実装パッケージ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9337163B2 (enExample) |
| EP (1) | EP2731128B1 (enExample) |
| JP (1) | JP6310677B2 (enExample) |
| CN (1) | CN103811433B (enExample) |
| TW (1) | TWI621240B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9716052B2 (en) * | 2013-08-28 | 2017-07-25 | Mitsubishi Electric Corporation | Semiconductor device comprising a conductive film joining a diode and switching element |
| US9674940B2 (en) | 2014-08-14 | 2017-06-06 | Samsung Electronics Co., Ltd. | Electronic device and semiconductor package with thermally conductive via |
| US9613843B2 (en) | 2014-10-13 | 2017-04-04 | General Electric Company | Power overlay structure having wirebonds and method of manufacturing same |
| US9583482B2 (en) | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
| US9893646B2 (en) | 2015-09-30 | 2018-02-13 | General Electric Company | System for a low profile, low inductance power switching module |
| DE102016219174A1 (de) * | 2015-10-07 | 2017-04-13 | Ceramtec Gmbh | Zweiseitig gekühlter Schaltkreis |
| KR102382635B1 (ko) | 2016-06-09 | 2022-04-05 | 매그나칩 반도체 유한회사 | 전력 반도체의 웨이퍼 레벨 칩 스케일 패키지 및 제조 방법 |
| KR101905995B1 (ko) | 2016-11-09 | 2018-10-10 | 현대자동차주식회사 | 양면냉각형 파워모듈 |
| US10541209B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof |
| US10804115B2 (en) | 2017-08-03 | 2020-10-13 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
| US10541153B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
| EP3534394A1 (en) | 2018-02-28 | 2019-09-04 | Infineon Technologies Austria AG | Semiconductor package and method of manufacturing a semiconductor package |
| US11538769B2 (en) | 2018-12-14 | 2022-12-27 | General Electric Company | High voltage semiconductor devices having improved electric field suppression |
| US10892237B2 (en) | 2018-12-14 | 2021-01-12 | General Electric Company | Methods of fabricating high voltage semiconductor devices having improved electric field suppression |
| US11177804B2 (en) * | 2018-12-20 | 2021-11-16 | Sanko Tekstil Isletmeleri San. Ve Tic. A.S. | Wearable touch sensitive garment |
| US11342268B2 (en) * | 2020-01-29 | 2022-05-24 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
| US11398445B2 (en) | 2020-05-29 | 2022-07-26 | General Electric Company | Mechanical punched via formation in electronics package and electronics package formed thereby |
| US11817750B2 (en) * | 2021-01-14 | 2023-11-14 | GM Global Technology Operations LLC | Planar power module with high power density packaging |
| US11950394B2 (en) | 2021-10-12 | 2024-04-02 | Ge Aviation Systems Llc | Liquid-cooled assembly and method |
| US12224222B2 (en) * | 2022-01-11 | 2025-02-11 | Infineon Technologies Ag | Semiconductor package having a thermally and electrically conductive spacer |
| CN114400210B (zh) * | 2022-01-13 | 2024-03-05 | 西安交通大学 | 一种双面散热芯片倒装的气密性耐高温封装结构 |
| US12322916B2 (en) * | 2022-06-22 | 2025-06-03 | Ge Aviation Systems Llc | Electronic connection assembly |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5637922A (en) | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
| US5959357A (en) * | 1998-02-17 | 1999-09-28 | General Electric Company | Fet array for operation at different power levels |
| US6306680B1 (en) | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
| US6994897B2 (en) | 2002-11-15 | 2006-02-07 | General Electric Company | Method of processing high-resolution flex circuits with low distortion |
| JP4268560B2 (ja) * | 2004-04-27 | 2009-05-27 | 大日本印刷株式会社 | 電子部品内蔵モジュールおよびその製造方法 |
| US7262444B2 (en) | 2005-08-17 | 2007-08-28 | General Electric Company | Power semiconductor packaging method and structure |
| JP4550732B2 (ja) * | 2005-12-20 | 2010-09-22 | 株式会社椿本チエイン | 固体潤滑無給油チェーン |
| US8049338B2 (en) * | 2006-04-07 | 2011-11-01 | General Electric Company | Power semiconductor module and fabrication method |
| DE102006021959B4 (de) * | 2006-05-10 | 2011-12-29 | Infineon Technologies Ag | Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung |
| US8138587B2 (en) * | 2008-09-30 | 2012-03-20 | Infineon Technologies Ag | Device including two mounting surfaces |
| US8358000B2 (en) * | 2009-03-13 | 2013-01-22 | General Electric Company | Double side cooled power module with power overlay |
| CN102460693A (zh) * | 2009-06-19 | 2012-05-16 | 株式会社安川电机 | 电力变换装置 |
| CN102484109B (zh) * | 2009-08-03 | 2014-12-10 | 株式会社安川电机 | 电力变换装置 |
| US20110209908A1 (en) * | 2009-08-06 | 2011-09-01 | Advanced Chip Engineering Technology Inc. | Conductor package structure and method of the same |
| US8120158B2 (en) * | 2009-11-10 | 2012-02-21 | Infineon Technologies Ag | Laminate electronic device |
| US8531027B2 (en) * | 2010-04-30 | 2013-09-10 | General Electric Company | Press-pack module with power overlay interconnection |
| CN202042481U (zh) * | 2011-03-24 | 2011-11-16 | 比亚迪股份有限公司 | 一种功率模块 |
| WO2012132709A1 (ja) * | 2011-03-29 | 2012-10-04 | ローム株式会社 | パワーモジュール半導体装置 |
| JPWO2012133098A1 (ja) * | 2011-03-31 | 2014-07-28 | 日本ゼオン株式会社 | 半導体装置及びその製造方法 |
| CN102740604A (zh) * | 2012-07-12 | 2012-10-17 | 苏州衡业新材料科技有限公司 | 制备电子电路绝缘金属基板的方法 |
-
2012
- 2012-11-13 US US13/675,084 patent/US9337163B2/en active Active
-
2013
- 2013-10-30 TW TW102139414A patent/TWI621240B/zh active
- 2013-11-05 EP EP13191628.0A patent/EP2731128B1/en active Active
- 2013-11-11 JP JP2013232641A patent/JP6310677B2/ja active Active
- 2013-11-13 CN CN201310572275.8A patent/CN103811433B/zh active Active
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