JP2014086729A - 発光素子および発光素子パッケージ - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 169
- 238000002347 injection Methods 0.000 claims abstract description 71
- 239000007924 injection Substances 0.000 claims abstract description 71
- 230000000903 blocking effect Effects 0.000 claims abstract description 64
- 239000002019 doping agent Substances 0.000 claims abstract description 59
- 125000006850 spacer group Chemical group 0.000 claims description 35
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 368
- 239000011777 magnesium Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 229910052749 magnesium Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- -1 InGaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【解決手段】本発明の発光素子は、第1導電型ドーパントを含む第1半導体層と、前記第1半導体層上に配置された活性層と、前記活性層上に配置された電子遮断層と、前記活性層と電子遮断層との間に配置されたキャリア注入層と、前記電子遮断層上に配置され、第2導電型ドーパントを含む半導体層と、を含む。前記キャリア注入層は、第1導電型ドーパントと第2導電型ドーパントを含み、前記キャリア注入層の第1導電型ドーパントは少なくとも第2導電型ドーパントの濃度より低いドーパント濃度を有する。
【選択図】図1
Description
Claims (19)
- 第1導電型ドーパントを含む第1半導体層と、
前記第1半導体層上に配置された活性層と、
前記活性層上に配置された電子遮断層と、
前記活性層と前記電子遮断層との間に配置されたキャリア注入層と、
前記電子遮断層上に配置され、第2導電型ドーパントを含む第2半導体層と、を含み、
前記キャリア注入層は、前記第1導電型ドーパントと前記第2導電型ドーパントを含み、
前記キャリア注入層の前記第1導電型ドーパントは、少なくとも前記第2導電型ドーパントの濃度より低いドーパント濃度を有する発光素子。 - 前記第1導電型ドーパントはn型ドーパントを含み、前記第2導電型ドーパントはp型ドーパントを含む請求項1に記載の発光素子。
- 前記活性層と前記キャリア注入層との間に配置されるスペーサー層をさらに含む請求項1または2に記載の発光素子。
- 前記スペーサー層は、InGaN、AlGaNおよびInAlGaN中の一つを含む請求項3に記載の発光素子。
- 前記スペーサー層は、InGaNまたはInAlGaNで形成され、インジウム(In)の含有量は0.01%〜5%である請求項3または4に記載の発光素子。
- 前記スペーサーは、AlGaNまたはInAlGaNで形成され、アルミニウム(Al)の含有量は0.01%〜10%である請求項3または4に記載の発光素子。
- 前記電子遮断層は、前記キャリア注入層上に配置された第1電子遮断層と、前記第1電子遮断層上に配置され、前記第1電子遮断層のバンドギャップより大きいバンドギャップを有する第2電子遮断層とを含む請求項3乃至6のうち、いずれか1項に記載の発光素子。
- 前記第1電子遮断層はInAlGaNを含み、前記第2電子遮断層はAlGaNを含む請求項7に記載の発光素子。
- 前記キャリア注入層のp型ドーパントの濃度は1E19〜5E20である請求項3乃至8のうち、いずれか1項に記載の発光素子。
- 前記スペーサー層は、前記活性層の障壁層と連結され、前記障壁層のバンドギャップより広いバンドギャップを有する請求項3乃至9のうち、いずれか1項に記載の発光素子。
- 前記キャリア注入層は、前記スペーサー層のバンドギャップより低いバンドギャップを有する請求項3乃至10のうち、いずれか1項に記載の発光素子。
- 前記キャリア注入層は、前記活性層の障壁層と同一バンドギャップを有する請求項11に記載の発光素子。
- 前記キャリア注入層は、
前記p型ドーパントを含む第3半導体層と、
前記第3半導体層上に配置され、アンドープ(undoped)された第4半導体層と、
前記第4半導体層上に配置され、前記p型ドーパントを含む第5半導体層と、を含む請求項3乃至12のうち、いずれか1項に記載の発光素子。 - 前記第3半導体層と第5半導体層のp型ドーパントは相互同一ドーピング濃度を有する請求項13に記載の発光素子。
- 前記第3半導体層と前記第5半導体層のそれぞれの厚さは、前記第2導電型半導体層の厚さの5%〜50%である請求項14に記載の発光素子。
- 前記第4半導体層は、前記第3半導体層と前記第5半導体層のそれぞれの厚さより薄い厚さを有する請求項14または15に記載の発光素子。
- 前記第3〜第5半導体層は、相互同一半導体で形成され、同一エネルギーバンドギャップを有する請求項13乃至16のうち、いずれか1項に記載の発光素子。
- 前記第4半導体層は、多数の層からなる超格子構造を有する請求項13乃至17のうち、いずれか1項に記載の発光素子。
- 前記キャリア注入層のn型ドーパントの濃度は1E16〜1E20である 請求項13乃至18のうち、いずれか1項に記載の発光素子。
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KR1020120116371A KR101976455B1 (ko) | 2012-10-19 | 2012-10-19 | 발광 소자 및 발광 소자 패키지 |
KR10-2012-0116371 | 2012-10-19 |
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US (1) | US9190571B2 (ja) |
EP (1) | EP2722897B1 (ja) |
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KR (1) | KR101976455B1 (ja) |
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WO2017057149A1 (ja) * | 2015-09-28 | 2017-04-06 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP2019530228A (ja) * | 2016-09-13 | 2019-10-17 | エルジー イノテック カンパニー リミテッド | 半導体素子およびこれを含む半導体素子パッケージ |
KR20200094790A (ko) * | 2017-12-28 | 2020-08-07 | 알레디아 | 3차원 발광 다이오드를 갖는 광전자 장치 |
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JP2021027194A (ja) * | 2019-08-06 | 2021-02-22 | 日機装株式会社 | 窒化物半導体発光素子 |
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JP5739967B2 (ja) | 2015-06-24 |
KR101976455B1 (ko) | 2019-05-09 |
US20140110720A1 (en) | 2014-04-24 |
US9190571B2 (en) | 2015-11-17 |
TW201419576A (zh) | 2014-05-16 |
CN103779466A (zh) | 2014-05-07 |
TWI548115B (zh) | 2016-09-01 |
CN103779466B (zh) | 2017-12-22 |
KR20140050247A (ko) | 2014-04-29 |
EP2722897A1 (en) | 2014-04-23 |
EP2722897B1 (en) | 2020-06-24 |
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