JP2014082028A5 - - Google Patents

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Publication number
JP2014082028A5
JP2014082028A5 JP2012227596A JP2012227596A JP2014082028A5 JP 2014082028 A5 JP2014082028 A5 JP 2014082028A5 JP 2012227596 A JP2012227596 A JP 2012227596A JP 2012227596 A JP2012227596 A JP 2012227596A JP 2014082028 A5 JP2014082028 A5 JP 2014082028A5
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JP
Japan
Prior art keywords
sample
micro
charged particle
probe
particle beam
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JP2012227596A
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English (en)
Japanese (ja)
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JP5887247B2 (ja
JP2014082028A (ja
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Priority claimed from JP2012227596A external-priority patent/JP5887247B2/ja
Priority to JP2012227596A priority Critical patent/JP5887247B2/ja
Priority to CN201380053492.4A priority patent/CN104737266B/zh
Priority to PCT/JP2013/077453 priority patent/WO2014061524A1/ja
Priority to US14/434,687 priority patent/US9362088B2/en
Priority to DE112013004612.1T priority patent/DE112013004612B4/de
Publication of JP2014082028A publication Critical patent/JP2014082028A/ja
Publication of JP2014082028A5 publication Critical patent/JP2014082028A5/ja
Publication of JP5887247B2 publication Critical patent/JP5887247B2/ja
Application granted granted Critical
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JP2012227596A 2012-10-15 2012-10-15 荷電粒子線装置および試料作製法 Active JP5887247B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012227596A JP5887247B2 (ja) 2012-10-15 2012-10-15 荷電粒子線装置および試料作製法
DE112013004612.1T DE112013004612B4 (de) 2012-10-15 2013-10-09 Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren
PCT/JP2013/077453 WO2014061524A1 (ja) 2012-10-15 2013-10-09 荷電粒子線装置および試料作製法
US14/434,687 US9362088B2 (en) 2012-10-15 2013-10-09 Charged particle beam device and sample preparation method
CN201380053492.4A CN104737266B (zh) 2012-10-15 2013-10-09 带电粒子束装置以及试样制作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012227596A JP5887247B2 (ja) 2012-10-15 2012-10-15 荷電粒子線装置および試料作製法

Publications (3)

Publication Number Publication Date
JP2014082028A JP2014082028A (ja) 2014-05-08
JP2014082028A5 true JP2014082028A5 (https=) 2015-11-05
JP5887247B2 JP5887247B2 (ja) 2016-03-16

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JP2012227596A Active JP5887247B2 (ja) 2012-10-15 2012-10-15 荷電粒子線装置および試料作製法

Country Status (5)

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US (1) US9362088B2 (https=)
JP (1) JP5887247B2 (https=)
CN (1) CN104737266B (https=)
DE (1) DE112013004612B4 (https=)
WO (1) WO2014061524A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102383571B1 (ko) * 2014-06-30 2022-04-06 가부시키가이샤 히다치 하이테크 사이언스 자동 시료 제작 장치
JP6231461B2 (ja) * 2014-10-31 2017-11-15 アオイ電子株式会社 試料固定装置
US10410828B2 (en) 2014-12-22 2019-09-10 Carl Zeiss Microscopy, Llc Charged particle beam system and methods
CN105158516B (zh) * 2015-08-20 2018-10-16 上海华力微电子有限公司 一种集成电路分析中透射电镜平面样品的制备方法
CN106226134A (zh) * 2016-07-29 2016-12-14 上海华力微电子有限公司 制备透射电子显微镜样品的方法
JP6931214B2 (ja) * 2017-01-19 2021-09-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6885576B2 (ja) * 2017-01-19 2021-06-16 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6974820B2 (ja) * 2017-03-27 2021-12-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2774884B2 (ja) 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
JPH0582479A (ja) 1991-09-19 1993-04-02 Hitachi Ltd 集束イオンビーム装置
JP3547143B2 (ja) * 1997-07-22 2004-07-28 株式会社日立製作所 試料作製方法
JP3401426B2 (ja) 1998-03-23 2003-04-28 日本電子株式会社 Ｆｉｂ−ｓｅｍ装置における試料加工方法およびｆｉｂ−ｓｅｍ装置
JP2001235321A (ja) * 1999-12-13 2001-08-31 Mitsubishi Electric Corp 集束イオンビーム装置，集束イオンビーム装置の制御方法及び接触検出方法
US6452174B1 (en) * 1999-12-13 2002-09-17 Mitsubishi Denki Kabushiki Kaisha Charged particle beam apparatus and method of controlling same
JP4408538B2 (ja) * 2000-07-24 2010-02-03 株式会社日立製作所 プローブ装置
JP4088533B2 (ja) * 2003-01-08 2008-05-21 株式会社日立ハイテクノロジーズ 試料作製装置および試料作製方法
JP2004245660A (ja) * 2003-02-13 2004-09-02 Seiko Instruments Inc 小片試料の作製とその壁面の観察方法及びそのシステム
US7112790B1 (en) * 2003-08-13 2006-09-26 Cypress Semiconductor Corp. Method to prepare TEM samples
US8455821B2 (en) * 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
DE102009008166A1 (de) * 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen
JP4996648B2 (ja) * 2009-04-27 2012-08-08 株式会社日立製作所 プローブ装置
CN202189227U (zh) * 2011-07-26 2012-04-11 中国科学院物理研究所 纳米图形化和超宽频电磁特性测量系统

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