JP2013545316A - 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法 - Google Patents

硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法 Download PDF

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Publication number
JP2013545316A
JP2013545316A JP2013542172A JP2013542172A JP2013545316A JP 2013545316 A JP2013545316 A JP 2013545316A JP 2013542172 A JP2013542172 A JP 2013542172A JP 2013542172 A JP2013542172 A JP 2013542172A JP 2013545316 A JP2013545316 A JP 2013545316A
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Japan
Prior art keywords
indium
copper
molecular precursor
sulfur
selenium
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JP2013542172A
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English (en)
Japanese (ja)
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JP2013545316A5 (https=
Inventor
ヤンヤン カオ
ダブリュ．カートン ジュニア ジョン
ケイ ジョンソン リンダ
メイジュン ルー
マラジョヴィッチ イリーナ
ロディカ ラデュ ダニエラ
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2013545316A publication Critical patent/JP2013545316A/ja
Publication of JP2013545316A5 publication Critical patent/JP2013545316A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2013542172A 2010-12-03 2011-12-01 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法 Pending JP2013545316A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41935510P 2010-12-03 2010-12-03
US41935110P 2010-12-03 2010-12-03
US61/419,351 2010-12-03
US61/419,355 2010-12-03
PCT/US2011/062847 WO2012075259A1 (en) 2010-12-03 2011-12-01 Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films

Publications (2)

Publication Number Publication Date
JP2013545316A true JP2013545316A (ja) 2013-12-19
JP2013545316A5 JP2013545316A5 (https=) 2014-12-25

Family

ID=45218939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013542172A Pending JP2013545316A (ja) 2010-12-03 2011-12-01 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法

Country Status (3)

Country Link
US (1) US20130264526A1 (https=)
JP (1) JP2013545316A (https=)
WO (1) WO2012075259A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017178687A (ja) * 2016-03-30 2017-10-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
ES2523141T3 (es) * 2012-06-14 2014-11-21 Suntricity Cells Corporation Solución de precursor para formar una película delgada de semiconductor a base de CIS, CIGS o CZTS
WO2014009815A2 (en) * 2012-07-09 2014-01-16 Nanoco Technologies, Ltd. Group xiii selenide nanoparticles
US9082619B2 (en) 2012-07-09 2015-07-14 International Solar Electric Technology, Inc. Methods and apparatuses for forming semiconductor films
BR112015014013A2 (pt) * 2012-12-20 2017-07-11 Saint Gobain método para produzir um semicondutor composto e célula solar de película fina
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
JP5938486B2 (ja) * 2013-11-07 2016-06-22 積水化学工業株式会社 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法
CN111416007B (zh) * 2020-04-01 2022-04-29 中国科学院物理研究所 一种铜基吸光层薄膜及其制备方法、铜基薄膜太阳能电池

Citations (4)

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JP2005524244A (ja) * 2002-04-29 2005-08-11 エレクトリシテ　ド　フランス　セルビス　ナショナル Ｉ−ｉｉｉ−ｖｉ２化合物を基礎とする光起電性用途向け薄膜半導体の製造方法
JP2009540537A (ja) * 2006-02-23 2009-11-19 デューレン、イェルーン カー．イェー． ファン 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷
WO2010094048A2 (en) * 2009-02-15 2010-08-19 Jacob Woodruff Solar cell absorber layer formed from equilibrium precursor(s)
JP2011088808A (ja) * 2009-09-28 2011-05-06 Rohm & Haas Electronic Materials Llc セレン／第１ｂ族インク、並びにその製造方法および使用方法

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GB8715082D0 (en) * 1987-06-26 1987-08-05 Prutec Ltd Solar cells
US20070178620A1 (en) * 2006-02-02 2007-08-02 Basol Bulent M Method of Forming Copper Indium Gallium Containing Precursors And Semiconductor Compound Layers
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP5738601B2 (ja) * 2008-03-05 2015-06-24 ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド 薄膜太陽電池セルのための緩衝層蒸着
AU2010254119A1 (en) * 2009-05-26 2012-01-12 Purdue Research Foundation Thin films for photovoltaic cells
US7838403B1 (en) * 2009-09-14 2010-11-23 International Business Machines Corporation Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices
JP2013512311A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
US9117964B2 (en) * 2010-06-29 2015-08-25 Merck Patent Gmbh Preparation of semiconductor films

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JP2005524244A (ja) * 2002-04-29 2005-08-11 エレクトリシテ　ド　フランス　セルビス　ナショナル Ｉ−ｉｉｉ−ｖｉ２化合物を基礎とする光起電性用途向け薄膜半導体の製造方法
JP2009540537A (ja) * 2006-02-23 2009-11-19 デューレン、イェルーン カー．イェー． ファン 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷
WO2010094048A2 (en) * 2009-02-15 2010-08-19 Jacob Woodruff Solar cell absorber layer formed from equilibrium precursor(s)
JP2011088808A (ja) * 2009-09-28 2011-05-06 Rohm & Haas Electronic Materials Llc セレン／第１ｂ族インク、並びにその製造方法および使用方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017178687A (ja) * 2016-03-30 2017-10-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法
WO2017170750A1 (ja) * 2016-03-30 2017-10-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法

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US20130264526A1 (en) 2013-10-10
WO2012075259A1 (en) 2012-06-07

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