JP2013545316A5 - - Google Patents
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- Publication number
- JP2013545316A5 JP2013545316A5 JP2013542172A JP2013542172A JP2013545316A5 JP 2013545316 A5 JP2013545316 A5 JP 2013545316A5 JP 2013542172 A JP2013542172 A JP 2013542172A JP 2013542172 A JP2013542172 A JP 2013542172A JP 2013545316 A5 JP2013545316 A5 JP 2013545316A5
- Authority
- JP
- Japan
- Prior art keywords
- indium
- copper
- selenide
- sulfide
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 239000011669 selenium Substances 0.000 claims description 36
- 239000002243 precursor Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 24
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 23
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052711 selenium Inorganic materials 0.000 claims description 22
- 229910052717 sulfur Inorganic materials 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 239000013110 organic ligand Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 239000011593 sulfur Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 10
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims description 10
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 claims description 10
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 6
- 150000001879 copper Chemical class 0.000 claims description 6
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002258 gallium Chemical class 0.000 claims description 6
- 150000002471 indium Chemical class 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 description 11
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000004119 disulfanediyl group Chemical group *SS* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41935510P | 2010-12-03 | 2010-12-03 | |
| US41935110P | 2010-12-03 | 2010-12-03 | |
| US61/419,355 | 2010-12-03 | ||
| US61/419,351 | 2010-12-03 | ||
| PCT/US2011/062847 WO2012075259A1 (en) | 2010-12-03 | 2011-12-01 | Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013545316A JP2013545316A (ja) | 2013-12-19 |
| JP2013545316A5 true JP2013545316A5 (https=) | 2014-12-25 |
Family
ID=45218939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013542172A Pending JP2013545316A (ja) | 2010-12-03 | 2011-12-01 | 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20130264526A1 (https=) |
| JP (1) | JP2013545316A (https=) |
| WO (1) | WO2012075259A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150118144A1 (en) * | 2012-05-14 | 2015-04-30 | E I Du Pont Nemours And Company | Dispersible metal chalcogenide nanoparticles |
| EP2674964B1 (en) * | 2012-06-14 | 2014-10-29 | Suntricity Cells Corporation | Precursor solution for forming a semiconductor thin film on the basis of CIS, CIGS or CZTS |
| KR101712053B1 (ko) * | 2012-07-09 | 2017-03-03 | 나노코 테크놀로지스 리미티드 | 13족 셀렌화물 나노입자들 |
| US9082619B2 (en) | 2012-07-09 | 2015-07-14 | International Solar Electric Technology, Inc. | Methods and apparatuses for forming semiconductor films |
| ES2686620T3 (es) * | 2012-12-20 | 2018-10-18 | Saint-Gobain Glass France | Procedimiento para la fabricación de un semiconductor compuesto así como célula solar de capas delgadas |
| US9634161B2 (en) | 2013-05-01 | 2017-04-25 | Delaware State University | Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers |
| EP3067950A4 (en) * | 2013-11-07 | 2017-06-07 | Sekisui Chemical Co., Ltd. | Coating material for forming semiconductors, semiconductor thin film, thin film solar cell and method for manufacturing thin film solar cell |
| JP6641217B2 (ja) * | 2016-03-30 | 2020-02-05 | 東京応化工業株式会社 | 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法 |
| CN111416007B (zh) * | 2020-04-01 | 2022-04-29 | 中国科学院物理研究所 | 一种铜基吸光层薄膜及其制备方法、铜基薄膜太阳能电池 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8715082D0 (en) * | 1987-06-26 | 1987-08-05 | Prutec Ltd | Solar cells |
| FR2839201B1 (fr) * | 2002-04-29 | 2005-04-01 | Electricite De France | Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques |
| US20070178620A1 (en) * | 2006-02-02 | 2007-08-02 | Basol Bulent M | Method of Forming Copper Indium Gallium Containing Precursors And Semiconductor Compound Layers |
| CN101438416B (zh) * | 2006-02-23 | 2011-11-23 | 耶罗恩·K·J·范杜伦 | 从金属间微米薄片颗粒的半导体前体层的高生产量印刷 |
| CN101471394A (zh) * | 2007-12-29 | 2009-07-01 | 中国科学院上海硅酸盐研究所 | 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法 |
| US8062922B2 (en) * | 2008-03-05 | 2011-11-22 | Global Solar Energy, Inc. | Buffer layer deposition for thin-film solar cells |
| KR20110129392A (ko) * | 2009-02-15 | 2011-12-01 | 자콥 우드러프 | 균형 전구체（들）로부터 형성된 태양전지 흡수제층 |
| WO2010138635A2 (en) * | 2009-05-26 | 2010-12-02 | Purdue Research Foundation | Thin films for photovoltaic cells |
| US7838403B1 (en) * | 2009-09-14 | 2010-11-23 | International Business Machines Corporation | Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices |
| US8309179B2 (en) * | 2009-09-28 | 2012-11-13 | Rohm And Haas Electronics Materials Llc | Selenium/group 1b ink and methods of making and using same |
| US8470636B2 (en) * | 2009-11-25 | 2013-06-25 | E I Du Pont De Nemours And Company | Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles |
| KR20130034662A (ko) * | 2010-06-29 | 2013-04-05 | 메르크 파텐트 게엠베하 | 반도체막의 제조 |
-
2011
- 2011-12-01 US US13/885,105 patent/US20130264526A1/en not_active Abandoned
- 2011-12-01 WO PCT/US2011/062847 patent/WO2012075259A1/en not_active Ceased
- 2011-12-01 JP JP2013542172A patent/JP2013545316A/ja active Pending
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