JP2013543260A5 - - Google Patents

Download PDF

Info

Publication number
JP2013543260A5
JP2013543260A5 JP2013530733A JP2013530733A JP2013543260A5 JP 2013543260 A5 JP2013543260 A5 JP 2013543260A5 JP 2013530733 A JP2013530733 A JP 2013530733A JP 2013530733 A JP2013530733 A JP 2013530733A JP 2013543260 A5 JP2013543260 A5 JP 2013543260A5
Authority
JP
Japan
Prior art keywords
igct
cells
cell
diode
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013530733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013543260A (ja
JP5972881B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2011/066979 external-priority patent/WO2012041958A2/en
Publication of JP2013543260A publication Critical patent/JP2013543260A/ja
Publication of JP2013543260A5 publication Critical patent/JP2013543260A5/ja
Application granted granted Critical
Publication of JP5972881B2 publication Critical patent/JP5972881B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013530733A 2010-09-29 2011-09-29 逆導通パワー半導体デバイス Active JP5972881B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10181546.2 2010-09-29
EP10181546 2010-09-29
PCT/EP2011/066979 WO2012041958A2 (en) 2010-09-29 2011-09-29 Reverse-conducting power semiconductor device

Publications (3)

Publication Number Publication Date
JP2013543260A JP2013543260A (ja) 2013-11-28
JP2013543260A5 true JP2013543260A5 (enExample) 2016-06-16
JP5972881B2 JP5972881B2 (ja) 2016-08-17

Family

ID=43743553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013530733A Active JP5972881B2 (ja) 2010-09-29 2011-09-29 逆導通パワー半導体デバイス

Country Status (6)

Country Link
US (1) US8847277B2 (enExample)
EP (1) EP2622639B1 (enExample)
JP (1) JP5972881B2 (enExample)
KR (1) KR101749671B1 (enExample)
CN (1) CN103119715B (enExample)
WO (1) WO2012041958A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2930753A1 (en) 2014-04-09 2015-10-14 ABB Technology AG Turn-off power semiconductor device
EP3130004B1 (en) * 2014-04-10 2019-05-08 ABB Schweiz AG Turn-off power semiconductor device and method for manufacturing the same
EP2960941B1 (en) 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
JP6602380B2 (ja) * 2014-12-17 2019-11-06 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
CN104637997A (zh) * 2015-01-28 2015-05-20 电子科技大学 一种双模逆导门极换流晶闸管及其制备方法
EP3073530B1 (en) * 2015-03-23 2017-05-03 ABB Schweiz AG Reverse conducting power semiconductor device
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
CN115039233A (zh) 2020-02-03 2022-09-09 日立能源瑞士股份公司 反向导通功率半导体器件及其制造方法
US12342559B2 (en) 2020-03-31 2025-06-24 Hitachi Energy Ltd Turn-off power semiconductor device with gate runners
WO2021197774A1 (en) 2020-03-31 2021-10-07 Abb Power Grids Switzerland Ag Power semiconductor device comprising a thyristor and a bipolar junction transistor
DE212021000403U1 (de) 2020-08-31 2023-02-24 Hitachi Energy Switzerland Ag Elektronische Vorrichtung, Gehäuse und Halbleiterchip dafür
EP4053915B1 (en) * 2021-03-02 2024-06-19 Hitachi Energy Ltd Gate-commuted thyristor cell with a base region having a varying thickness
WO2023099298A1 (en) 2021-12-03 2023-06-08 Hitachi Energy Switzerland Ag Semiconductor device and method for operating a semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342234B2 (enExample) 1973-02-12 1978-11-09
CH668505A5 (de) 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE4403429C2 (de) 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement
US5594261A (en) * 1994-04-05 1997-01-14 Harris Corporation Device for isolating parallel sub-elements with reverse conducting diode regions
JP3571353B2 (ja) * 1998-09-10 2004-09-29 三菱電機株式会社 半導体装置
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
JP4471575B2 (ja) * 2003-02-25 2010-06-02 三菱電機株式会社 圧接型半導体装置
US7489490B2 (en) * 2006-06-07 2009-02-10 International Rectifier Corporation Current limiting MOSFET structure for solid state relays

Similar Documents

Publication Publication Date Title
JP2013543260A5 (enExample)
BR112015020666A2 (pt) processo de fabricação de uma bateria monolítica totalmente sólida
EP3561877A3 (en) Three dimensional memory array architecture
JP2013540852A5 (enExample)
IL220967A0 (en) Bipolar plates and regenerative fuel cell stacks including same
JP2012021904A5 (enExample)
IL215768A0 (en) Electrode (anode and cathode) performance enhancement by composite formation with graphene oxide
MX2016006714A (es) Perovskita y otros materiales de celda solar.
WO2012158424A3 (en) Resistive memory cell
HUE047829T2 (hu) Szilárd oxid üzemanyag cella kompozit anyagú anóddal, javított mechanikai integritással és fokozott hatásfokkal
BR112012011216A2 (pt) alojamento de bateria para fixar pelo menos um dispositivo de armazenamento de energia eletroquímica em um compartimento de célula, bateria compreendendo uma pluralidade de dispositivos de armazenamento de energia eletroquímica e método para produzir uma alojamento de bateria
AR083449A1 (es) Celula de levadura fermentadora de pentosas y glucosa
EP3279987A4 (en) Proton conductor, fuel-cell solid-electrolyte layer, cell structure, and fuel cell provided with same
JP2013529123A5 (enExample)
EP3133684B8 (en) Electrolyte solution, electrolyte membrane, electrode catalyst layer, membrane-electrode assembly, and fuel cell
IT1394853B1 (it) Cella fotovoltaica ad elevata efficienza di conversione
WO2012041958A3 (en) Reverse-conducting power semiconductor device
PH12016502437A1 (en) Solar cell and method for producing solar cell
JP2010103506A5 (ja) 光電変換装置
BR112017024352A2 (pt) camadas interfaciais de titanato em dispositivos de material de perovskita
EP2571060A3 (en) Solar cell module
EP3373371A4 (en) Single cell structure for fuel cells, and fuel cell stack structure wherein said fuel cell single cells are stacked
EP2706576A3 (en) Diode and power conversion system
FR2961022B1 (fr) Cellule photovoltaïque pour application sous flux solaire concentre
JP2010283269A5 (enExample)