CN103119715B - 反向导通功率半导体器件 - Google Patents

反向导通功率半导体器件 Download PDF

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Publication number
CN103119715B
CN103119715B CN201180047291.4A CN201180047291A CN103119715B CN 103119715 B CN103119715 B CN 103119715B CN 201180047291 A CN201180047291 A CN 201180047291A CN 103119715 B CN103119715 B CN 103119715B
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CN
China
Prior art keywords
layer
igct
cathode
diode
anode
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Active
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CN201180047291.4A
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English (en)
Chinese (zh)
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CN103119715A (zh
Inventor
M.拉希莫
M.阿诺德
T.施蒂亚斯尼
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Hitachi Energy Ltd
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ABB Technology AG
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Publication of CN103119715A publication Critical patent/CN103119715A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201180047291.4A 2010-09-29 2011-09-29 反向导通功率半导体器件 Active CN103119715B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10181546.2 2010-09-29
EP10181546 2010-09-29
PCT/EP2011/066979 WO2012041958A2 (en) 2010-09-29 2011-09-29 Reverse-conducting power semiconductor device

Publications (2)

Publication Number Publication Date
CN103119715A CN103119715A (zh) 2013-05-22
CN103119715B true CN103119715B (zh) 2016-08-03

Family

ID=43743553

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180047291.4A Active CN103119715B (zh) 2010-09-29 2011-09-29 反向导通功率半导体器件

Country Status (6)

Country Link
US (1) US8847277B2 (enExample)
EP (1) EP2622639B1 (enExample)
JP (1) JP5972881B2 (enExample)
KR (1) KR101749671B1 (enExample)
CN (1) CN103119715B (enExample)
WO (1) WO2012041958A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2930753A1 (en) 2014-04-09 2015-10-14 ABB Technology AG Turn-off power semiconductor device
EP3130004B1 (en) * 2014-04-10 2019-05-08 ABB Schweiz AG Turn-off power semiconductor device and method for manufacturing the same
EP2960941B1 (en) 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
JP6602380B2 (ja) * 2014-12-17 2019-11-06 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
CN104637997A (zh) * 2015-01-28 2015-05-20 电子科技大学 一种双模逆导门极换流晶闸管及其制备方法
EP3073530B1 (en) * 2015-03-23 2017-05-03 ABB Schweiz AG Reverse conducting power semiconductor device
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
CN115039233A (zh) 2020-02-03 2022-09-09 日立能源瑞士股份公司 反向导通功率半导体器件及其制造方法
US12342559B2 (en) 2020-03-31 2025-06-24 Hitachi Energy Ltd Turn-off power semiconductor device with gate runners
WO2021197774A1 (en) 2020-03-31 2021-10-07 Abb Power Grids Switzerland Ag Power semiconductor device comprising a thyristor and a bipolar junction transistor
DE212021000403U1 (de) 2020-08-31 2023-02-24 Hitachi Energy Switzerland Ag Elektronische Vorrichtung, Gehäuse und Halbleiterchip dafür
EP4053915B1 (en) * 2021-03-02 2024-06-19 Hitachi Energy Ltd Gate-commuted thyristor cell with a base region having a varying thickness
WO2023099298A1 (en) 2021-12-03 2023-06-08 Hitachi Energy Switzerland Ag Semiconductor device and method for operating a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
US20070284672A1 (en) * 2006-06-07 2007-12-13 International Rectifier Corporation Current limiting mosfet structure for solid state relays

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342234B2 (enExample) 1973-02-12 1978-11-09
CH668505A5 (de) 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE4403429C2 (de) 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement
US5594261A (en) * 1994-04-05 1997-01-14 Harris Corporation Device for isolating parallel sub-elements with reverse conducting diode regions
JP3571353B2 (ja) * 1998-09-10 2004-09-29 三菱電機株式会社 半導体装置
JP4471575B2 (ja) * 2003-02-25 2010-06-02 三菱電機株式会社 圧接型半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
US20070284672A1 (en) * 2006-06-07 2007-12-13 International Rectifier Corporation Current limiting mosfet structure for solid state relays

Also Published As

Publication number Publication date
JP2013543260A (ja) 2013-11-28
KR101749671B1 (ko) 2017-06-21
JP5972881B2 (ja) 2016-08-17
US20130207157A1 (en) 2013-08-15
WO2012041958A3 (en) 2012-08-02
US8847277B2 (en) 2014-09-30
EP2622639B1 (en) 2015-01-21
WO2012041958A2 (en) 2012-04-05
KR20130100144A (ko) 2013-09-09
EP2622639A2 (en) 2013-08-07
CN103119715A (zh) 2013-05-22

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Effective date of registration: 20180503

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Address after: Swiss Baden

Patentee after: Hitachi energy Switzerland AG

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Patentee before: ABB grid Switzerland AG

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Effective date of registration: 20231226

Address after: Zurich, SUI

Patentee after: Hitachi Energy Co.,Ltd.

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