KR101749671B1 - 역-도통 전력 반도체 디바이스 - Google Patents

역-도통 전력 반도체 디바이스 Download PDF

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Publication number
KR101749671B1
KR101749671B1 KR1020137007778A KR20137007778A KR101749671B1 KR 101749671 B1 KR101749671 B1 KR 101749671B1 KR 1020137007778 A KR1020137007778 A KR 1020137007778A KR 20137007778 A KR20137007778 A KR 20137007778A KR 101749671 B1 KR101749671 B1 KR 101749671B1
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South Korea
Prior art keywords
layer
cells
igct
anode
cathode
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English (en)
Korean (ko)
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KR20130100144A (ko
Inventor
무나프 라히모
마르틴 아놀드
토마스 스샤스니
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에이비비 슈바이쯔 아게
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

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  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020137007778A 2010-09-29 2011-09-29 역-도통 전력 반도체 디바이스 Active KR101749671B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10181546.2 2010-09-29
EP10181546 2010-09-29
PCT/EP2011/066979 WO2012041958A2 (en) 2010-09-29 2011-09-29 Reverse-conducting power semiconductor device

Publications (2)

Publication Number Publication Date
KR20130100144A KR20130100144A (ko) 2013-09-09
KR101749671B1 true KR101749671B1 (ko) 2017-06-21

Family

ID=43743553

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137007778A Active KR101749671B1 (ko) 2010-09-29 2011-09-29 역-도통 전력 반도체 디바이스

Country Status (6)

Country Link
US (1) US8847277B2 (enExample)
EP (1) EP2622639B1 (enExample)
JP (1) JP5972881B2 (enExample)
KR (1) KR101749671B1 (enExample)
CN (1) CN103119715B (enExample)
WO (1) WO2012041958A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2930753A1 (en) 2014-04-09 2015-10-14 ABB Technology AG Turn-off power semiconductor device
EP3130004B1 (en) * 2014-04-10 2019-05-08 ABB Schweiz AG Turn-off power semiconductor device and method for manufacturing the same
EP2960941B1 (en) 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
JP6602380B2 (ja) * 2014-12-17 2019-11-06 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
CN104637997A (zh) * 2015-01-28 2015-05-20 电子科技大学 一种双模逆导门极换流晶闸管及其制备方法
EP3073530B1 (en) * 2015-03-23 2017-05-03 ABB Schweiz AG Reverse conducting power semiconductor device
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
CN115039233A (zh) 2020-02-03 2022-09-09 日立能源瑞士股份公司 反向导通功率半导体器件及其制造方法
US12342559B2 (en) 2020-03-31 2025-06-24 Hitachi Energy Ltd Turn-off power semiconductor device with gate runners
WO2021197774A1 (en) 2020-03-31 2021-10-07 Abb Power Grids Switzerland Ag Power semiconductor device comprising a thyristor and a bipolar junction transistor
DE212021000403U1 (de) 2020-08-31 2023-02-24 Hitachi Energy Switzerland Ag Elektronische Vorrichtung, Gehäuse und Halbleiterchip dafür
EP4053915B1 (en) * 2021-03-02 2024-06-19 Hitachi Energy Ltd Gate-commuted thyristor cell with a base region having a varying thickness
WO2023099298A1 (en) 2021-12-03 2023-06-08 Hitachi Energy Switzerland Ag Semiconductor device and method for operating a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040164316A1 (en) 2003-02-25 2004-08-26 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device having dummy segment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342234B2 (enExample) 1973-02-12 1978-11-09
CH668505A5 (de) 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE4403429C2 (de) 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement
US5594261A (en) * 1994-04-05 1997-01-14 Harris Corporation Device for isolating parallel sub-elements with reverse conducting diode regions
JP3571353B2 (ja) * 1998-09-10 2004-09-29 三菱電機株式会社 半導体装置
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
US7489490B2 (en) * 2006-06-07 2009-02-10 International Rectifier Corporation Current limiting MOSFET structure for solid state relays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040164316A1 (en) 2003-02-25 2004-08-26 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device having dummy segment

Also Published As

Publication number Publication date
JP2013543260A (ja) 2013-11-28
JP5972881B2 (ja) 2016-08-17
US20130207157A1 (en) 2013-08-15
WO2012041958A3 (en) 2012-08-02
US8847277B2 (en) 2014-09-30
EP2622639B1 (en) 2015-01-21
CN103119715B (zh) 2016-08-03
WO2012041958A2 (en) 2012-04-05
KR20130100144A (ko) 2013-09-09
EP2622639A2 (en) 2013-08-07
CN103119715A (zh) 2013-05-22

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