MX2016006714A - Perovskita y otros materiales de celda solar. - Google Patents

Perovskita y otros materiales de celda solar.

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Publication number
MX2016006714A
MX2016006714A MX2016006714A MX2016006714A MX2016006714A MX 2016006714 A MX2016006714 A MX 2016006714A MX 2016006714 A MX2016006714 A MX 2016006714A MX 2016006714 A MX2016006714 A MX 2016006714A MX 2016006714 A MX2016006714 A MX 2016006714A
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Mexico
Prior art keywords
perovskite
materials
solar cell
active layer
interfacial layers
Prior art date
Application number
MX2016006714A
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English (en)
Other versions
MX364267B (es
Inventor
D Irwin Michael
A Chute Jerred
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Hunt Energy Entpr Llc
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Publication date
Application filed by Hunt Energy Entpr Llc filed Critical Hunt Energy Entpr Llc
Publication of MX2016006714A publication Critical patent/MX2016006714A/es
Publication of MX364267B publication Critical patent/MX364267B/es

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  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

Los dispositivos fotovoltaicos tales como celdas solares, baterías de celda solar híbridas y otros de tales dispositivos pueden incluir una capa activa colocada entre dos electrodos, la capa activa que tiene material de perovskita y otro material tal como material mesoporoso, capas interfaciales, capas interfaciales de recubrimiento delgado y combinaciones de los mismos. El material de perovskita puede ser fotoactivo. El material de perovskita se puede colocar entre dos o más de otros materiales en el dispositivo fotovoltaico. La inclusión de estos materiales en varios arreglos dentro de una capa activa de un dispositivo fotovoltaico puede mejorar el desempeño del dispositivo. Se pueden incluir otros materiales para mejorar adicionalmente el desempeño del dispositivo, tales como, por ejemplo: perovskitas adicionales y capas interfaciales adicionales.
MX2016006714A 2013-11-26 2014-11-24 Perovskita y otros materiales de celda solar. MX364267B (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361909168P 2013-11-26 2013-11-26
US201361913665P 2013-12-09 2013-12-09
US14/209,013 US9136408B2 (en) 2013-11-26 2014-03-13 Perovskite and other solar cell materials
US14/448,053 US9331292B2 (en) 2013-11-26 2014-07-31 Perovskite and other solar cell materials
PCT/US2014/067024 WO2015080990A1 (en) 2013-11-26 2014-11-24 Perovskite and other solar cell materials

Publications (2)

Publication Number Publication Date
MX2016006714A true MX2016006714A (es) 2017-01-16
MX364267B MX364267B (es) 2019-04-17

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MX2016006714A MX364267B (es) 2013-11-26 2014-11-24 Perovskita y otros materiales de celda solar.
MX2019004512A MX2019004512A (es) 2013-11-26 2016-05-23 Perovskita y otros materiales de celda solar.

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Country Status (12)

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US (10) US9136408B2 (es)
EP (2) EP3075012B1 (es)
JP (1) JP2017504188A (es)
KR (6) KR101740206B1 (es)
CN (2) CN105934807B (es)
AU (6) AU2014354911B2 (es)
BR (1) BR112016011873B1 (es)
CA (2) CA2931692C (es)
ES (1) ES2847398T3 (es)
MX (2) MX364267B (es)
PL (1) PL3075012T3 (es)
WO (1) WO2015080990A1 (es)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110180757A1 (en) * 2009-12-08 2011-07-28 Nemanja Vockic Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
WO2013126385A1 (en) 2012-02-21 2013-08-29 Northwestern University Photoluminescent compounds
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
US9425396B2 (en) 2013-11-26 2016-08-23 Hunt Energy Enterprises L.L.C. Perovskite material layer processing
US9583724B2 (en) 2013-12-19 2017-02-28 Nutech Ventures Systems and methods for scalable perovskite device fabrication
US9812660B2 (en) 2013-12-19 2017-11-07 Nutech Ventures Method for single crystal growth of photovoltaic perovskite material and devices
US9966198B2 (en) * 2014-04-24 2018-05-08 Northwestern University Solar cells with perovskite-based light sensitization layers
CN106537535A (zh) * 2014-05-20 2017-03-22 魁北克电力公司 用于光电池的电极
US9614169B2 (en) * 2014-06-30 2017-04-04 Sharp Laboratories Of America, Inc. Back contact perovskite solar cell
US10297754B2 (en) * 2014-08-01 2019-05-21 International Business Machines Corporation Techniques for perovskite layer crystallization
GB201421133D0 (en) 2014-11-28 2015-01-14 Cambridge Entpr Ltd Electroluminescent device
GB2536862A (en) * 2014-12-19 2016-10-05 Bangor Univ Solar cells
US10062922B2 (en) * 2015-01-26 2018-08-28 University Of Dayton Lithium batteries having artificial solid electrolyte interphase membrane for anode protection
WO2016123399A1 (en) * 2015-01-28 2016-08-04 Nutech Ventures Systems and methods for fabricating single crystal photovoltaic perovskite materials and devices incorporating the same
KR20170108109A (ko) * 2015-03-06 2017-09-26 후지필름 가부시키가이샤 광전 변환 소자, 태양 전지 및 조성물
US10005800B2 (en) * 2015-03-12 2018-06-26 Korea Research Institute Of Chemical Technology Mixed metal halide perovskite compound and semiconductor device including the same
WO2016200897A1 (en) * 2015-06-08 2016-12-15 The Florida State University Research Foundation, Inc. Single-layer light-emitting diodes using organometallic halide perovskite/ionic-conducting polymer composite
KR102463735B1 (ko) * 2015-06-22 2022-11-04 삼성디스플레이 주식회사 유기 발광 소자, 이의 제조 방법 및 이를 포함하는 유기 발광 표시 장치
KR20190034698A (ko) * 2015-07-10 2019-04-02 히 솔라, 엘.엘.씨. 페로브스카이트 물질 층 가공
WO2017031021A1 (en) * 2015-08-14 2017-02-23 Massachusetts Institute Of Technology Perovskite solar cells including semiconductor nanomaterials
WO2017031373A1 (en) * 2015-08-18 2017-02-23 Massachusetts Institute Of Technology Planar mixed-metal perovskite for optoelectronic applications
EP3341982A1 (en) 2015-08-24 2018-07-04 King Abdullah University Of Science And Technology Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof
FR3044827B1 (fr) * 2015-12-04 2018-03-16 Centre National De La Recherche Scientifique - Cnrs - Cellule photovoltaique
JP6431513B2 (ja) * 2015-12-24 2018-11-28 旭化成株式会社 組成物
WO2017184292A1 (en) * 2016-04-22 2017-10-26 The Trustees Of Princeton University Organic-inorganic hybrid perovskite nanocrystals and methods of making the same
WO2017196782A1 (en) 2016-05-13 2017-11-16 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Highly stable electronic device employing hydrophobic composite coating layer
WO2018007586A1 (en) * 2016-07-07 2018-01-11 Technische Universiteit Eindhoven Perovskite contacting passivating barrier layer for solar cells
EP3279960A1 (en) * 2016-08-02 2018-02-07 Aalto University Foundation Method for inkjet printing an organic-inorganic perovskite
WO2018052032A1 (ja) * 2016-09-14 2018-03-22 積水化学工業株式会社 フレキシブル太陽電池
CN109661733A (zh) * 2016-09-21 2019-04-19 积水化学工业株式会社 太阳能电池
KR101701192B1 (ko) 2016-12-05 2017-02-01 인천대학교 산학협력단 투명 광전 소자 및 그 제조 방법
CN106653927B (zh) * 2016-12-23 2018-01-02 济南大学 一种基于Cs2SnI6＆CH3NH3PbI3体异质结的太阳能电池的制备方法
WO2018152494A1 (en) * 2017-02-17 2018-08-23 Nutech Ventures Passivation of defects in perovskite materials for improved solar cell efficiency and stability
US10457148B2 (en) 2017-02-24 2019-10-29 Epic Battery Inc. Solar car
KR101969918B1 (ko) * 2017-03-15 2019-04-17 한국과학기술연구원 광안정성이 증가된 유기태양전지 및 이의 제조방법
US10249782B2 (en) 2017-03-24 2019-04-02 International Business Machines Corporation High voltage photovoltaics integrated with light emitting diode containing zinc oxide containing layer
WO2018187384A1 (en) * 2017-04-03 2018-10-11 Epic Battery Inc. Modular solar battery
US12046425B2 (en) * 2017-04-14 2024-07-23 Cubicpv Inc. Photovoltaic device encapsulation
US9880458B1 (en) 2017-04-17 2018-01-30 Hee Solar, L.L.C. Hybrid perovskite material processing
US11316484B2 (en) * 2017-05-25 2022-04-26 Boise State University Optically gated transistor selector for variable resistive memory device
US10700226B2 (en) * 2017-05-25 2020-06-30 Boise State University Optically activated transistor, switch, and photodiode
WO2019036093A2 (en) * 2017-06-14 2019-02-21 Nutech Ventures, Inc. COATING OF PEROVSKITE GRAINS WITH SILICA SHELLS TO IMPROVE THE STABILITY AND EFFICIENCY OF ELECTRONIC DEVICES BASED ON PEROVSKITE
US11653555B2 (en) * 2017-09-01 2023-05-16 King Abdullah University Of Science And Technology Methods and apparatuses for fabricating perovskite-based devices on cost-effective flexible conductive substrates
WO2019067900A1 (en) * 2017-09-28 2019-04-04 Brown University DOUBLE TITANIUM (IV) BASED HALIDE BANDS WITH ADJUSTABLE 1.0-1.8 EV BANDS FOR PHOTOVOLTAIC APPLICATIONS
CN109599270B (zh) * 2017-09-30 2020-08-11 清华大学 一种光电自储能器件的制备方法
WO2019075570A1 (en) * 2017-10-19 2019-04-25 The Governing Council Of The University Of Toronto QUASI BIDIMENSIONAL LAMINATE PÉROVSKITE MATERIAL, RELATED DEVICES AND METHODS OF MAKING SAME
US10553367B2 (en) * 2017-10-20 2020-02-04 Qatar Foundation Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
CN108123045A (zh) * 2017-12-19 2018-06-05 广东工业大学 一种无铅钙钛矿太阳能电池及其制备方法
US20190334048A1 (en) * 2018-04-26 2019-10-31 California Institute Of Technology Multi-junction photovoltaic cell having wide bandgap oxide conductor between subcells and method of making same
CN108963032B (zh) * 2018-06-26 2019-12-31 暨南大学 双面无机钙钛矿太阳能电池及其制备方法和应用
KR102087859B1 (ko) * 2018-07-17 2020-03-12 한국화학연구원 신규 캐소드 버퍼층 소재, 및 이를 포함하는 유기 또는 유/무기 하이브리드 광전소자
KR102108191B1 (ko) * 2018-10-29 2020-05-08 한국과학기술연구원 2차원 물질로 패시베이션된 할라이드 페로브스카이트 기반 광전소자
FR3088344B1 (fr) 2018-11-09 2021-04-09 Commissariat Energie Atomique Procede pour la formation d’une electrode transparente
WO2020209921A2 (en) * 2019-01-30 2020-10-15 Nutech Ventures Conversion of halide perovskite surfaces to insoluble, wide-bandgap lead oxysalts for enhanced solar cell stability
US10727428B1 (en) * 2019-02-01 2020-07-28 Natioinal Technology & Engineering Solutions Of Sa Organic-semiconducting hybrid solar cell
CN112352327B (zh) * 2019-03-19 2024-06-11 株式会社东芝 光电转换元件以及光电转换元件的制造方法
TWI723434B (zh) * 2019-06-21 2021-04-01 位速科技股份有限公司 複合光伏結構及其製造方法
US11489082B2 (en) 2019-07-30 2022-11-01 Epic Battery Inc. Durable solar panels
FR3102887B1 (fr) 2019-11-05 2022-06-24 Commissariat Energie Atomique Couche N à taux de carbone contrôlé dans un dispositif photovoltaïque de type pérovskite
FR3104816A1 (fr) 2019-12-12 2021-06-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Couche composite pérovskite/matériau de type P ou de type N dans un dispositif photovoltaïque
KR20220148824A (ko) * 2020-02-04 2022-11-07 유비쿼터스 에너지 인코포레이티드 유기 광전지 장치용 복합 전하 수송층
US11702589B1 (en) * 2020-03-09 2023-07-18 University Of South Florida Electrochemical cells for harvesting and storing energy and devices including the same
WO2021188673A1 (en) * 2020-03-20 2021-09-23 Garmin Switzerland Gmbh Multi-cell photovoltaic for a portable electronic device
WO2022006164A1 (en) * 2020-06-30 2022-01-06 The University Of North Carolina At Chapel Hill Lead absorbing materials for the sequestration of lead in perovskite solar cells
KR102231326B1 (ko) * 2020-09-07 2021-03-24 한국전자기술연구원 태양전지-배터리 일체형 디바이스 및 그의 제조방법
FR3115929B1 (fr) 2020-11-05 2023-09-01 Commissariat Energie Atomique Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N
FR3115928B1 (fr) 2020-11-05 2023-05-12 Commissariat Energie Atomique Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé
CN112993157B (zh) * 2021-02-04 2022-09-02 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种水平结构的忆阻器及均一性优化方法
US12057803B2 (en) 2021-06-16 2024-08-06 Conti Innovation Center, Llc Mechanically stacked solar transmissive cells or modules
WO2023000092A1 (en) * 2021-07-19 2023-01-26 De La Fuente Sanchez Alfonso Photovoltaic window blind system
CN113921711B (zh) * 2021-09-30 2024-08-02 华中科技大学 一种岛状低阻通路忆阻功能层材料、忆阻器及制备方法
KR102653690B1 (ko) * 2021-10-28 2024-04-03 한국전자기술연구원 태양전지 배터리 일체형 디바이스 및 그의 제조방법
WO2023091046A1 (en) * 2021-11-16 2023-05-25 National University Of Science And Technology "Misis" Method of fabricating thin-film semiconductor photovoltaic converters
CN114262608B (zh) * 2022-01-06 2023-05-16 郑州大学 一种具有多重响应圆偏振发光mof-钙钛矿材料及其应用
CN118405726A (zh) * 2024-06-26 2024-07-30 北京卫蓝新能源科技股份有限公司 一种具有氧离子导体和氧空位变价金属氧化物的复合材料及其锂电池

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1270828B (it) * 1993-09-03 1997-05-13 Chon Int Co Ltd Processo per la sintesi di polveri ceramiche cristalline di composti di perovskite
JP2000101106A (ja) 1998-09-25 2000-04-07 Fuji Photo Film Co Ltd 光電変換素子用半導体膜の製造方法、光電変換素子用半導体膜および光電気化学電池
US6429318B1 (en) * 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
EP1328982B1 (en) * 2000-03-24 2005-07-20 Cymbet Corporation Device enclosures and devices with integrated battery
US6599447B2 (en) 2000-11-29 2003-07-29 Advanced Technology Materials, Inc. Zirconium-doped BST materials and MOCVD process forming same
US7105360B2 (en) * 2002-03-08 2006-09-12 International Business Machines Corporation Low temperature melt-processing of organic-inorganic hybrid
US20050150542A1 (en) * 2004-01-13 2005-07-14 Arun Madan Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology
JP2008503035A (ja) * 2004-06-15 2008-01-31 ダイソル・リミテッド 表面積を完全に利用する光起電モジュール
CN100413807C (zh) 2004-06-24 2008-08-27 阿鲁策株式会社 生产钙钛矿型复合氧化物的方法
US7196366B2 (en) * 2004-08-05 2007-03-27 The Trustees Of Princeton University Stacked organic photosensitive devices
KR101001744B1 (ko) * 2004-12-27 2010-12-15 삼성전자주식회사 탄소 나노 튜브를 이용한 광전 변환 전극 및 이를 구비한태양 전지
US20070028961A1 (en) * 2005-08-04 2007-02-08 General Electric Company Organic dye compositions and use thereof in photovoltaic cells
JP4882457B2 (ja) * 2006-03-31 2012-02-22 富士通株式会社 薄膜キャパシタおよびこれを有する半導体装置
KR101223558B1 (ko) 2006-04-17 2013-01-17 삼성에스디아이 주식회사 염료 감응 태양 전지용 염료 및 이로부터 제조된 염료 감응태양 전지
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
KR100839371B1 (ko) * 2006-11-17 2008-06-19 삼성에스디아이 주식회사 염료감응 태양전지
JP5163849B2 (ja) * 2007-01-17 2013-03-13 セイコーエプソン株式会社 光電変換素子の製造方法、光電変換素子および電子機器
WO2008118422A1 (en) 2007-03-26 2008-10-02 The Trustees Of Columbia University In The City Of New York Metal oxide nanocrystals: preparation and uses
KR100844871B1 (ko) 2007-04-06 2008-07-09 경북대학교 산학협력단 염료감응형 태양전지용 염료 및 이를 이용한 태양전지
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
US8563855B2 (en) * 2007-07-23 2013-10-22 Basf Se Tandem photovoltaic cell
MY157221A (en) 2007-09-25 2016-05-13 First Solar Inc Photovoltaic devices including an interfacial layer
KR20090061300A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 복합형 리튬 2차 전지 및 이를 채용한 전자 장치
US10103359B2 (en) * 2008-04-09 2018-10-16 Agency For Science, Technology And Research Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices
TW200952184A (en) * 2008-06-03 2009-12-16 Univ Nat Taiwan Structure of mixed type heterojunction thin film solar cells and its manufacturing method
JP2010034409A (ja) 2008-07-30 2010-02-12 Renesas Technology Corp 半導体装置
CN106276811A (zh) * 2008-09-08 2017-01-04 新加坡南洋理工大学 作为电极材料的纳米粒子装饰的纳米结构化材料及其获得方法
CN102177599A (zh) * 2008-09-26 2011-09-07 密歇根大学董事会 有机叠层太阳电池
EP2403006A4 (en) 2009-02-27 2014-04-02 Nat Inst For Materials Science PN-HETERO-SUBSTITUTE AND MANUFACTURING METHOD THEREFOR
KR101038469B1 (ko) * 2009-04-13 2011-06-01 광주과학기술원 고분자 전해질층을 이용한 적층형 유기태양전지 및 그 제조방법
WO2011021982A1 (en) * 2009-08-20 2011-02-24 Nanyang Technological University Integrated electrode architectures for energy generation and storage
US20120227787A1 (en) * 2009-11-16 2012-09-13 Tomer Drori Graphene-based photovoltaic device
US20130240027A1 (en) * 2010-06-07 2013-09-19 Solarno, Inc. Multijunction hybrid solar cell with parallel connection and nanomaterial charge collecting interlayers
US20130206219A1 (en) * 2010-08-06 2013-08-15 Juanita N. Kurtin Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
JP2013543633A (ja) * 2010-09-27 2013-12-05 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド 導電重合体−炭素材料の複合対電極及びその製造方法
JP5817327B2 (ja) 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
US20120145234A1 (en) * 2010-10-10 2012-06-14 The Trustees Of Princeton University Graphene electrodes for solar cells
KR20120055921A (ko) 2010-11-24 2012-06-01 엘지디스플레이 주식회사 광전소자 및 그를 포함하는 광전모듈
KR101172374B1 (ko) 2011-02-14 2012-08-08 성균관대학교산학협력단 페로브스카이트계 염료를 이용한 염료감응 태양 전지 및 이의 제조방법
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
WO2013000026A1 (en) * 2011-06-30 2013-01-03 Newsouth Innovations Pty Limited Dielectric structures in solar cells
DE112012003329T5 (de) * 2011-08-11 2014-04-30 National University Of Singapore Tandem-Solarzelle mit Graphen-Zwischenschicht und Verfahren zum Herstellen davon
CN103022057A (zh) * 2011-09-21 2013-04-03 索尼公司 多结太阳能电池、光电转换元件和化合物半导体层叠层结构体
US9484475B2 (en) 2011-10-11 2016-11-01 The Trustees Of The University Of Pennsylvania Semiconductor ferroelectric compositions and their use in photovoltaic devices
EP2788995B9 (en) 2011-12-08 2018-07-04 Ecole Polytechnique Fédérale de Lausanne (EPFL) Semiconductor electrode comprising a blocking layer
US9082914B2 (en) * 2012-01-13 2015-07-14 Gaurdian Industries Corp. Photovoltaic module including high contact angle coating on one or more outer surfaces thereof, and/or methods of making the same
WO2013126385A1 (en) 2012-02-21 2013-08-29 Northwestern University Photoluminescent compounds
JP6149856B2 (ja) * 2012-04-04 2017-06-21 コニカミノルタ株式会社 有機光電変換素子およびこれを用いた太陽電池
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10079320B2 (en) 2012-05-18 2018-09-18 Oxford University Innovation Limited Optoelectronic device comprising perovskites
EP3029696B1 (en) 2012-05-18 2018-11-14 Oxford University Innovation Limited Optoelectronic device comprising porous scaffold material and perovskites
KR101408696B1 (ko) * 2012-05-30 2014-06-18 이화여자대학교 산학협력단 금 나노입자를 함유하는 하이브리드 나노구조체 및 이를 포함하는 태양전지용 광전극
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
US20140060639A1 (en) * 2012-08-31 2014-03-06 OneSun, LLC Copper oxide core/shell nanocrystals for use in photovoltaic cells
US20140076392A1 (en) * 2012-09-18 2014-03-20 Tsmc Solar Ltd. Solar cell
ES2707296T3 (es) 2012-09-18 2019-04-03 Univ Oxford Innovation Ltd Dispositivo optoelectrónico
JP2014143333A (ja) * 2013-01-25 2014-08-07 Ricoh Co Ltd 固体色素増感型太陽電池、固体色素増感型太陽電池モジュール
CN103078014B (zh) * 2013-01-29 2015-05-06 上海交通大学 铁酸铋/钛酸铋钠-钛酸钡异质结构铁电薄膜太阳能电池的制备方法
WO2014132076A1 (en) * 2013-03-01 2014-09-04 Isis Innovation Limited Semiconducting layer production process
JP6128900B2 (ja) 2013-03-08 2017-05-17 大阪瓦斯株式会社 無機ホール輸送材を使用したペロブスカイト系光電変換装置
WO2014151522A1 (en) 2013-03-15 2014-09-25 Hunt Energy Enterprises, L.L.C. Perovskite and other solar cell materials
KR20160004389A (ko) 2013-05-06 2016-01-12 그레이트셀 솔라 에스.에이. 유기-무기 페로브스카이트 기반 태양 전지
TWI485154B (zh) 2013-05-09 2015-05-21 Univ Nat Cheng Kung 具鈣鈦礦結構吸光材料之有機混成太陽能電池及其製造方法
US20150053259A1 (en) * 2013-08-22 2015-02-26 Plant PV P-type doping of ii-vi materials with rapid vapor deposition using radical nitrogen
JP6304980B2 (ja) 2013-09-10 2018-04-04 大阪瓦斯株式会社 ペロブスカイト系材料を用いた光電変換装置
US20150122316A1 (en) 2013-10-16 2015-05-07 OmniPV, Inc. Photovoltaic cells including halide materials
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
JP2015119102A (ja) 2013-12-19 2015-06-25 アイシン精機株式会社 ハイブリッド型太陽電池
CN104091888B (zh) 2014-07-17 2016-08-17 湖北大学 一种钙钛矿型太阳能电池及其制备方法
US20160155974A1 (en) * 2014-12-01 2016-06-02 The Regents Of The University Of California Complex pnictide metal halides for optoelectronic applications
JP2016178167A (ja) 2015-03-19 2016-10-06 積水化学工業株式会社 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池

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