BR112017024352A2 - camadas interfaciais de titanato em dispositivos de material de perovskita - Google Patents

camadas interfaciais de titanato em dispositivos de material de perovskita

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Publication number
BR112017024352A2
BR112017024352A2 BR112017024352A BR112017024352A BR112017024352A2 BR 112017024352 A2 BR112017024352 A2 BR 112017024352A2 BR 112017024352 A BR112017024352 A BR 112017024352A BR 112017024352 A BR112017024352 A BR 112017024352A BR 112017024352 A2 BR112017024352 A2 BR 112017024352A2
Authority
BR
Brazil
Prior art keywords
perovskite material
active layer
interfacial
materials
interfacial layers
Prior art date
Application number
BR112017024352A
Other languages
English (en)
Other versions
BR112017024352B1 (pt
Inventor
D. IRWIN Michael
A. CHUTE Jerred
V. DHAS Vivek
Original Assignee
Hee Solar, L.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/711,430 external-priority patent/US9520512B2/en
Application filed by Hee Solar, L.L.C. filed Critical Hee Solar, L.L.C.
Publication of BR112017024352A2 publication Critical patent/BR112017024352A2/pt
Publication of BR112017024352B1 publication Critical patent/BR112017024352B1/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

a presente invenção se refere a dispositivos fotovoltaicos, tais como células solares, baterias híbridas de célula solar e outros tais dispositivos, que podem incluir uma camada ativa disposta entre dois eletrodos. a camada ativa pode ter material de perovskita e outro material, tais como material mesoporoso, camadas interfaciais, camadas interfaciais de revestimento fino e combinações dos mesmos. o material de perovskita pode ser fotoativo. a camada ativa pode incluir um titanato. o material de perovskita pode estar disposto entre dois ou mais outros materiais no dispositivo fotovoltaico. a inclusão desses materiais em várias disposições dentro de uma camada ativa de um dispositivo fotovoltaico pode melhorar o desempenho do dispositivo. outros materiais podem ser incluídos para melhorar adicionalmente o desempenho do dispositivo, tais como, por exemplo: perovskitas adicionais e camadas interfaciais adicionais
BR112017024352-0A 2015-05-13 2016-05-12 Dispositivos fotovoltaicos com camadas interfaciais de titanato e material de perovskita BR112017024352B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/711,430 US9520512B2 (en) 2013-11-26 2015-05-13 Titanate interfacial layers in perovskite material devices
US14/711,430 2015-05-13
PCT/US2016/031986 WO2016183273A1 (en) 2015-05-13 2016-05-12 Titanate interfacial layers in perovskite material devices

Publications (2)

Publication Number Publication Date
BR112017024352A2 true BR112017024352A2 (pt) 2018-07-31
BR112017024352B1 BR112017024352B1 (pt) 2023-05-16

Family

ID=57248549

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112017024352-0A BR112017024352B1 (pt) 2015-05-13 2016-05-12 Dispositivos fotovoltaicos com camadas interfaciais de titanato e material de perovskita

Country Status (10)

Country Link
EP (2) EP3295491A4 (pt)
JP (3) JP2018515931A (pt)
KR (1) KR102008737B1 (pt)
CN (2) CN108124492A (pt)
AU (4) AU2016261906A1 (pt)
BR (1) BR112017024352B1 (pt)
CA (1) CA2985784C (pt)
MX (1) MX367777B (pt)
MY (1) MY184633A (pt)
WO (1) WO2016183273A1 (pt)

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KR102008737B1 (ko) * 2015-05-13 2019-08-09 히 솔라, 엘.엘.씨. 페로브스카이트 물질 디바이스에서의 티타네이트 계면 층
GB201817167D0 (en) 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
CN109904243B (zh) * 2019-01-25 2020-09-11 南京理工大学 基于界面优化的类纸基柔性紫外光探测器及其制备方法
EP3955329B1 (en) * 2019-04-11 2024-05-01 Panasonic Intellectual Property Management Co., Ltd. Solar cell
CN112280367A (zh) * 2020-10-28 2021-01-29 无锡极电光能科技有限公司 电子传输层涂布墨水及其制备方法和应用

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JP5240807B2 (ja) * 2004-09-24 2013-07-17 独立行政法人産業技術総合研究所 光電変換構造体及びその製造方法
KR101165601B1 (ko) * 2011-10-07 2012-08-06 한국기계연구원 양자점 잉크 제조 방법 및 이를 구비하는 태양전지와 상기 태양전지의 제조 방법
PL2850627T3 (pl) * 2012-05-18 2016-10-31 Urządzenie optoelektroniczne zawierające porowaty materiał rusztowania oraz perowskity
EP2850669B1 (en) * 2012-05-18 2016-02-24 Isis Innovation Limited Photovoltaic device comprising perovskites
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JP2015230923A (ja) 2014-06-03 2015-12-21 積水化学工業株式会社 薄膜太陽電池及び薄膜太陽電池の製造方法
JP5667714B1 (ja) * 2014-06-16 2015-02-12 積水化学工業株式会社 薄膜太陽電池及び薄膜太陽電池の製造方法
CN104167492A (zh) * 2014-06-25 2014-11-26 上海北京大学微电子研究院 一种钙钛矿电池、及其制备方法
JP2016178167A (ja) * 2015-03-19 2016-10-06 積水化学工業株式会社 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池
KR102008737B1 (ko) 2015-05-13 2019-08-09 히 솔라, 엘.엘.씨. 페로브스카이트 물질 디바이스에서의 티타네이트 계면 층
JP2019082745A (ja) * 2017-10-11 2019-05-30 ベイ ラブズ インク． 人工知能利用駆出率決定方法

Also Published As

Publication number Publication date
CN108124492A (zh) 2018-06-05
JP2018515931A (ja) 2018-06-14
JP7244343B2 (ja) 2023-03-22
AU2018282426A1 (en) 2019-01-24
MX2017014493A (es) 2018-03-23
MY184633A (en) 2021-04-12
AU2023200817A1 (en) 2023-03-09
CA2985784C (en) 2018-09-04
JP2019169718A (ja) 2019-10-03
EP4350725A2 (en) 2024-04-10
WO2016183273A1 (en) 2016-11-17
EP3295491A1 (en) 2018-03-21
AU2016261906A1 (en) 2017-11-30
CA2985784A1 (en) 2016-11-17
AU2021200670A1 (en) 2021-03-04
BR112017024352B1 (pt) 2023-05-16
CN113257580A (zh) 2021-08-13
KR20180025853A (ko) 2018-03-09
JP2021168417A (ja) 2021-10-21
EP3295491A4 (en) 2018-09-26
KR102008737B1 (ko) 2019-08-09
MX367777B (es) 2019-09-05

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B25F Entry of change of name and/or headquarter and transfer of application, patent and certif. of addition of invention: change of name on requirement

Owner name: HEE SOLAR, L.L.C. (US)

Free format text: A FIM DE ATENDER A(S) ALTERACAO(OES) DE NOME REQUERIDA(S) ATRAVES DA PETICAO NO870210053108, DE 14/06/2021, E NECESSARIO LEGALIZACAO CONSULAR OU APOSTILA E TRADUCAOJURAMENTADA.

B25D Requested change of name of applicant approved

Owner name: HUNT PEROVSKITE TECHNOLOGIES, L.L.C. (US)

B25E Requested change of name of applicant rejected

Owner name: HUNT PEROVSKITE TECHNOLOGIES, L.L.C. (US)

Free format text: INDEFERIDO O PEDIDO DE ALTERACAO DE NOME CONTIDO NA PETICAO 870210053108 DE 14/06/2021, POR AUSENCIA DE CUMPRIMENTO DA EXIGENCIA PUBLICADA NA RPI NO 2637, DE 20/07/2021.

B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 12/05/2016, OBSERVADAS AS CONDICOES LEGAIS