MX2017014493A - Capas interfaciales de titanato en dispositivos de material de perovskita. - Google Patents

Capas interfaciales de titanato en dispositivos de material de perovskita.

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Publication number
MX2017014493A
MX2017014493A MX2017014493A MX2017014493A MX2017014493A MX 2017014493 A MX2017014493 A MX 2017014493A MX 2017014493 A MX2017014493 A MX 2017014493A MX 2017014493 A MX2017014493 A MX 2017014493A MX 2017014493 A MX2017014493 A MX 2017014493A
Authority
MX
Mexico
Prior art keywords
interfacial layers
perovskite material
active layer
titanate
materials
Prior art date
Application number
MX2017014493A
Other languages
English (en)
Other versions
MX367777B (es
Inventor
D Irwin Michael
A Chute Jerred
V Dhas Vivek
Original Assignee
Hee Solar Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/711,430 external-priority patent/US9520512B2/en
Application filed by Hee Solar Llc filed Critical Hee Solar Llc
Publication of MX2017014493A publication Critical patent/MX2017014493A/es
Publication of MX367777B publication Critical patent/MX367777B/es

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

Dispositivos fotovoltaicos tales como celdas solares, baterías de celdas solar híbridas y otros dispositivos de tal clase pueden incluir una capa activa dispuesta entre dos electrodos. La capa activa puede tener material de perovskita y otro material tal como material mesoporoso, capas interfaciales, capas interfaciales de recubrimiento delgado y combinaciones de los mismos. El material de perovskita puede ser fotoactivo. La capa activa puede incluir un titanato. El material de perovskita se puede disponer entre dos o más materiales diferente en el dispositivo fotovoltaico. La inclusión de estos materiales en varios arreglos dentro de una capa activa de un dispositivo fotovoltaico puede mejorar el desempeño del dispositivo. Otros materiales se pueden incluir para mejorar adicionalmente el desempeño del dispositivo, tales como, por ejemplo: perovskitas adicionales y capas interfaciales adicionales.
MX2017014493A 2015-05-13 2016-05-12 Capas interfaciales de titanato en dispositivos de material de perovskita. MX367777B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/711,430 US9520512B2 (en) 2013-11-26 2015-05-13 Titanate interfacial layers in perovskite material devices
PCT/US2016/031986 WO2016183273A1 (en) 2015-05-13 2016-05-12 Titanate interfacial layers in perovskite material devices

Publications (2)

Publication Number Publication Date
MX2017014493A true MX2017014493A (es) 2018-03-23
MX367777B MX367777B (es) 2019-09-05

Family

ID=57248549

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017014493A MX367777B (es) 2015-05-13 2016-05-12 Capas interfaciales de titanato en dispositivos de material de perovskita.

Country Status (10)

Country Link
EP (2) EP4350725A2 (es)
JP (3) JP2018515931A (es)
KR (1) KR102008737B1 (es)
CN (2) CN113257580A (es)
AU (4) AU2016261906A1 (es)
BR (1) BR112017024352B1 (es)
CA (1) CA2985784C (es)
MX (1) MX367777B (es)
MY (1) MY184633A (es)
WO (1) WO2016183273A1 (es)

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* Cited by examiner, † Cited by third party
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CN113257580A (zh) * 2015-05-13 2021-08-13 熙太阳能有限责任公司 在钙钛矿材料器件中的钛酸盐界面层
GB201817167D0 (en) 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
CN109904243B (zh) * 2019-01-25 2020-09-11 南京理工大学 基于界面优化的类纸基柔性紫外光探测器及其制备方法
EP3955329B1 (en) * 2019-04-11 2024-05-01 Panasonic Intellectual Property Management Co., Ltd. Solar cell
CN112280367A (zh) * 2020-10-28 2021-01-29 无锡极电光能科技有限公司 电子传输层涂布墨水及其制备方法和应用

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WO2014151522A1 (en) * 2013-03-15 2014-09-25 Hunt Energy Enterprises, L.L.C. Perovskite and other solar cell materials
KR20160004389A (ko) * 2013-05-06 2016-01-12 그레이트셀 솔라 에스.에이. 유기-무기 페로브스카이트 기반 태양 전지
JP6304980B2 (ja) * 2013-09-10 2018-04-04 大阪瓦斯株式会社 ペロブスカイト系材料を用いた光電変換装置
CN104091887B (zh) 2014-04-30 2017-02-15 上海北京大学微电子研究院 基于全溶胶凝胶工艺的钙钛矿太阳能电池及其制备方法
JP2015230923A (ja) 2014-06-03 2015-12-21 積水化学工業株式会社 薄膜太陽電池及び薄膜太陽電池の製造方法
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CN113257580A (zh) 2015-05-13 2021-08-13 熙太阳能有限责任公司 在钙钛矿材料器件中的钛酸盐界面层
JP2019082745A (ja) * 2017-10-11 2019-05-30 ベイ ラブズ インク． 人工知能利用駆出率決定方法

Also Published As

Publication number Publication date
JP2018515931A (ja) 2018-06-14
MX367777B (es) 2019-09-05
AU2023200817A1 (en) 2023-03-09
KR20180025853A (ko) 2018-03-09
BR112017024352B1 (pt) 2023-05-16
CA2985784C (en) 2018-09-04
EP4350725A2 (en) 2024-04-10
EP3295491A1 (en) 2018-03-21
KR102008737B1 (ko) 2019-08-09
CA2985784A1 (en) 2016-11-17
MY184633A (en) 2021-04-12
JP2021168417A (ja) 2021-10-21
WO2016183273A1 (en) 2016-11-17
JP7244343B2 (ja) 2023-03-22
JP2019169718A (ja) 2019-10-03
AU2021200670A1 (en) 2021-03-04
BR112017024352A2 (pt) 2018-07-31
CN108124492A (zh) 2018-06-05
EP3295491A4 (en) 2018-09-26
CN113257580A (zh) 2021-08-13
AU2018282426A1 (en) 2019-01-24
AU2016261906A1 (en) 2017-11-30

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