JP2013524464A - レーザ生成プラズマeuv光源におけるターゲット材料送出保護のためのシステム及び方法 - Google Patents
レーザ生成プラズマeuv光源におけるターゲット材料送出保護のためのシステム及び方法 Download PDFInfo
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
- G21G5/00—Alleged conversion of chemical elements by chemical reaction
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- H—ELECTRICITY
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- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
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- H—ELECTRICITY
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- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
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- H—ELECTRICITY
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- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/006—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state details of the ejection system, e.g. constructional details of the nozzle
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Abstract
【選択図】 図1
Description
本出願は、2010年4月9日出願の米国特許仮出願出願番号第61/342,179号、及び2011年3月30日出願の米国実用新案特許出願出願番号第13/075,500号の恩典を請求するものであり、これら特許の内容全体は、引用により本明細書に組み込まれている。
24 ターゲット材料送出システム
60 EUVコントローラ
80 液滴制御システム
84 シュラウド
Claims (21)
- チャンバと、
前記チャンバ内の照射領域にターゲット材料放出点と該照射領域の間の経路に沿ってターゲット材料を送出するターゲット材料の流れを供給する供給源と、
ガスの少なくとも一部分が前記流れに向かう方向に流れる前記チャンバ内のガス流と、
EUV放射線を生成するプラズマを発生させるために前記照射領域でターゲット材料を照射するレーザビームを生成するシステムと、
前記流れの一部分に沿って位置決めされ、該流れを前記ガス流から遮蔽する第1のシュラウド部分及び対向する開放部分を有するシュラウドと、
を含むことを特徴とする装置。 - 前記シュラウドは、前記経路に垂直な平面において部分的にリング状の断面を有することを特徴とする請求項1に記載の装置。
- 前記リングは、少なくとも1つの平坦面を有することを特徴とする請求項2に記載の装置。
- 前記シュラウドは、前記経路と平行な方向に長形であることを特徴とする請求項1に記載の装置。
- 前記シュラウドは、少なくとも1つの穴が形成された管を含むことを特徴とする請求項1に記載の装置。
- 前記シュラウドと前記ターゲット材料放出点の間に前記流れに沿って位置決めされた液滴捕捉管を更に含むことを特徴とする請求項1に記載の装置。
- 前記経路は、非垂直であり、前記液滴捕捉管は、該非垂直経路から逸れるターゲット材料から反射光学系を保護するシールドであることを特徴とする請求項6に記載の装置。
- チャンバと、
前記チャンバ内の照射領域に該照射領域とターゲット材料放出点の間の経路に沿ってターゲット材料を送出するターゲット材料液滴の流れを供給する供給源と、
前記チャンバ内のガス流と、
EUV放射線を生成するプラズマを発生させるために前記照射領域で液滴を照射するビームを生成するレーザと、
前記流れの一部分に沿って位置決めされ、液滴の位置的安定性を増大させるために前記経路に垂直な平面において該流れを部分的に包み込むシュラウドと、
を含むことを特徴とする装置。 - 前記シュラウドは、前記経路に垂直な平面において部分的にリング状の断面を有することを特徴とする請求項8に記載の装置。
- 前記リングは、少なくとも1つの平坦面を有することを特徴とする請求項9に記載の装置。
- 前記シュラウドは、前記経路と平行な方向に長形であることを特徴とする請求項8に記載の装置。
- 前記シュラウドは、少なくとも1つの穴が形成された管を含むことを特徴とする請求項8に記載の装置。
- 前記シュラウドと前記ターゲット材料放出点の間に前記流れに沿って位置決めされた液滴捕捉管を更に含むことを特徴とする請求項8に記載の装置。
- 前記経路は、非垂直であり、前記液滴捕捉管は、該非垂直経路から逸れるターゲット材料から反射光学系を保護するシールドであることを特徴とする請求項13に記載の装置。
- チャンバ内の照射領域にターゲット材料放出点と該照射領域の間の経路に沿ってターゲット材料を送出するターゲット材料液滴の流れを供給する段階と、
前記液滴流れに向かう方向にガスを流す段階と、
EUV放射線を生成するプラズマを発生させるために前記照射領域で液滴をレーザビームで照射する段階と、
液滴を前記ガス流から遮蔽する第1のシュラウド部分及び対向する開放部分を有するシュラウドを前記流れの一部分に沿って位置決めする段階と、
を含むことを特徴とする方法。 - 前記流す段階及び照射する段階は、同時に行われることを特徴とする請求項15に記載の方法。
- 前記シュラウドは、前記経路に垂直な平面において部分的にリング状の断面を有することを特徴とする請求項15に記載の方法。
- 前記リングは、少なくとも1つの平坦面を有することを特徴とする請求項15に記載の方法。
- 前記シュラウドは、前記経路と平行な方向に長形であることを特徴とする請求項15に記載の方法。
- 前記シュラウドと前記ターゲット材料放出点の間に前記流れに沿って液滴捕捉管を位置決めする段階を更に含むことを特徴とする請求項15に記載の方法。
- 前記流れの少なくとも一部分が、液滴の流れであることを特徴とする請求項1に記載の装置。
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US34217910P | 2010-04-09 | 2010-04-09 | |
US61/342,179 | 2010-04-09 | ||
US13/075,500 | 2011-03-30 | ||
US13/075,500 US8263953B2 (en) | 2010-04-09 | 2011-03-30 | Systems and methods for target material delivery protection in a laser produced plasma EUV light source |
PCT/US2011/030981 WO2011126949A1 (en) | 2010-04-09 | 2011-04-01 | Systems and method for target material delivery protection in a laser produced plasma euv light source |
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JP2013524464A true JP2013524464A (ja) | 2013-06-17 |
JP2013524464A5 JP2013524464A5 (ja) | 2014-05-22 |
JP5828887B2 JP5828887B2 (ja) | 2015-12-09 |
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US (1) | US8263953B2 (ja) |
EP (1) | EP2556514A4 (ja) |
JP (1) | JP5828887B2 (ja) |
KR (1) | KR101726281B1 (ja) |
CN (1) | CN102822903B (ja) |
SG (1) | SG184080A1 (ja) |
TW (1) | TWI507089B (ja) |
WO (1) | WO2011126949A1 (ja) |
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JP2016540346A (ja) * | 2013-12-02 | 2016-12-22 | エーエスエムエル ネザーランズ ビー.ブイ. | レーザ生成プラズマeuv光源におけるソース材料送出の装置 |
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JP2016531392A (ja) * | 2013-08-02 | 2016-10-06 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源用コンポーネント、関連した放射源およびリソグラフィ装置 |
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JP2019012293A (ja) * | 2013-12-02 | 2019-01-24 | エーエスエムエル ネザーランズ ビー.ブイ. | レーザ生成プラズマeuv光源におけるソース材料送出の装置及び方法 |
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JP2021021760A (ja) * | 2019-07-25 | 2021-02-18 | ギガフォトン株式会社 | Euvチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法 |
JP7328046B2 (ja) | 2019-07-25 | 2023-08-16 | ギガフォトン株式会社 | Euvチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法 |
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EP2556514A4 (en) | 2014-07-02 |
CN102822903B (zh) | 2016-04-27 |
TW201143540A (en) | 2011-12-01 |
US20110248191A1 (en) | 2011-10-13 |
TWI507089B (zh) | 2015-11-01 |
JP5828887B2 (ja) | 2015-12-09 |
EP2556514A1 (en) | 2013-02-13 |
US8263953B2 (en) | 2012-09-11 |
SG184080A1 (en) | 2012-10-30 |
KR20130042488A (ko) | 2013-04-26 |
WO2011126949A1 (en) | 2011-10-13 |
CN102822903A (zh) | 2012-12-12 |
KR101726281B1 (ko) | 2017-04-12 |
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