JP2013513959A - レーザ照射によって半導体デバイスを製造する方法 - Google Patents
レーザ照射によって半導体デバイスを製造する方法 Download PDFInfo
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- JP2013513959A JP2013513959A JP2012543619A JP2012543619A JP2013513959A JP 2013513959 A JP2013513959 A JP 2013513959A JP 2012543619 A JP2012543619 A JP 2012543619A JP 2012543619 A JP2012543619 A JP 2012543619A JP 2013513959 A JP2013513959 A JP 2013513959A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000000034 method Methods 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 239000002019 doping agent Substances 0.000 claims description 12
- 230000000877 morphologic effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003070 Statistical process control Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
【選択図】図2
Description
本発明の特定の実施例を下記に示す。
実施例1に記載した方法の代替として、前のCD測定に基づいて、次のレーザドーパント活性化によってゲートCDのばらつきを補償し、ゲートCDのばらつきも、その後のゲート堆積プロセスばらつきの推定に基づいて、ゲートを形成する前にn−およびp−ウェル領域におけるレーザドーパント活性化によって補償してもよい。
Claims (13)
- 半導体基板の1つの領域において、少なくとも1つのプロセス性能パラメータが決定される1つのプロセスステップまたは一連のプロセスステップに、前記半導体基板を暴露するステップと、
前記領域に、レーザ照射パラメータを有するレーザを照射するステップと
を含む半導体デバイスを製造する方法であって、
前記照射パラメータが前記少なくとも1つのプロセス性能パラメータに基づいて決定されることを特徴とする方法。 - 請求項1に記載の方法において、前記少なくとも1つのプロセス性能パラメータが、寸法的、形態的、あるいは電気的パラメータ、またはそれらの組合せを含むことを特徴とする方法。
- 請求項2に記載の方法において、前記少なくとも1つの性能パラメータが基板内非均一性パラメータを含むことを特徴とする方法。
- 請求項2〜3のいずれか一項に記載の方法において、前記少なくとも1つのプロセス性能パラメータが基板間非均一性パラメータを含むことを特徴とする方法。
- 請求項4に記載の方法において、前記半導体基板の少なくとも2つの領域が照射され、各領域に対して前記照射パラメータが別々に決定されることを特徴とする方法。
- 請求項5に記載の方法において、別々に決定された照射パラメータで各領域を照射する前に、予め共通の照射パラメータで前記各領域を照射することを特徴とする方法。
- 請求項1〜6のいずれか一項に記載の方法において、前記少なくとも1つのプロセス性能パラメータおよび前記照射パラメータが、各領域に対して連続して決定されることを特徴とする方法。
- 請求項1〜6のいずれか一項に記載の方法において、前記少なくとも1つのプロセス性能パラメータの転送されたパターンに基づいて、照射パラメータのパターンが決定されることを特徴とする方法。
- 請求項8に記載の方法において、前記半導体の1つの領域を照射するステップの後に、前記領域において、少なくとも1つのプロセス性能パラメータが決定される1つのプロセスステップまたは一連のプロセスステップに、前記半導体基板を暴露するステップを行い、前記転送されたパターンが前記少なくとも1つのプロセス性能パラメータの推定パターンであることを特徴とする方法。
- 請求項1〜9のいずれか一項に記載の方法において、前記照射パラメータがデバイスCDによって決定されることを特徴とする方法。
- 請求項1〜10のいずれか一項に記載の方法において、前記照射パラメータが、前記領域中で達成されるべきドーパント濃度および活性ドーパント濃度によって決定されることを特徴とする方法。
- 請求項1〜11のいずれか一項に記載の方法において、前記照射パラメータが、前記領域中で達成されるべきひずみおよび緩和の程度によって決定されることを特徴とする方法。
- 請求項1〜12のいずれか一項に記載の方法において、前記照射パラメータが堆積層の厚さによって決定されることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09290949.8 | 2009-12-15 | ||
EP09290949A EP2337066A1 (en) | 2009-12-15 | 2009-12-15 | Method for making a semiconductor device by laser irradiation |
PCT/EP2010/069300 WO2011073082A1 (en) | 2009-12-15 | 2010-12-09 | Method for making a semiconductor device by laser irradiation |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013513959A true JP2013513959A (ja) | 2013-04-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012543619A Pending JP2013513959A (ja) | 2009-12-15 | 2010-12-09 | レーザ照射によって半導体デバイスを製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20130045609A1 (ja) |
EP (2) | EP2337066A1 (ja) |
JP (1) | JP2013513959A (ja) |
KR (1) | KR20120101128A (ja) |
CN (1) | CN102844852B (ja) |
SG (1) | SG10201408257VA (ja) |
TW (1) | TW201137947A (ja) |
WO (1) | WO2011073082A1 (ja) |
Families Citing this family (2)
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JP2013220996A (ja) * | 2012-04-13 | 2013-10-28 | Tosoh Corp | ジチエノベンゾジチオフェン誘導体、ドロップキャスト製膜用溶液および有機半導体層 |
DE102015106979B4 (de) | 2015-05-05 | 2023-01-12 | Infineon Technologies Austria Ag | Halbleiterwafer und Verfahren zum Herstellen von Halbleitervorrichtungen in einem Halbleiterwafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246200A (ja) * | 1996-03-12 | 1997-09-19 | Shin Etsu Handotai Co Ltd | 熱処理方法および輻射加熱装置 |
JP2008066646A (ja) * | 2006-09-11 | 2008-03-21 | Nec Electronics Corp | アニール装置、アニール方法及び半導体装置の製造方法 |
Family Cites Families (11)
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US5696025A (en) * | 1996-02-02 | 1997-12-09 | Micron Technology, Inc. | Method of forming guard ringed schottky diode |
JP3450240B2 (ja) * | 1999-11-25 | 2003-09-22 | Necエレクトロニクス株式会社 | ランプアニール装置とランプアニール装置の処理温度制御方法 |
US6656749B1 (en) * | 2001-12-13 | 2003-12-02 | Advanced Micro Devices, Inc. | In-situ monitoring during laser thermal annealing |
US7211501B2 (en) | 2002-12-12 | 2007-05-01 | Intel Corporation | Method and apparatus for laser annealing |
CN1290154C (zh) * | 2003-07-16 | 2006-12-13 | 友达光电股份有限公司 | 激光结晶系统和控制准分子激光退火制程能量密度的方法 |
DE102004009516B4 (de) * | 2004-02-27 | 2010-04-22 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System zum Steuern eines Produktparameters eines Schaltungselements |
CN100423043C (zh) * | 2004-04-21 | 2008-10-01 | 统宝光电股份有限公司 | 平面显示器面板构造与制造方法 |
US7153711B2 (en) * | 2004-08-12 | 2006-12-26 | Texas Instruments Incorporated | Method for improving a drive current for semiconductor devices on a wafer-by-wafer basis |
US7211481B2 (en) * | 2005-02-18 | 2007-05-01 | Texas Instruments Incorporated | Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer |
CN100362420C (zh) * | 2005-07-27 | 2008-01-16 | 大连理工大学 | 一种利用激光退火提高掺稀土氧化铝薄膜光学特性的方法 |
JP5133574B2 (ja) * | 2007-02-13 | 2013-01-30 | セイコーインスツル株式会社 | 半導体装置のヒューズトリミング方法 |
-
2009
- 2009-12-15 EP EP09290949A patent/EP2337066A1/en not_active Withdrawn
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2010
- 2010-12-09 CN CN201080054230.6A patent/CN102844852B/zh not_active Expired - Fee Related
- 2010-12-09 EP EP10795283A patent/EP2513959A1/en not_active Withdrawn
- 2010-12-09 KR KR1020127018399A patent/KR20120101128A/ko not_active Application Discontinuation
- 2010-12-09 JP JP2012543619A patent/JP2013513959A/ja active Pending
- 2010-12-09 US US13/514,619 patent/US20130045609A1/en not_active Abandoned
- 2010-12-09 WO PCT/EP2010/069300 patent/WO2011073082A1/en active Application Filing
- 2010-12-09 SG SG10201408257VA patent/SG10201408257VA/en unknown
- 2010-12-15 TW TW099144084A patent/TW201137947A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246200A (ja) * | 1996-03-12 | 1997-09-19 | Shin Etsu Handotai Co Ltd | 熱処理方法および輻射加熱装置 |
JP2008066646A (ja) * | 2006-09-11 | 2008-03-21 | Nec Electronics Corp | アニール装置、アニール方法及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102844852B (zh) | 2016-06-08 |
WO2011073082A1 (en) | 2011-06-23 |
US20130045609A1 (en) | 2013-02-21 |
CN102844852A (zh) | 2012-12-26 |
KR20120101128A (ko) | 2012-09-12 |
SG10201408257VA (en) | 2015-01-29 |
EP2337066A1 (en) | 2011-06-22 |
TW201137947A (en) | 2011-11-01 |
EP2513959A1 (en) | 2012-10-24 |
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