JP2013513016A - 可視範囲または近赤外線範囲において光を放出する発光材料および形成方法 - Google Patents
可視範囲または近赤外線範囲において光を放出する発光材料および形成方法 Download PDFInfo
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- 238000000904 thermoluminescence Methods 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical class [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- FSBZGYYPMXSIEE-UHFFFAOYSA-H tin(2+);diphosphate Chemical compound [Sn+2].[Sn+2].[Sn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O FSBZGYYPMXSIEE-UHFFFAOYSA-H 0.000 description 1
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical class [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 1
- GZNAASVAJNXPPW-UHFFFAOYSA-M tin(4+) chloride dihydrate Chemical compound O.O.[Cl-].[Sn+4] GZNAASVAJNXPPW-UHFFFAOYSA-M 0.000 description 1
- KHMOASUYFVRATF-UHFFFAOYSA-J tin(4+);tetrachloride;pentahydrate Chemical compound O.O.O.O.O.Cl[Sn](Cl)(Cl)Cl KHMOASUYFVRATF-UHFFFAOYSA-J 0.000 description 1
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Substances O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005390 triboluminescence Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
本願は、米国仮特許出願第61/267,756号(2009年12月8日出願)の利益を主張し、この出願の開示は、その全体が参照することによって本明細書に援用される。
本発明は、概して、発光材料に関する。より具体的には、本発明は、可視範囲または近赤外線範囲において光を放出する発光材料、およびそのような材料を形成する方法に関する。
[AaSnbXxX’x’X’’x’’][ドーパント]
を有し、式中、
Aは、一価の陽イオンとして発光材料内に含まれ、
X、X’、およびX’’は、フッ素、塩素、臭素、およびヨウ素から選択され、
aは、1から5の範囲内にあり、
bは、1から3の範囲内にあり、
xとx’とx’’との合計は、a+2bであり、
少なくともX’は、x’/(a+2b)≧1/5であるようなヨウ素である。
本明細書において使用されるように、単数形「a」、「an」、および「the」は、文脈によって、別様に明示されない限り、複数参照を含む。したがって、例えば、発光材料の言及は、文脈によって、別様に明示されない限り、複数の発光材料を含むことができる。
本発明の実施形態は、いくつかの望ましい特性を有する発光材料に関する。特に、本発明のいくつかの実施形態による発光材料は、高い量子効率、狭いスペクトル幅、および望ましい波長範囲内に位置するピーク放出波長を有する光ルミネセンスを呈することができる。また、これらの光ルミネセンス特性は、広い範囲の励起波長にわたって比較的に低い感度であることができる。特定の理論によって拘束されるわけではないが、これらの独特のかつ望ましい特性は、少なくとも部分的に発光材料の特定のマイクロ構造から導出することができる。有利には、発光材料は、安価かつ容易に処理し、種々の製品を形成することができ、ひいては、ソーラーモジュールおよび他の用途において使用することができる。
[AaBbXx][ドーパント] (1)
を参照して表すことができる、半導体材料の種類が上げられる。
[AaSnbXx][ドーパント] (2)
を参照して表されるものが挙げられる。
[AaGebXx][ドーパント] (3)
を参照して表されるものが挙げられる。
[CsGeI3][ドーパント] (4)
を参照して表すことができる。
[AaPbbXx][ドーパント] (5)
を参照して表されるものが挙げられる。
[CsPbI3][ドーパント] (6)
を参照して表すことができる。
[AaSnbXxX’x’][ドーパント] (7)
を参照して表されるものが挙げられる。
[CsSnClI2][ドーパント] (8)
[CsSnCl2I][ドーパント] (9)
[CsSn2Cl2I3][ドーパント] (10)
[CsSn2Cl3I2][ドーパント] (11)
[CsSn2ClI4][ドーパント] (12)
[CsSn2Cl4I][ドーパント] (13)
[Cs2SnClI3][ドーパント] (14)
[Cs2SnCl2I2][ドーパント] (15)
[Cs2SnCl3I][ドーパント] (16)
のうちの1つを参照して表すことができる。
また、例えば、Aが、セシウムであって、Xが、臭素であって、X’が、ヨウ素である場合、発光材料は、時として、式:
[CsSnBrI2][ドーパント] (17)
[CsSnBr2I][ドーパント] (18)
[CsSn2Br2I3][ドーパント] (19)
[CsSn2Br3I2][ドーパント] (20)
[CsSn2BrI4][ドーパント] (21)
[CsSn2Br4I][ドーパント] (22)
[Cs2SnBrI3][ドーパント] (23)
[Cs2SnBr2I2][ドーパント] (24)
[Cs2SnBr3I][ドーパント] (25)
のうちの1つを参照して表すことができる。
また、例えば、Aが、セシウムであって、Xが、フッ素であって、X’が、ヨウ素である場合、発光材料は、時として、式:
[CsSnFI2][ドーパント] (26)
[CsSnF2I][ドーパント] (27)
[CsSn2F2I3][ドーパント] (28)
[CsSn2F3I2][ドーパント] (29)
[CsSn2FI4][ドーパント] (30)
[CsSn2F4I][ドーパント] (31)
[Cs2SnFI3][ドーパント] (32)
[Cs2SnF2I2][ドーパント] (33)
[Cs2SnF3I][ドーパント] (34)
のうちの1つを参照して表すことができる。
[AaSnbXxX’x’X’’x’’][ドーパント] (35)
を参照して表されるものが挙げられる。
[CsSnClIBr][ドーパント] (36)
[CsSn2ClIx’Br4−x’][ドーパント]、x’=1、2、または3 (37)
[CsSn2Cl2Ix’Br3−x’][ドーパント]、x’=1または2 (38)
[CsSn2Cl3IBr][ドーパント] (39)
[Cs2SnClIx’Br3−x’][ドーパント]、x’=1または2 (40)
[Cs2SnCl2IBr][ドーパント] (41)
のうちの1つを参照して表すことができる。
また、例えば、Aが、セシウムであって、Xが、塩素であって、X’が、ヨウ素であって、X’’が、フッ素である場合、発光材料は、時として、式:
[CsSnClIF][ドーパント] (42)
[CsSn2ClIx’F4−x’][ドーパント]、x’=1、2、または3 (43)
[CsSn2Cl2Ix’F3−x’][ドーパント]、x’=1または2 (44)
[CsSn2Cl3IF][ドーパント] (45)
[Cs2SnClIx’F3−x’][ドーパント]、x’=1または2 (46)
[Cs2SnCl2IF][ドーパント] (47)
のうちの1つを参照して表すことができる。
式(1)によって表される発光材料は、高い収率ならびに適度な温度および圧力において、反応物または前駆体集合の反応を介して形成することができる。反応は、式:
源(B)+源(A、X) → 発光材料 (48)
を参照して表すことができる。
BY2+AX → 発光材料 (49)
を参照して表されるものが挙げられる。
図9は、本発明のある実施形態に従って実装される、ソーラーモジュール900を例示する。ソーラーモジュール900は、結晶シリコンから形成されるp−n接合素子であるPV電池902を含む。しかしながら、PV電池902はまた、別の好適な光活性材料から形成することができる。図9に例示されるように、PV電池902は、結晶シリコンの薄いスライスまたは細片として実装される。シリコンの薄いスライスの使用は、シリコン消費を低減可能にし、ひいては、製造コストの削減を可能にする。マイクロ機械加工作業をシリコンウエハ上において行い、多数のシリコンスライスを形成することができ、シリコンスライスはそれぞれ、PV電池902等のPV電池を形成するように、さらに処理されることができる。図9に例示されるように、PV電池902は、PV電池902の側面904に入射する放射を受容および吸収するように構成されるが、他のPV電池902の表面もまた、関与することができる。
以下の実施例は、本発明のいくつかの実施形態の具体的側面を説明し、当業者に説明を例示および提供する。実施例は、単に、本発明のいくつかの実施形態の理解および実践において有用である特定の方法論を提供するので、実施例は、本発明を限定するものとして解釈されるべきではない。
(発光材料の形成−UD930)
UD930のサンプルを、2つのアプローチに従って、真空蒸着によって再現可能な様式で形成した。一方のアプローチに従って、ヨウ化錫(II)およびヨウ化セシウム(I)を、連続層、典型的には、合計最大6つの層内に蒸着した。別のアプローチに従って、塩化錫(II)およびヨウ化セシウム(I)を、連続層、典型的には、合計最大6つの層内に蒸着した。あるサンプルの場合、塩化錫(II)含有層の厚さは、約90nmであって、ヨウ化セシウム(I)含有層の厚さは、約170nmであった。ヨウ化錫(II)(または、塩化錫(II))を、熱蒸発によって蒸着した一方、ヨウ化セシウム(I)を、電子ビーム蒸着によって蒸着した。蒸着は、ガラス、セラミック、およびシリコンから形成されるものを含め、種々の基板上において、圧力約10−5トル(または、それ以下)で実行した。
(発光材料の特性−UD930)
図11(a)は、本発明のある実施形態に従って、12Kから300Kの範囲内の温度において、UD930に対して観察された励起スペクトルを例示し、図11(b)は、同一温度範囲内において、UD930に対して得られた放出スペクトルを例示する。理解され得るように、温度に有するピーク位置の変動は、励起および放出スペクトルに対して類似する。
Claims (22)
- 発光材料であって、該発光材料は、式:
[AaSnbXxX’x’X’’x’’][ドーパント]
を有し、式中、
Aは、一価の陽イオンとして該発光材料内に含まれ、
X、X’、およびX’’は、フッ素、塩素、臭素、およびヨウ素から選択され、
aは、1から5までの範囲内にあり、
bは、1から3までの範囲内にあり、
xとx’とx’’との合計は、a+2bであり、
少なくともX’は、x’/(a+2b)≧1/5であるようなヨウ素である、発光材料。 - Aは、カリウム、ルビジウム、およびセシウムから選択される、請求項1に記載の発光材料。
- Aは、セシウムであり、aは、1または2である、請求項1に記載の発光材料。
- bは、1または2である、請求項1に記載の発光材料。
- XおよびX’’のうちの少なくとも1つは、フッ素である、請求項1に記載の発光材料。
- XおよびX’’のうちの少なくとも1つは、塩素である、請求項1に記載の発光材料。
- XおよびX’’のうちの少なくとも1つは、臭素である、請求項1に記載の発光材料。
- x’/(a+2b)≧1/2である、請求項1に記載の発光材料。
- x’/(a+2b)≧2/3である、請求項1に記載の発光材料。
- aは、1であり、bは、1である、請求項1に記載の発光材料。
- aは、1であり、bは、2である、請求項1に記載の発光材料。
- aは、2であり、bは、1である、請求項1に記載の発光材料。
- 前記ドーパントは、元素組成に関して、5%未満の量で前記発光材料内に含まれる、請求項1に記載の発光材料。
- 前記ドーパントは、元素組成に関して、0.1%から1%までの範囲内の量で前記発光材料内に含まれる、請求項1に記載の発光材料。
- 前記ドーパントは、酸素を含む陰イオンを含む、請求項1に記載の発光材料。
- 前記陰イオンは、O−2およびOH−1のうちの少なくとも1つを含む、請求項14に記載の発光材料。
- 発光材料を形成する方法であって、
AおよびXの源を提供することであって、Aは、IA族元素のうちの少なくとも1つから選択され、Xは、VIIB族元素のうちの少なくとも1つから選択される、ことと、
Bの源を提供することであって、Bは、IVB族元素のうちの少なくとも1つから選択される、ことと、
該AおよびXの源ならびに該Bの源を真空蒸着に曝して、基板に隣接した薄膜集合を形成することと、
該薄膜集合を温度Theatまで加熱して、該基板に隣接した発光材料を形成することであって、該発光材料は、A、B、およびXを含み、該AおよびXの源ならびに該Bの源のうちの1つは、より低い融点Tm1を有し、該AおよびXの源ならびに該Bの源のうちの別の1つは、より高い融点Tm2を有し、Tm1<Theat<Tm2である、ことと
を含む、方法。 - Tm1<Theat<(Tm1+3Tm2)/4である、請求項17に記載の方法。
- Tm1<Theat<(Tm1+Tm2)/2である、請求項17に記載の方法。
- 前記AおよびXの源は、式AXを有する化合物を含み、前記Bの源は、式BY2を有する化合物を含み、Yは、VIIB族元素のうちの少なくとも1つから選択される、請求項17に記載の方法。
- 前記AおよびXの源ならびに前記Bの源を真空蒸着に曝すことは、
該AおよびXの源を電子ビーム蒸着および熱蒸発のうちの少なくとも1つに曝すことと、
該Bの源を熱蒸発に曝すことと
を含む、請求項17に記載の方法。 - 前記AおよびXの源ならびに前記Bの源を真空蒸着に曝すことは、
該AおよびXの源ならびに該Bの源を混合して、混合物を形成することと、
該混合物を真空蒸着に曝して、前記基板に隣接した薄膜集合を形成することと
を含む、請求項17に記載の方法。
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US26775609P | 2009-12-08 | 2009-12-08 | |
US61/267,756 | 2009-12-08 | ||
PCT/US2010/058669 WO2011071738A2 (en) | 2009-12-08 | 2010-12-02 | Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof |
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JP2012543157A Pending JP2013513016A (ja) | 2009-12-08 | 2010-12-02 | 可視範囲または近赤外線範囲において光を放出する発光材料および形成方法 |
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US (4) | US20110180757A1 (ja) |
EP (1) | EP2510073B1 (ja) |
JP (1) | JP2013513016A (ja) |
ES (1) | ES2648256T3 (ja) |
WO (1) | WO2011071738A2 (ja) |
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US20140199800A1 (en) | 2014-07-17 |
WO2011071738A3 (en) | 2011-11-17 |
US20130214205A1 (en) | 2013-08-22 |
US8734681B2 (en) | 2014-05-27 |
EP2510073A4 (en) | 2014-09-24 |
US20110180757A1 (en) | 2011-07-28 |
WO2011071738A2 (en) | 2011-06-16 |
US9660111B2 (en) | 2017-05-23 |
EP2510073B1 (en) | 2017-07-05 |
US20130217170A1 (en) | 2013-08-22 |
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EP2510073A2 (en) | 2012-10-17 |
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