JP2013512985A - ピレン化合物の導入された伝導性高分子及びそれを用いた有機太陽電池 - Google Patents
ピレン化合物の導入された伝導性高分子及びそれを用いた有機太陽電池 Download PDFInfo
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- JP2013512985A JP2013512985A JP2012541930A JP2012541930A JP2013512985A JP 2013512985 A JP2013512985 A JP 2013512985A JP 2012541930 A JP2012541930 A JP 2012541930A JP 2012541930 A JP2012541930 A JP 2012541930A JP 2013512985 A JP2013512985 A JP 2013512985A
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Abstract
Description
前記スズキ法によって合成された実施例1〜3及び比較例1〜3のピレン基を含む伝導性高分子を電子供与体として使用し、C70−PCBMを電子受容体として使用するが、その配合比を1:3重量比で混合して製造された光電変換層の材料をクロロベンゼン溶媒に1.5%の重量比で含まれるように溶解させた後、アルゴン雰囲気下でPEDOT層の導入されたITOガラス基板にスピンコーティングして60〜120nmの厚さを有する光電変換層を導入し、120℃の熱板で5分間熱処理した。次いで、10−7torr以下の真空度を有する真空チャンバでLiF 0.6nmとアルミニウム100〜200nmを順次に熱蒸着して有機太陽電池を製造した。
下記反応式1に示すように、製造された実施例1〜3及び比較例1〜3の高分子とC70−PCBMを1:3重量比で混合して光電変換層の材料を製造し、それを用いた有機太陽電池に対して、電気光学的特性の結果を下記表1に示す。
反応フラスコに4,4’−ビス(2−エチル−ヘキシル)−5,5’−ビス(トリメチルシリル)−ジチエノシロール(4,4’−bis(2−ethyl−hexyl)−5,5’−bis(trimethylsilyl)−dithieno[3,2−b:2’,3’−d]silole)0.325g(0.436mmol)、4,7−ブロモ−2,1,3−ベンゾチアジアゾール0.122g(0.414mmol)、1,6−ジブロモピレン0.00784g(0.0218mmol)及びトルエン2mlを入れた後、10分間窒素でバブリングして、溶媒中に溶解している溶存酸素を除去した。窒素を流しつつPd2(dba)3 11.8mg(0.0129mmol)及びP(o−tolyl)3 11.7mg(0.0386mmol)を入れてさらに5分間窒素でバブリングした。窒素雰囲気で外部のオイル・バスの温度を120℃に維持して2日間還流させた。トリブチルフェニルスズ(Tributhylphenyl tin)0.05gを入れて3時間反応させた後、ブロモベンゼン0.12gを入れ、さらに4時間反応させた。反応溶液を300mlのメタノールに落として得られた未精製の固体高分子をメタノールで24時間ソックスレーを利用して洗浄した。溶媒をクロロホルムに変えて高分子を溶解させた後、最小量の溶媒のみを残して蒸発させ、300mlのメタノールに沈澱させた。固体を濾過した後、溶媒を除去し、さらに最小量のクロロホルムに溶解させた後、300mlのメタノールに再沈澱させて濾過し、真空下で乾燥して高分子−8 130mgを得た[Mw=67,000g/mol(PDI=1.8)]。
反応フラスコに4,4’−ビス(2−エチル−ヘキシル)−5,5’−ビス(トリメチルシリル)−ジチエノシロール0.325g(0.436mmol)、4,7−ブロモ−2,1,3−ベンゾチアジアゾール0.180g(0.392mmol)、1,6−ジブロモピレン0.0157g(0.0436mmol)及びトルエン2mlを入れた後、10分間窒素でバブリングして、溶媒中に溶解している溶存酸素を除去した。
反応フラスコに4,4’−ビス(2−エチル−ヘキシル)−5,5’−ビス(トリメチルシリル−ジチエノシロール0.325g(0.436mmol)、4,7−ブロモ−2,1,3−ベンゾチアジアゾール0.200g(0.436mmol)及びトルエン2mlを入れた後、10分間窒素でバブリングして、溶媒中に溶解している溶存酸素を除去した。
前記スティーリー方法によって合成された実施例5〜6及び比較例4のピレン基を含む伝導性高分子を電子供与体として使用し、C70−PCBMを電子受容体として使用するが、その配合比を1:3重量比で混合して製造された光電変換層の材料をクロロベンゼン溶媒に1.5%の重量比で含まれるように溶解させた後、前記実施例4と同様の方法で有機太陽電池を製造した。
下記反応式2に示すように、製造された実施例5〜6及び比較例4の高分子とC70−PCBMを1:3重量比で混合して光電変換層の材料を製造し、それを用いた有機太陽電池に対して、電気光学的特性の結果を下記表2に示す。
反応フラスコにステップ1で製造された2,5−ビス(5−ブロモ−3−ヘキシルチオフェン−2−イル)−チアゾロ[5,4−d]チアゾール0.253g(0.400mmol)と、ステップ2で製造された2,7−ビス(4’,4’,5’,5’−テトラメチル−1’,3’,2’−ジオキサボロラン−2’−イル)−N−9”−ヘプタデカニルカルバゾール0.263g(0.400mmol)を入れて1時間真空状態を維持した後、トルエン4mlを入れて30分間撹拌した。20重量%のEt4NOH 1.296gを添加した後、窒素でバブリングして、溶媒中に溶解している溶存酸素を除去した。
前記スズキ方法によって、前記実施例8及び比較例5で製造された高分子を電子供与体として使用し、C70−PCBMを電子受容体として使用するが、その配合比を1:3重量比で混合して製造された光電変換層の材料をクロロベンゼン溶媒に1.5%の重量比で含まれるように溶解させた後、アルゴン雰囲気下でPEDOT層の導入されたITOガラス基板にスピンコーティングして70〜120nmの厚さを有する光電変換層を導入し、120℃の熱板で5分間熱処理した。
前記実施例8及び比較例5で製造された高分子とC70−PCBMを1:3重量比で混合して光電変換層の材料を製造し、それを用いた有機太陽電池素子に対して電気光学的特性の結果を下記表4に示す。
前記実施例8及び比較例5で製造された高分子とC70−PCBMを1:3重量比で混合して光電変換層の材料を製造し、それを用いた有機太陽電池素子に対して電気光学的特性の結果を下記表3に示す。
Claims (12)
- 前記XまたはYのうち何れか一方がドナー単量体の構造を有し、他方がアクセプター単量体の構造を有することを特徴とする請求項1に記載の前記ピレン化合物の導入された伝導性高分子。
- 前記光電変換層が化学式1で示されるピレン化合物の導入された伝導性高分子の電子供与体と、C60のフラーレン誘導体またはC70のフラーレン誘導体の電子受容体が1:0.5〜1:4の重量比で配合された光電変換物質からなることを特徴とする請求項8に記載の前記有機太陽電池。
- 前記光電変換物質を含む溶液は、クロロベンゼン、1,2−ジクロロベンゼン及びクロロホルムからなる群から選択される何れか一つの溶媒に光電変換物質1.0ないし3.0重量%が溶解されたことを特徴とする請求項8に記載の前記有機太陽電池。
- 前記光電変換物質が溶解された溶液は、インクジェットプリンティング法、スピンコーティング法、スクリーン印刷法及びドクターブレード法から選択される何れか一つの方法で塗布またはコーティングされることを特徴とする請求項8に記載の前記有機太陽電池。
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US9634259B2 (en) | 2014-03-11 | 2017-04-25 | Samsung Display Co., Ltd. | Condensed cyclic compound and organic light-emitting device including the same |
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CN103415589B (zh) | 2011-10-05 | 2016-08-10 | 日东电工株式会社 | 具有提高日光采集效率的压敏粘附层的波长转换膜 |
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