JP2013506289A - 酸素拡散バリア層を有する半導体デバイスおよびそれを製造するための方法 - Google Patents
酸素拡散バリア層を有する半導体デバイスおよびそれを製造するための方法 Download PDFInfo
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Abstract
Description
装置は一実施形態にしたがったトランジスタのために提供される。トランジスタが半導体材料上にゲートスタックを備える。ゲートスタックが、半導体材料上に堆積される酸化物層、該堆積された酸化物層上にある酸素拡散バリア層、酸素拡散バリア層上に配置された高誘電率の誘電体層、および高誘電率の誘電体層上に配置された酸素ゲッター導電性層を備える。酸素拡散バリア層が酸素の拡散を防止する。一実施形態にしたがって、堆積された酸化物層が少なくとも1ナノメートルの厚さを有する。さらなる実施形態において、堆積される酸化物層が、半導体材料上に堆積される二酸化ケイ素の層を備える。別の実施形態において、酸素拡散バリア層が0.1nmと1.5nmとの間の厚さを有する。別の実施形態にしたがって、酸素拡散バリア層が、窒化アルミニウム、窒化ケイ素、窒化ゲルマニウムからなる群から選択される材料の層を備える。別のさらなる実施形態にしたがって、酸素ゲッター導電性層が金属を備える。別の実施形態において、酸素ゲッター導電性層が、窒化チタン、窒化タンタラム、窒化タングステンからなる群から選択される材料を備える。一実施形態にしたがって、半導体材料が高移動度材料を含み、堆積された酸化物層は、高移動度材料上に堆積されている。
Claims (20)
- 半導体材料上に配置されるゲートスタックを有するトランジスタであって、
前記半導体材料上に配置されるように堆積された酸化物層と、
前記堆積された酸化物層上に配置された酸素拡散バリア層であって、前記酸素拡散バリア層が酸素の拡散を防止する、前記酸素拡散バリア層と、
前記酸素拡散バリア層上に配置された高誘電率の誘電体層と、
前記高誘電率の誘電体層上に配置された酸素ゲッター導電性層とを備える、トランジスタ。 - 前記堆積された酸化物層が、少なくとも1ナノメートルの厚さを有する、請求項1に記載のトランジスタ。
- 前記堆積された酸化物層が、前記半導体材料上に堆積された二酸化ケイ素の層を含む、請求項2に記載のトランジスタ。
- 前記酸素拡散バリア層が、0.1ナノメートルと0.5ナノメートルとの間の厚さを有する、請求項1に記載のトランジスタ。
- 前記酸素拡散バリア層が、窒化アルミニウム、窒化シリコン、四窒化三ゲルマニウムからなる群から選択される材料を含む、請求項1に記載のトランジスタ。
- 前記酸素ゲッター導電性層が、金属を含む、請求項1に記載のトランジスタ。
- 前記酸素ゲッター導電性層が、窒化チタン、窒化タンタル、および窒化タングステンからなる群から選択される材料を含む、請求項1に記載のトランジスタ。
- 前記半導体材料が、高移動度材料を含み、前記堆積された酸化物層は前記高移動度材料上に堆積される、請求項1に記載のトランジスタ。
- トランジスタを製造するための方法であって、
半導体材料の層上に配置されるように酸化物層を堆積すること、
前記酸化物層上に配置されるように酸素拡散バリア層を形成すること、
前記酸素拡散バリア層上に配置されるように高誘電率の誘電体材料の層を形成すること、
前記高誘電率の誘電体字材料の層上に配置されるように導電性材料の層を形成すること、
前記導電性材料の層、高誘電率の誘電体材料の層、酸素拡散バリア層、および酸化物層の一部分を選択的に除去して、ゲートスタックを形成すること、
前記ゲートスタック周りにソースおよびドレイン領域を形成することを備える、方法。 - 前記酸化物層を堆積することが、700℃と1000℃との間の温度において酸化物材料を堆積することを含む、請求項9に記載の方法。
- 前記酸化物材料を堆積することが、少なくとも1ナノメートルの厚さの酸化物材料を堆積することを含む、請求項10に記載の方法。
- 前記半導体材料の層が、高移動度材料の層を含み、前記酸化物材料は前記高移動度材料上に堆積される、請求項10に記載の方法。
- 前記酸素拡散バリア層を形成することが、窒化シリコン、窒化アルミニウム、および四窒化三ゲルマニウムからなる群から選択された材料の層を形成することを含む、請求項10に記載の方法。
- 前記導電性材料の層を形成することが、金属層を形成することを含む、請求項13に記載の方法。
- 前記高誘電率の誘電体材料の層上に配置されるようにキャップ層を形成することをさらに備え、
前記導電性材料の層、前記高誘電率の誘電体材料の層、前記酸素拡散バリア層、および前記酸化物層の一部分を選択的に除去し、さらにキャップ層の一部分を選択的に除去する、請求項14に記載の方法。 - 第1トランジスタおよび第2トランジスタを含む半導体デバイスを製造する方法であって、
半導体材料の第1領域および半導体材料の第2領域を有する半導体デバイス構造を提供すること、
前記第1領域および前記第2領域上に配置されるように第1酸化物層を堆積することであって、前記第1酸化物層が第1の厚さを有する、前記第1酸化物層を堆積すること、
前記第1酸化物層上に配置されるように酸素拡散バリア層を形成すること、
前記酸素拡散バリア層および前記第1領域上に配置された前記第1酸化物層を完全に残して、前記第2領域上に配置された第1酸化物層および前記酸素拡散バリア層を除去すること、
前記第2領域上に配置されるように誘電体層を形成することであって、前記誘電体層が第2の厚さを有し、前記第2の厚さは前記第1の厚さ未満である、前記誘電体層を形成すること、
前記第1領域の前記酸素拡散バリア層および前記第2領域の前記誘電体層上に配置されるように高誘電率の誘電体材料の層を形成すること、
前記高誘電率の誘電体材料上に配置されるように導電性材料の層を形成すること、
前記第1領域上に配置された前記導電性材料の層、前記高誘電率の誘電体材料の層、前記酸素拡散バリア層、および前記第1酸化物層の一部分を選択的に除去して、前記第1トランジスタの第1ゲートスタックを形成すること、
前記第2領域上に配置された前記導電性材料の層、前記高誘電率の誘電体材料の層、前記誘電体材料の一部分を選択的に除去して、前記第2トランジスタの第2ゲートスタックを形成することを含む、方法。 - 前記第1トランジスタがI/Oトランジスタを含み、前記第2トランジスタが論理トランジスタを含む、請求項16に記載の方法。
- 前記誘電体層を形成することが、第2酸化物層を成長させることを含む、請求項16に記載の方法。
- 前記第2酸化物層を成長させることが、酸化物質を用いて前記半導体デバイスの化学洗浄を実行することを含む、請求項16に記載の方法。
- 前記半導体材料の前記第1領域が、高移動度材料を含み、前記第1酸化物層は前記高移動度材料上に堆積される、請求項16に記載の方法。
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