JP2013504214A - 半導体レーザを駆動し冷却する方法及びシステム - Google Patents
半導体レーザを駆動し冷却する方法及びシステム Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 238000001816 cooling Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 24
- 239000003990 capacitor Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 3
- 239000012809 cooling fluid Substances 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 description 15
- 230000008901 benefit Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
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- 238000004146 energy storage Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【選択図】 図1
Description
[0002]アメリカ合衆国政府は、アメリカ合衆国エネルギー省とローレンス リバモア ナショナル セキュリティLCCとの間の契約第DE−AC52−07NA27344号に準拠した本発明の権利を有する。
さらに、図1のパワーエレクトロニクス120によって表された電気パルス発振器は、ダイオードレーザタイル100に熱的に接合される。図1に示すように、電気パルス発振器の1つ又は複数の構成要素(例えば、ダイ形式のFET及び検知抵抗器)は、取付台の第2の側面に取り付けられる。冷却アセンブリ130によって表された冷却構造は、ダイオードレーザタイル及び電気パルス発振器に熱的に接合される。
Claims (20)
- 第1の側面及び前記第1の側面の反対側に位置する第2の側面を有する取付台と、前記取付台の前記第1の側面に接合された半導体レーザポンプアレイとを備えるダイオードレーザタイルと、
前記ダイオードレーザタイルに熱的に接合された電気パルス発振器と、
前記ダイオードレーザタイル及び前記電気パルス発振器に熱的に接合された冷却構造と
を具備する、半導体レーザシステム。 - 前記取付台が、前記第1の側面と前記第2の側面との間に配置された第3の側面を備える、請求項1に記載の半導体レーザシステム。
- 前記電気パルス発振器の少なくとも1つの構成要素が、前記第3の側面に取り付けられる、請求項1に記載の半導体レーザシステム。
- 前記半導体レーザポンプアレイの各半導体レーザポンプが、半導体レーザアレイを備える、請求項1に記載の半導体レーザシステム。
- 前記半導体レーザポンプアレイに接合された複数のレンズレットアレイをさらに備える、請求項1に記載の半導体レーザシステム。
- 前記電気パルス発振器の少なくとも1つの構成要素が、前記取付台の前記第2の側面に取り付けられる、請求項1に記載の半導体レーザシステム。
- 前記少なくとも1つの構成要素が、ダイ形式のFET及び検知抵抗器を備える、請求項6に記載の半導体レーザシステム。
- 半導体レーザ光源と、
前記半導体レーザ光源に熱的に接合されたヒートシンクと、
前記ヒートシンクに熱的に接合されたパルス発振器であって、電源に接続された検知抵抗器、及び接地している電界効果トランジスタを備えるパルス発振器と
を具備する、半導体レーザポンプ装置。 - 前記半導体レーザ光源が、半導体レーザバーアレイを備える、請求項8に記載の半導体レーザポンプ装置。
- 前記半導体レーザバーが、半導体レーザアレイを備える、請求項9に記載の半導体レーザポンプ装置。
- 前記ヒートシンクが、冷却用流体と熱連通している、請求項8に記載の半導体レーザポンプ装置。
- 前記検知抵抗器の第1の端部が、電流検知増幅器の第1の端子に接続されている、請求項8に記載の半導体レーザポンプ装置。
- 前記検知抵抗器の第2の端部が、前記電流検知増幅器の第2の端子に接続されている、請求項12に記載の半導体レーザポンプ装置。
- 前記電界効果トランジスタが、ダイ形式で取り付けられている、請求項8に記載の半導体レーザポンプ装置。
- 前記電源が、DC電源を含む、請求項8に記載の半導体レーザポンプ装置。
- 前記DC電源に接合されたコンデンサをさらに備える、請求項15に記載の半導体レーザポンプ装置。
- 半導体レーザポンプ装置を作動させる方法であって、
電荷蓄積コンデンサ及び電力バスにDC電力を印加するステップと、
電流制御FETに接続された駆動増幅器に電流パルスを印加するステップと、
前記駆動増幅器への前記電流パルスの印加に応答して、前記電流制御FETを介して電流を流すステップと、
前記電力バスに接続された検知抵抗器を介して前記電流を流すステップと、
前記検知抵抗器の第1の端子及び前記検知抵抗器の第2の端子に接合された検知増幅器を使用して前記電流を検知するステップと、
半導体レーザアレイを介して前記電流を流すことによりポンプ光を発生させるステップとを含む、方法。 - 前記電流制御FET及び前記検知抵抗器が、ヒートシンクに熱的に接合される、請求項17に記載の方法。
- 前記半導体レーザアレイが、前記ヒートシンクに熱的に接合される、請求項18に記載の方法。
- 前記電流制御FETの1つの端子が接地されている、請求項17に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US23956909P | 2009-09-03 | 2009-09-03 | |
US61/239,569 | 2009-09-03 | ||
US12/813,662 US8660156B2 (en) | 2009-09-03 | 2010-06-11 | Method and system for powering and cooling semiconductor lasers |
US12/813,662 | 2010-06-11 | ||
PCT/US2010/047719 WO2011028932A1 (en) | 2009-09-03 | 2010-09-02 | Method and system for powering and cooling semiconductor lasers |
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JP2013504214A true JP2013504214A (ja) | 2013-02-04 |
JP5740685B2 JP5740685B2 (ja) | 2015-06-24 |
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JP2012528057A Active JP5740685B2 (ja) | 2009-09-03 | 2010-09-02 | 半導体レーザを駆動し冷却する方法及びシステム |
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US (1) | US8660156B2 (ja) |
EP (1) | EP2462665B1 (ja) |
JP (1) | JP5740685B2 (ja) |
KR (1) | KR101721282B1 (ja) |
CN (1) | CN102640368A (ja) |
CA (1) | CA2772710C (ja) |
IN (1) | IN2012DN02236A (ja) |
RU (1) | RU2012112805A (ja) |
WO (1) | WO2011028932A1 (ja) |
Cited By (1)
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KR102033200B1 (ko) * | 2012-05-30 | 2019-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열 처리를 위한 장치 및 방법 |
WO2014134340A1 (en) * | 2013-02-28 | 2014-09-04 | Lawrence Livermore National Security, Llc | Compact high current, high efficiency laser diode driver |
JP6246397B2 (ja) | 2015-01-29 | 2017-12-13 | 三菱電機株式会社 | 光源装置 |
DE102015203269A1 (de) * | 2015-02-24 | 2016-08-25 | Siemens Aktiengesellschaft | Speichersystem zum Speichern elektrischer Energie |
US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
US10511142B2 (en) * | 2017-05-03 | 2019-12-17 | Analog Modules, Inc. | Pulsed laser diode drivers and methods |
FR3068463B1 (fr) | 2017-06-30 | 2019-07-26 | Continental Automotive France | Capteur en courant |
WO2020036998A1 (en) | 2018-08-13 | 2020-02-20 | Lasertel, Inc. | Use of metal-core printed circuit board (pcb) for generation of ultra-narrow, high-current pulse driver |
DE102019121924A1 (de) * | 2018-08-14 | 2020-02-20 | Lasertel, Inc. | Laserbaugruppe und zugehörige verfahren |
US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
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RU2012112805A (ru) | 2013-10-10 |
EP2462665A4 (en) | 2017-08-09 |
US20110051759A1 (en) | 2011-03-03 |
CA2772710C (en) | 2018-08-07 |
IN2012DN02236A (ja) | 2015-08-21 |
EP2462665A1 (en) | 2012-06-13 |
CA2772710A1 (en) | 2011-03-10 |
US8660156B2 (en) | 2014-02-25 |
WO2011028932A1 (en) | 2011-03-10 |
KR101721282B1 (ko) | 2017-03-29 |
KR20120099004A (ko) | 2012-09-06 |
EP2462665B1 (en) | 2021-11-03 |
CN102640368A (zh) | 2012-08-15 |
JP5740685B2 (ja) | 2015-06-24 |
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