JP2016512652A - コンパクトな高電流高効率レーザダイオードドライバ - Google Patents
コンパクトな高電流高効率レーザダイオードドライバ Download PDFInfo
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- JP2016512652A JP2016512652A JP2015560324A JP2015560324A JP2016512652A JP 2016512652 A JP2016512652 A JP 2016512652A JP 2015560324 A JP2015560324 A JP 2015560324A JP 2015560324 A JP2015560324 A JP 2015560324A JP 2016512652 A JP2016512652 A JP 2016512652A
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- 239000003990 capacitor Substances 0.000 claims abstract description 54
- 238000012546 transfer Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims description 19
- 239000012809 cooling fluid Substances 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 description 10
- 239000000498 cooling water Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
- G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06832—Stabilising during amplitude modulation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
[0001]本出願は、2013日2月28日出願の「コンパクトな高電流高効率レーザダイオードドライバ」と題された米国仮特許出願61/770,870号に基づく優先権を主張し、すべての目的においてその開示のすべてが参考として本明細書に組み込まれる。
[0002]合衆国政府は、合衆国エネルギー省(U.S. Department of Energy)と、ローレンス リバモア国立研究所(Lawrence Livermore National Laboratory)の運営を目的とするローレンス リバモア ナショナル セキュリティー社(Lawrence Livermore National Security, LCC)との間でなされた契約番号DE−AC52−07NA27344に従い、この発明における権利を有する。
Claims (18)
- u字溝形部材と、
複数のコンデンサを含むプリント回路基板であって、前記複数のコンデンサの各々が、該プリント回路基板に取り付けられた取付面、および前記取付面の反対側に位置し、前記u字溝形部材に熱的に結合された伝熱面を有する、前記プリント回路基板と、
前記プリント回路基板に結合された出力ケーブルと、
前記プリント回路基板に結合されたリターンケーブルと、
前記u字溝形部材内に配置された制御トランジスタと、
前記u字溝形部材内に配置された電流検出抵抗器と、
を備える装置。 - 前記u字溝形部材は、長手方向を有している、請求項1に記載の装置。
- 前記複数のコンデンサは、前記長手方向に配列されている、請求項2に記載の装置。
- 前記プリント回路基板は、取付具を受け入れることが可能な複数の貫通孔を含み、前記取付具は、前記u字溝形部材に取り付けられると、前記複数のコンデンサの前記伝熱面と前記u字溝形部材との間に圧力を加える、請求項1に記載の装置。
- 前記複数のコンデンサの前記伝熱面は、前記u字溝形部材に電気的に接地されている、請求項1に記載の装置。
- 前記出力ケーブルおよび前記リターンケーブルは、一つの同軸ケーブル内に集約されている、請求項1に記載の装置。
- 前記複数のコンデンサの前記伝熱面と前記u字溝形部材との間に配置された熱伝導グリスを更に備える、請求項1に記載の装置。
- 前記u字溝形部材に取り付けられた蓋を更に備える、請求項1に記載の装置。
- エンクロージャと、
前記エンクロージャ内に設置され、互いに所定の距離だけ離間している複数の冷却板と、
前記複数の冷却板の各々に結合された冷却用流体供給手段と、
前記複数の冷却板の各々に結合された流体返戻手段と、
複数のレーザダイオードドライバであって、その各々が、
底面を有するu字溝形部材と、
前記u字溝形部材の前記底面に取り付けられた複数のコンデンサと、
前記u字溝形部材内に配置された制御トランジスタと、
前記u字溝形部材内に配置された電流検出抵抗器と、
を含む、複数のレーザダイオードドライバと、
前記u字溝形部材に取り付けられた蓋と、
を備え、
前記複数のレーザダイオードドライバの各々は、前記複数の冷却板の一つに熱的に接触している前記u字溝形部材の前記底面を有する、
レーザ駆動ユニット。 - 一組のレーザダイオードドライバが、互いに隣接して配置され、前記複数の冷却板の一つに熱的に接触している、請求項9に記載のレーザ駆動ユニット。
- 前記複数のレーザダイオードドライバの各々は、出力ケーブルおよびリターンケーブルを更に備える、請求項9に記載のレーザ駆動ユニット。
- 前記出力ケーブルおよび前記リターンケーブルは、単一の同軸ケーブル内に設けられている、請求項11に記載のレーザ駆動ユニット。
- 前記u字溝形部材は、長手方向を有している、請求項11に記載のレーザ駆動ユニット。
- 前記複数のコンデンサは、前記長手方向に配列されている、請求項13に記載のレーザ駆動ユニット。
- 前記複数のレーザダイオードドライバの各々は、取付具を受け入れることが可能な複数の貫通孔を有するプリント回路基板を更に備え、前記取付具は、前記u字溝形部材に取り付けられると、前記u字溝形部材の前記底面に取り付けられた前記複数のコンデンサに圧力を加える、請求項11に記載のレーザ駆動ユニット。
- 前記複数のコンデンサは、前記u字溝形部材に電気的に接地されている、請求項11に記載のレーザ駆動ユニット。
- 前記複数のコンデンサと前記u字溝形部材の前記底面との間に配置された熱伝導グリスを更に備える、請求項11に記載のレーザ駆動ユニット。
- 前記複数のレーザダイオードの各々は、前記u字溝形部材の前記底面に対して垂直な方向において測定される高さを有しており、前記所定の距離は、前記高さの約2倍である、請求項11に記載のレーザ駆動ユニット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361770870P | 2013-02-28 | 2013-02-28 | |
US61/770,870 | 2013-02-28 | ||
PCT/US2014/019099 WO2014134340A1 (en) | 2013-02-28 | 2014-02-27 | Compact high current, high efficiency laser diode driver |
Publications (2)
Publication Number | Publication Date |
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JP2016512652A true JP2016512652A (ja) | 2016-04-28 |
JP6494532B2 JP6494532B2 (ja) | 2019-04-03 |
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JP2015560324A Active JP6494532B2 (ja) | 2013-02-28 | 2014-02-27 | コンパクトな高電流高効率レーザダイオードドライバ |
Country Status (4)
Country | Link |
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US (1) | US9972969B2 (ja) |
EP (1) | EP2962537B1 (ja) |
JP (1) | JP6494532B2 (ja) |
WO (1) | WO2014134340A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10454244B2 (en) | 2017-08-09 | 2019-10-22 | Lawrence Livermore National Security, Llc | Driver circuitry and systems for high current laser diode arrays |
WO2021079611A1 (ja) * | 2019-10-23 | 2021-04-29 | ローム株式会社 | レーザダイオード駆動回路 |
JP2023516161A (ja) * | 2020-02-26 | 2023-04-18 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 基板および半導体レーザー |
Families Citing this family (6)
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WO2014134340A1 (en) | 2013-02-28 | 2014-09-04 | Lawrence Livermore National Security, Llc | Compact high current, high efficiency laser diode driver |
CN109845052B (zh) * | 2016-08-31 | 2022-01-11 | 恩耐公司 | 激光冷却系统 |
EP3297105B1 (en) * | 2016-09-16 | 2021-05-12 | STMicroelectronics (Research & Development) Limited | Driver circuit for a laser diode |
CN112119546B (zh) | 2018-03-12 | 2024-03-26 | 恩耐公司 | 具有可变盘绕光纤的光纤激光器 |
GB2572604B (en) * | 2018-04-05 | 2020-12-16 | M Squared Lasers Ltd | Laser Diode Driver |
CN116247507B (zh) * | 2022-12-30 | 2023-11-03 | 重庆师范大学 | 一种兆赫兹级的大电流ld调制方法及电路 |
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US9972969B2 (en) | 2018-05-15 |
US20150372451A1 (en) | 2015-12-24 |
EP2962537A1 (en) | 2016-01-06 |
EP2962537A4 (en) | 2016-11-16 |
WO2014134340A1 (en) | 2014-09-04 |
JP6494532B2 (ja) | 2019-04-03 |
EP2962537B1 (en) | 2020-04-08 |
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