JP2013504095A - アルミニウム−ケイ素合金または結晶質ケイ素からなる基材、金属鏡、その製造方法およびその使用 - Google Patents
アルミニウム−ケイ素合金または結晶質ケイ素からなる基材、金属鏡、その製造方法およびその使用 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 title claims abstract description 42
- 229910000676 Si alloy Inorganic materials 0.000 title claims abstract description 15
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 6
- 239000000463 material Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 90
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000011247 coating layer Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000007516 diamond turning Methods 0.000 description 4
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- 230000003595 spectral effect Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
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- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
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- 239000000853 adhesive Substances 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BYHZILGQRYUQEB-UHFFFAOYSA-N [Si][Mo].[Si][Mo] Chemical compound [Si][Mo].[Si][Mo] BYHZILGQRYUQEB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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Abstract
【選択図】図1
Description
基材を(例えばケイ素で)被覆した後、表面構造の平滑化が行われる。ケイ素は、その研磨特性に関して良く知られた材料の代表である。ウェハの研磨の分野では広範囲にわたる知識が存在するが、しかし赤外線レンズシステムと鏡の製造においても同様である。極めて短波長のスペクトル範囲(EUV集光鏡)における用途については、数オングストロームのRMSのケイ素の超研磨が知られている。適当な平滑化方法は、例えば、標準的な化学的機械研磨法および磁気流動学的研磨法である。CMP(化学的機械研磨)やMRF(磁気流動学的仕上げ加工)と同様に、イオンビーム法も形状の修正のために用いられる。層の良好な均質性と純度は、一定の除去作用、ひいては近似する形状補正をもたらす。
本発明によれば、金属鏡を製造するための方法も含まれ、中間層、研磨層、被覆層および/または保護層は、化学的蒸着法、原子層堆積法、電子ビーム蒸着法および/またはスパッター法によって付与される。さらに、マグネトロンスパッタリングを用いることもできる。
Claims (16)
- 研磨可能な層(3)が付与されたアルミニウム-ケイ素合金または結晶質ケイ素からなる基材(1)であって、前記の層は、非晶質ケイ素、微結晶質ケイ素、炭化ケイ素、窒化ケイ素、窒化チタン、酸化アルミニウム、酸化ジルコニウム、クロムおよび/またはこれらの混合物からなる、前記基材。
- 接着層または遮断層として作用する中間層(2)が、基材(1)と研磨可能な層(3)との間に配置されていることを特徴とする、請求項1に記載の基材(1)。
- 研磨可能な層(3)は1μm〜10μmの厚さ、好ましくは3μm〜6μmの厚さを有することを特徴とする、請求項1および2のいずれか一つに記載の基材(1)。
- 複数の層から構成されていてもよい中間層(2)の厚さは、20〜200nmであることを特徴とする、請求項2または3のいずれか一つに記載の基材(1)。
- 中間層(2)は金属酸化物、特に酸化アルミニウムまたは酸化ジルコニウム、あるいは金属、特にチタンまたはクロムからなるか、あるいはこれらを含むことを特徴とする、請求項2から4のいずれか一つに記載の基材(1)。
- アルミニウム-ケイ素合金のケイ素の含有量は、このアルミニウム-ケイ素合金の総量に対して、25〜90重量%、好ましくは40〜80重量%であることを特徴とする、請求項1から5のいずれか一つに記載の基材(1)。
- 請求項1から6のいずれか一つに記載の基材(1)を含む金属鏡(10)であって、研磨可能な層(3)は光学的な品質が得られるように研磨されている、前記金属鏡。
- 研磨された層(3)の表面上に、基材(1)とは離れた方に、少なくとも一つの被覆層(4)が配置されていることを特徴とする、請求項1から7のいずれかに記載の金属鏡(10)。
- 少なくとも一つの被覆層(4)は金属層であり、特に、金、アルミニウム、銀、ケイ素-モリブデン、およびこれらの混合物からなる群から選択されることを特徴とする、請求項1から8のいずれかに記載の金属鏡(10)。
- 少なくとも一つの被覆層は、誘電体層または金属-誘電体層であることを特徴とする、請求項8または9のいずれかに記載の金属鏡(10)。
- さらなる層、特に保護層(5)が被覆層(4)の上に配置されていることを特徴とする、請求項8から10のいずれかに記載の金属鏡(10)。
- 保護層(5)のための材料は金属酸化物の群から選択されることを特徴とする、請求項7から11のいずれかに記載の金属鏡(10)。
- 中間層(2)、研磨された層(3)、被覆層(4)および/または保護層(5)が、化学的蒸着法、原子層堆積法、電子ビーム蒸着法および/またはスパッター法によって付与されることを特徴とする、金属鏡(10)を製造するための方法。
- スパッタリングガスは、アルゴン、酸素、キセノンおよびこれらの混合物からなる群から選択されることを特徴とする、請求項13に記載の金属鏡(10)を製造するための方法。
- アルミニウム-ケイ素合金のケイ素含有量および研磨された層(3)の厚さと材料は、温度変化による変形が広範囲にわたって避けられるように選択されることを特徴とする、請求項13または14のいずれかに記載の金属鏡(10)を製造するための方法。
- 反射望遠鏡における、または集光鏡としてのEUVビーム源における、請求項7から12のいずれかに記載の金属鏡(10)の使用および/または請求項13から15のいずれかに記載の方法に従って製造された金属鏡(10)の使用。
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DE102009040785A DE102009040785A1 (de) | 2009-09-09 | 2009-09-09 | Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung |
DE102009040785.5 | 2009-09-09 | ||
PCT/EP2010/005556 WO2011029603A1 (de) | 2009-09-09 | 2010-09-09 | Substrat aus einer aluminium-silizium-legierung oder kristallinem silizium, metallspiegel, verfahren zu dessen herstellung sowie dessen verwendung |
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EP (1) | EP2470683B1 (ja) |
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US20130057952A1 (en) | 2013-03-07 |
EP2470683A1 (de) | 2012-07-04 |
WO2011029603A1 (de) | 2011-03-17 |
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