JP5956926B2 - アルミニウム−ケイ素合金または結晶質ケイ素からなる基材、金属鏡、その製造方法およびその使用 - Google Patents
アルミニウム−ケイ素合金または結晶質ケイ素からなる基材、金属鏡、その製造方法およびその使用 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 51
- 239000002184 metal Substances 0.000 title claims description 51
- 239000000463 material Substances 0.000 title claims description 28
- 229910000676 Si alloy Inorganic materials 0.000 title claims description 20
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 title description 5
- 239000010410 layer Substances 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000011247 coating layer Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 17
- 238000005498 polishing Methods 0.000 description 16
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000007516 diamond turning Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BYHZILGQRYUQEB-UHFFFAOYSA-N [Si][Mo].[Si][Mo] Chemical compound [Si][Mo].[Si][Mo] BYHZILGQRYUQEB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- -1 titanium or chromium Chemical compound 0.000 description 1
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Description
基材を(例えばケイ素で)被覆した後、表面構造の平滑化が行われる。ケイ素は、その研磨特性に関して良く知られた材料の代表である。ウェハの研磨の分野では広範囲にわたる知識が存在するが、しかし赤外線レンズシステムと鏡の製造においても同様である。極めて短波長のスペクトル範囲(EUV集光鏡)における用途については、数オングストロームのRMSのケイ素の超研磨が知られている。適当な平滑化方法は、例えば、標準的な化学的機械研磨法および磁気流動学的研磨法である。CMP(化学的機械研磨)やMRF(磁気流動学的仕上げ加工)と同様に、イオンビーム法も形状の修正のために用いられる。層の良好な均質性と純度は、一定の除去作用、ひいては近似する形状補正をもたらす。
本発明によれば、金属鏡を製造するための方法も含まれ、中間層、研磨層、被覆層および/または保護層は、化学的蒸着法、原子層堆積法、電子ビーム蒸着法および/またはスパッター法によって付与される。さらに、マグネトロンスパッタリングを用いることもできる。
(2) 接着層または遮断層として作用する中間層2が、基材1と研磨可能な層3との間に配置されていることを特徴とする、(1)に記載の基材1。
(3) 研磨可能な層3は1μm〜10μmの厚さ、好ましくは3μm〜6μmの厚さを有することを特徴とする、(1)および(2)のいずれか一つに記載の基材1。
(4) 複数の層から構成されていてもよい中間層2の厚さは、20〜200nmであることを特徴とする、(2)または(3)のいずれか一つに記載の基材1。
(5) 中間層2は金属酸化物、特に酸化アルミニウムまたは酸化ジルコニウム、あるいは金属、特にチタンまたはクロムからなるか、あるいはこれらを含むことを特徴とする、(2)から(4)のいずれか一つに記載の基材1。
(6) アルミニウム・ケイ素合金のケイ素の含有量は、このアルミニウム-ケイ素合金の総量に対して、25〜90重量%、好ましくは40〜80重量%であることを特徴とする、(1)から(5)のいずれか一つに記載の基材1。
(7) (1)から(6)のいずれか一つに記載の基材1を含む金属鏡10であって、研磨可能な層3は光学的な品質が得られるように研磨されている、前記金属鏡。
(8) 研磨された層3の表面上に、基材1とは離れた方に、少なくとも一つの被覆層4が配置されていることを特徴とする、(1)から(7)のいずれかに記載の金属鏡10。
(9) 少なくとも一つの被覆層4は金属層であり、特に、金、アルミニウム、銀、ケイ素-モリブデン、およびこれらの混合物からなる群から選択されることを特徴とする、(1)から(8)のいずれかに記載の金属鏡10。
(10) 少なくとも一つの被覆層は、誘電体層または金属-誘電体層であることを特徴とする、(8)または(9)のいずれかに記載の金属鏡10。
(11) さらなる層、特に保護層5が被覆層4の上に配置されていることを特徴とする、(8)から(10)のいずれかに記載の金属鏡10。
(12) 保護層5のための材料は金属酸化物の群から選択されることを特徴とする、(7)から(11)のいずれかに記載の金属鏡10。
(13) 中間層2、研磨された層3、被覆層4および/または保護層5が、化学的蒸着法、原子層堆積法、電子ビーム蒸着法および/またはスパッター法によって付与されることを特徴とする、金属鏡10を製造するための方法。
(14) スパッタリングガスは、アルゴン、酸素、キセノンおよびこれらの混合物からなる群から選択されることを特徴とする、(13)に記載の金属鏡10を製造するための方法。
(15) アルミニウム・ケイ素合金のケイ素含有量および研磨された層3の厚さと材料は、温度変化による変形が広範囲にわたって避けられるように選択されることを特徴とする、(13)または(14)のいずれかに記載の金属鏡10を製造するための方法。
(16) 反射望遠鏡における、または集光鏡としてのEUVビーム源における、(7)から(12)のいずれかに記載の金属鏡10の使用および/または(13)から(15)のいずれかに記載の方法に従って製造された金属鏡10の使用。
添付する図面と以下の実施例は、本発明をこの変形例に限定することなく、本発明に係る主題をさらに詳しく説明するためのものである。
Claims (18)
- 研磨可能な層が付与されたアルミニウム−ケイ素合金からなる基材であって、
研磨可能な層が、非晶質ケイ素、微結晶質ケイ素、炭化ケイ素、窒化ケイ素、窒化チタン、酸化ジルコニウム、クロムおよび/またはこれらの混合物からなり、
遮断層として作用する中間層が、基材と研磨可能な層との間に配置されており、中間層が、酸化アルミニウム、酸化ジルコニウム、チタンまたはクロムからなるか、または、酸化アルミニウム、酸化ジルコニウム、チタンまたはクロムを含んでなる、上記基材。 - 研磨可能な層が、1μm〜10μmの厚さを有する、請求項1に記載の基材。
- 研磨可能な層が、3μm〜6μmの厚さを有する、請求項2に記載の基材。
- 複数の層から構成されていてもよい中間層の厚さは、20〜200nmである、請求項1〜3のいずれかに記載の基材。
- アルミニウム−ケイ素合金のケイ素の含有量は、このアルミニウム−ケイ素合金の総量に対して、25〜90重量%である、請求項1〜4のいずれかに記載の基材。
- アルミニウム−ケイ素合金のケイ素の含有量が、このアルミニウム−ケイ素合金の総量に対して、40〜80重量%である、請求項5に記載の基材。
- 請求項1〜6のいずれかに記載の基材を含む金属鏡であって、研磨された研磨可能な層が光学的な品質を有する、前記金属鏡。
- 研磨された研磨可能な層の表面上に、基材とは離れた方に、少なくとも一つの被覆層が配置されている、請求項7に記載の金属鏡。
- 少なくとも一つの被覆層が金属層である、請求項8に記載の金属鏡。
- 少なくとも一つの被覆層が、金、アルミニウム、銀、ケイ素−モリブデン、およびこれらの混合物からなる群から選択される金属層である、請求項8または9に記載の金属鏡。
- 少なくとも一つの被覆層は、誘電体層または金属−誘電体層である、請求項8〜10のいずれかに記載の金属鏡。
- さらなる層が被覆層の上に配置されている、請求項8〜11のいずれかに記載の金属鏡。
- 保護層が被覆層の上に配置されている、請求項8〜11のいずれかに記載の金属鏡。
- 保護層のための材料は金属酸化物の群から選択される、請求項13に記載の金属鏡。
- 請求項7〜14のいずれかに記載の金属鏡を製造する方法であって、
中間層、研磨された層、被覆層および/または保護層が、化学的蒸着法、原子層堆積法、電子ビーム蒸着法および/またはスパッター法によって付与される、上記方法。 - スパッタリングガスは、アルゴン、酸素、キセノンおよびこれらの混合物からなる群から選択される、請求項15に記載の方法。
- アルミニウム−ケイ素合金のケイ素含有量および研磨された層の厚さと材料は、温度変化による変形が広範囲にわたって避けられるように選択される、請求項15または16に記載の方法。
- 反射望遠鏡における、または集光鏡としてのEUVビーム源における、請求項7〜14のいずれかに記載の金属鏡の使用、および/または、請求項15〜17のいずれかに記載の方法に従って製造された金属鏡の使用。
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DE102009040785A DE102009040785A1 (de) | 2009-09-09 | 2009-09-09 | Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung |
DE102009040785.5 | 2009-09-09 | ||
PCT/EP2010/005556 WO2011029603A1 (de) | 2009-09-09 | 2010-09-09 | Substrat aus einer aluminium-silizium-legierung oder kristallinem silizium, metallspiegel, verfahren zu dessen herstellung sowie dessen verwendung |
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