JP2013500505A5 - - Google Patents

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Publication number
JP2013500505A5
JP2013500505A5 JP2012522238A JP2012522238A JP2013500505A5 JP 2013500505 A5 JP2013500505 A5 JP 2013500505A5 JP 2012522238 A JP2012522238 A JP 2012522238A JP 2012522238 A JP2012522238 A JP 2012522238A JP 2013500505 A5 JP2013500505 A5 JP 2013500505A5
Authority
JP
Japan
Prior art keywords
exits
electrode
electrical control
active region
light beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012522238A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013500505A (ja
Filing date
Publication date
Priority claimed from FR0955365A external-priority patent/FR2948816B1/fr
Application filed filed Critical
Publication of JP2013500505A publication Critical patent/JP2013500505A/ja
Publication of JP2013500505A5 publication Critical patent/JP2013500505A5/ja
Pending legal-status Critical Current

Links

JP2012522238A 2009-07-30 2010-07-30 Isb遷移における吸収又は率の変化に基づく電気光学デバイス Pending JP2013500505A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0955365 2009-07-30
FR0955365A FR2948816B1 (fr) 2009-07-30 2009-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb.
PCT/FR2010/051636 WO2011012833A2 (fr) 2009-07-30 2010-07-30 Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb

Publications (2)

Publication Number Publication Date
JP2013500505A JP2013500505A (ja) 2013-01-07
JP2013500505A5 true JP2013500505A5 (enExample) 2013-09-12

Family

ID=41592108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012522238A Pending JP2013500505A (ja) 2009-07-30 2010-07-30 Isb遷移における吸収又は率の変化に基づく電気光学デバイス

Country Status (6)

Country Link
US (1) US20120120478A1 (enExample)
EP (1) EP2460048A2 (enExample)
JP (1) JP2013500505A (enExample)
CA (1) CA2769478A1 (enExample)
FR (1) FR2948816B1 (enExample)
WO (1) WO2011012833A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014028468A2 (en) * 2012-08-13 2014-02-20 The Curators Of The University Of Missouri An optically activated linear switch for radar limiters or high power switching applications
JP5956371B2 (ja) * 2013-03-22 2016-07-27 日本電信電話株式会社 光変調導波路
CN111950346A (zh) * 2020-06-28 2020-11-17 中国电子科技网络信息安全有限公司 一种基于生成式对抗网络的行人检测数据扩充方法
WO2023233584A1 (ja) 2022-06-01 2023-12-07 三菱電機株式会社 半導体光変調器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215875A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US5300789A (en) * 1991-12-24 1994-04-05 At&T Bell Laboratories Article comprising means for modulating the optical transparency of a semiconductor body, and method of operating the article
JPH08297263A (ja) * 1995-04-26 1996-11-12 Toshiba Corp 半導体光導波素子
JP2971419B2 (ja) * 1997-07-31 1999-11-08 株式会社東芝 光スイッチ
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
JP2001108950A (ja) * 1999-10-08 2001-04-20 Toshiba Corp 半導体光スイッチの製造方法
US7180100B2 (en) * 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP3816924B2 (ja) * 2004-01-30 2006-08-30 株式会社東芝 半導体導波型光制御素子

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