JP2013251536A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013251536A5 JP2013251536A5 JP2013096136A JP2013096136A JP2013251536A5 JP 2013251536 A5 JP2013251536 A5 JP 2013251536A5 JP 2013096136 A JP2013096136 A JP 2013096136A JP 2013096136 A JP2013096136 A JP 2013096136A JP 2013251536 A5 JP2013251536 A5 JP 2013251536A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- contact
- layer
- region
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000012774 insulation material Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013096136A JP6186166B2 (ja) | 2012-05-02 | 2013-05-01 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012105034 | 2012-05-02 | ||
| JP2012105034 | 2012-05-02 | ||
| JP2013096136A JP6186166B2 (ja) | 2012-05-02 | 2013-05-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013251536A JP2013251536A (ja) | 2013-12-12 |
| JP2013251536A5 true JP2013251536A5 (enExample) | 2016-04-14 |
| JP6186166B2 JP6186166B2 (ja) | 2017-08-23 |
Family
ID=49849895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013096136A Expired - Fee Related JP6186166B2 (ja) | 2012-05-02 | 2013-05-01 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6186166B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI637484B (zh) * | 2013-12-26 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6523695B2 (ja) * | 2014-02-05 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10204898B2 (en) * | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2016038823A1 (ja) * | 2014-09-10 | 2016-03-17 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| TWI718125B (zh) | 2015-03-03 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP7022592B2 (ja) * | 2018-01-11 | 2022-02-18 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116977A (ja) * | 2003-10-10 | 2005-04-28 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| JP3919198B2 (ja) * | 2004-05-28 | 2007-05-23 | 株式会社半導体エネルギー研究所 | 電気光学装置を備えたテレビ及びコンピュータ |
| US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
| JP4971593B2 (ja) * | 2005-01-11 | 2012-07-11 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP2006253307A (ja) * | 2005-03-09 | 2006-09-21 | Sharp Corp | 半導体素子及びその製造方法並びに液晶表示装置 |
| JP5503895B2 (ja) * | 2008-04-25 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| KR101862823B1 (ko) * | 2010-02-05 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| US8519387B2 (en) * | 2010-07-26 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing |
-
2013
- 2013-05-01 JP JP2013096136A patent/JP6186166B2/ja not_active Expired - Fee Related