JP6186166B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6186166B2 JP6186166B2 JP2013096136A JP2013096136A JP6186166B2 JP 6186166 B2 JP6186166 B2 JP 6186166B2 JP 2013096136 A JP2013096136 A JP 2013096136A JP 2013096136 A JP2013096136 A JP 2013096136A JP 6186166 B2 JP6186166 B2 JP 6186166B2
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- insulating layer
- layer
- oxide semiconductor
- transistor
- film
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
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| TWI637484B (zh) | 2013-12-26 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6523695B2 (ja) * | 2014-02-05 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10204898B2 (en) * | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2016038823A1 (ja) * | 2014-09-10 | 2016-03-17 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| TWI718125B (zh) | 2015-03-03 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP7022592B2 (ja) * | 2018-01-11 | 2022-02-18 | 株式会社ジャパンディスプレイ | 表示装置 |
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| JP3919198B2 (ja) * | 2004-05-28 | 2007-05-23 | 株式会社半導体エネルギー研究所 | 電気光学装置を備えたテレビ及びコンピュータ |
| US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
| JP4971593B2 (ja) * | 2005-01-11 | 2012-07-11 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP2006253307A (ja) * | 2005-03-09 | 2006-09-21 | Sharp Corp | 半導体素子及びその製造方法並びに液晶表示装置 |
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| WO2011096277A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
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