JP2013235620A5 - - Google Patents

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Publication number
JP2013235620A5
JP2013235620A5 JP2012105558A JP2012105558A JP2013235620A5 JP 2013235620 A5 JP2013235620 A5 JP 2013235620A5 JP 2012105558 A JP2012105558 A JP 2012105558A JP 2012105558 A JP2012105558 A JP 2012105558A JP 2013235620 A5 JP2013235620 A5 JP 2013235620A5
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JP
Japan
Prior art keywords
circuit
word
memory device
semiconductor memory
control unit
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JP2012105558A
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English (en)
Japanese (ja)
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JP5998381B2 (ja
JP2013235620A (ja
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Priority to JP2012105558A priority Critical patent/JP5998381B2/ja
Priority claimed from JP2012105558A external-priority patent/JP5998381B2/ja
Priority to PCT/JP2013/062791 priority patent/WO2013168685A1/ja
Priority to US14/399,041 priority patent/US9324429B2/en
Priority to KR1020147034459A priority patent/KR101948126B1/ko
Publication of JP2013235620A publication Critical patent/JP2013235620A/ja
Publication of JP2013235620A5 publication Critical patent/JP2013235620A5/ja
Application granted granted Critical
Publication of JP5998381B2 publication Critical patent/JP5998381B2/ja
Active legal-status Critical Current
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JP2012105558A 2012-05-06 2012-05-06 半導体記憶装置 Active JP5998381B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012105558A JP5998381B2 (ja) 2012-05-06 2012-05-06 半導体記憶装置
PCT/JP2013/062791 WO2013168685A1 (ja) 2012-05-06 2013-05-03 半導体記憶装置
US14/399,041 US9324429B2 (en) 2012-05-06 2013-05-03 Semiconductor storage device
KR1020147034459A KR101948126B1 (ko) 2012-05-06 2013-05-03 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012105558A JP5998381B2 (ja) 2012-05-06 2012-05-06 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2013235620A JP2013235620A (ja) 2013-11-21
JP2013235620A5 true JP2013235620A5 (enExample) 2015-06-25
JP5998381B2 JP5998381B2 (ja) 2016-09-28

Family

ID=49550722

Family Applications (1)

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JP2012105558A Active JP5998381B2 (ja) 2012-05-06 2012-05-06 半導体記憶装置

Country Status (4)

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US (1) US9324429B2 (enExample)
JP (1) JP5998381B2 (enExample)
KR (1) KR101948126B1 (enExample)
WO (1) WO2013168685A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9384835B2 (en) * 2012-05-29 2016-07-05 Globalfoundries Inc. Content addressable memory early-predict late-correct single ended sensing
KR101714984B1 (ko) * 2016-08-29 2017-03-09 인하대학교 산학협력단 지역적 셀프 리셋팅 동작을 하는 회로의 방법 및 장치
TWI713051B (zh) * 2019-10-21 2020-12-11 瑞昱半導體股份有限公司 內容可定址記憶體裝置
CN112735495B (zh) * 2019-10-28 2024-11-22 瑞昱半导体股份有限公司 内容可定址存储器装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997882A (en) 1975-04-01 1976-12-14 Burroughs Corporation Content addressable memory system employing charge coupled device storage and directory registers and N/(1-H) counter refresh synchronization
JPH02308499A (ja) 1989-05-23 1990-12-21 Toshiba Corp 連想メモリ
JPH03212896A (ja) * 1990-01-16 1991-09-18 Mitsubishi Electric Corp 連想記憶装置
US5485418A (en) 1990-01-16 1996-01-16 Mitsubishi Denki Kabushiki Kaisha Associative memory
JP2779114B2 (ja) * 1993-05-19 1998-07-23 川崎製鉄株式会社 連想メモリ
JP3560166B2 (ja) * 1993-06-22 2004-09-02 川崎マイクロエレクトロニクス株式会社 半導体記憶装置
JP2002197873A (ja) * 2000-12-27 2002-07-12 Kawasaki Microelectronics Kk 連想メモリ
JP2002237190A (ja) 2001-02-07 2002-08-23 Kawasaki Microelectronics Kk 連想メモリ装置およびその構成方法
JP4552689B2 (ja) 2005-02-28 2010-09-29 株式会社日立製作所 半導体記憶装置
JP4861012B2 (ja) 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Ｃａｍ装置
US7426127B2 (en) * 2006-12-21 2008-09-16 Intel Corporation Full-rail, dual-supply global bitline accelerator CAM circuit
JP5631278B2 (ja) * 2011-08-10 2014-11-26 ルネサスエレクトロニクス株式会社 内容参照メモリ

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