KR101948126B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

Info

Publication number
KR101948126B1
KR101948126B1 KR1020147034459A KR20147034459A KR101948126B1 KR 101948126 B1 KR101948126 B1 KR 101948126B1 KR 1020147034459 A KR1020147034459 A KR 1020147034459A KR 20147034459 A KR20147034459 A KR 20147034459A KR 101948126 B1 KR101948126 B1 KR 101948126B1
Authority
KR
South Korea
Prior art keywords
word
circuit
sub
search
input control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147034459A
Other languages
English (en)
Korean (ko)
Other versions
KR20150014487A (ko
Inventor
다카히로 하뉴우
쇼운 마쓰나가
나오야 오니자와
빈센트 가우뎃
Original Assignee
고쿠리츠다이가쿠호진 도호쿠다이가쿠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고쿠리츠다이가쿠호진 도호쿠다이가쿠 filed Critical 고쿠리츠다이가쿠호진 도호쿠다이가쿠
Publication of KR20150014487A publication Critical patent/KR20150014487A/ko
Application granted granted Critical
Publication of KR101948126B1 publication Critical patent/KR101948126B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Static Random-Access Memory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
KR1020147034459A 2012-05-06 2013-05-03 반도체 기억 장치 Active KR101948126B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-105558 2012-05-06
JP2012105558A JP5998381B2 (ja) 2012-05-06 2012-05-06 半導体記憶装置
PCT/JP2013/062791 WO2013168685A1 (ja) 2012-05-06 2013-05-03 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20150014487A KR20150014487A (ko) 2015-02-06
KR101948126B1 true KR101948126B1 (ko) 2019-02-14

Family

ID=49550722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147034459A Active KR101948126B1 (ko) 2012-05-06 2013-05-03 반도체 기억 장치

Country Status (4)

Country Link
US (1) US9324429B2 (enExample)
JP (1) JP5998381B2 (enExample)
KR (1) KR101948126B1 (enExample)
WO (1) WO2013168685A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9384835B2 (en) * 2012-05-29 2016-07-05 Globalfoundries Inc. Content addressable memory early-predict late-correct single ended sensing
KR101714984B1 (ko) * 2016-08-29 2017-03-09 인하대학교 산학협력단 지역적 셀프 리셋팅 동작을 하는 회로의 방법 및 장치
TWI713051B (zh) * 2019-10-21 2020-12-11 瑞昱半導體股份有限公司 內容可定址記憶體裝置
CN112735495B (zh) * 2019-10-28 2024-11-22 瑞昱半导体股份有限公司 内容可定址存储器装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997882A (en) 1975-04-01 1976-12-14 Burroughs Corporation Content addressable memory system employing charge coupled device storage and directory registers and N/(1-H) counter refresh synchronization
US20020080638A1 (en) 2001-02-07 2002-06-27 Kawasaki Microelectronics, Inc. Content addressable memory device capable of being used as binary CAM device or as ternary CAM device and structure method therefor
US20060233011A1 (en) 2005-03-31 2006-10-19 Renesas Technology Corp. CAM device and remedial method for CAM device
US20080151588A1 (en) 2006-12-21 2008-06-26 Intel Corporation Full-rail, dual-supply global bitline accelerator CAM circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02308499A (ja) 1989-05-23 1990-12-21 Toshiba Corp 連想メモリ
JPH03212896A (ja) * 1990-01-16 1991-09-18 Mitsubishi Electric Corp 連想記憶装置
US5485418A (en) 1990-01-16 1996-01-16 Mitsubishi Denki Kabushiki Kaisha Associative memory
JP2779114B2 (ja) * 1993-05-19 1998-07-23 川崎製鉄株式会社 連想メモリ
JP3560166B2 (ja) * 1993-06-22 2004-09-02 川崎マイクロエレクトロニクス株式会社 半導体記憶装置
JP2002197873A (ja) * 2000-12-27 2002-07-12 Kawasaki Microelectronics Kk 連想メモリ
JP4552689B2 (ja) 2005-02-28 2010-09-29 株式会社日立製作所 半導体記憶装置
JP5631278B2 (ja) * 2011-08-10 2014-11-26 ルネサスエレクトロニクス株式会社 内容参照メモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997882A (en) 1975-04-01 1976-12-14 Burroughs Corporation Content addressable memory system employing charge coupled device storage and directory registers and N/(1-H) counter refresh synchronization
US20020080638A1 (en) 2001-02-07 2002-06-27 Kawasaki Microelectronics, Inc. Content addressable memory device capable of being used as binary CAM device or as ternary CAM device and structure method therefor
US20060233011A1 (en) 2005-03-31 2006-10-19 Renesas Technology Corp. CAM device and remedial method for CAM device
US20080151588A1 (en) 2006-12-21 2008-06-26 Intel Corporation Full-rail, dual-supply global bitline accelerator CAM circuit

Also Published As

Publication number Publication date
WO2013168685A1 (ja) 2013-11-14
KR20150014487A (ko) 2015-02-06
JP2013235620A (ja) 2013-11-21
US9324429B2 (en) 2016-04-26
JP5998381B2 (ja) 2016-09-28
US20150109842A1 (en) 2015-04-23

Similar Documents

Publication Publication Date Title
Onizawa et al. High-throughput low-energy content-addressable memory based on self-timed overlapped search mechanism
US6392910B1 (en) Priority encoder with multiple match function for content addressable memories and methods for implementing the same
US9159421B2 (en) Longest prefix match internet protocol content addressable memories and related methods
RU2406167C2 (ru) Ассоциативная память со смешанным параллельно-последовательным поиском
Onizawa et al. High-throughput low-energy self-timed CAM based on reordered overlapped search mechanism
Hussain et al. Match-line division and control to reduce power dissipation in content addressable memory
RU2414014C2 (ru) Способ и устройство для уменьшения потребляемой мощности в ассоциативной памяти
US7057913B2 (en) Low-power search line circuit encoding technique for content addressable memories
KR101948126B1 (ko) 반도체 기억 장치
Mohan et al. Low power dual matchline ternary content addressable memory
Karthik et al. Design and Implementation of a Low Power Ternary Content Addressable Memory (TCAM)
CN101859596A (zh) 一种内容可寻址存储器
Onizawa et al. High-throughput CAM based on a synchronous overlapped search scheme
Hussain et al. Efficient matchline controller for hybrid content addressable memory
Hussain et al. Match‐line control unit for power and delay reduction in hybrid CAM
Devi et al. Low Energy Asynchronous CAM Based On Reordered Overlapped Search Mechanism
Telajala et al. A low-power split-controlled single ended storage content addressable memory
Satyanarayana et al. Design of TCAM architecture for low power and high performance applications
Mishra et al. The analogy of matchline sensing techniques for content addressable memory (CAM)
CN114758704A (zh) 内容可寻址存储器及其操作方法
Mahendra et al. Design and implementation of drivers and selectors for content addressable memory (CAM)
Jiang et al. A fully parallel content addressable memory design using multi-bank structure
Alrushood et al. Improving energy consumption in content-addressable memory through precomputation
WO2003050819A1 (en) Power saving cam
Muthukrishnan et al. An Efficient Low Power Sparse Clustered Network By Using Reordered Overlapped Content Addressable Memory

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141208

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180426

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20180426

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180910

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20190121

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190208

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190208

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220103

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240102

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20241230

Start annual number: 7

End annual number: 7