JP2016106341A5 - - Google Patents
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- JP2016106341A5 JP2016106341A5 JP2016000278A JP2016000278A JP2016106341A5 JP 2016106341 A5 JP2016106341 A5 JP 2016106341A5 JP 2016000278 A JP2016000278 A JP 2016000278A JP 2016000278 A JP2016000278 A JP 2016000278A JP 2016106341 A5 JP2016106341 A5 JP 2016106341A5
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- JP
- Japan
- Prior art keywords
- pull
- transistor
- output
- down transistor
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000004044 response Effects 0.000 claims 7
- 230000003068 static effect Effects 0.000 claims 6
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/730,524 | 2012-12-28 | ||
| US13/730,524 US8958226B2 (en) | 2012-12-28 | 2012-12-28 | Static NAND cell for ternary content addressable memory (TCAM) |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015550689A Division JP5866491B1 (ja) | 2012-12-28 | 2013-12-20 | ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016106341A JP2016106341A (ja) | 2016-06-16 |
| JP2016106341A5 true JP2016106341A5 (enExample) | 2016-11-04 |
| JP6062578B2 JP6062578B2 (ja) | 2017-01-18 |
Family
ID=49918923
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015550689A Expired - Fee Related JP5866491B1 (ja) | 2012-12-28 | 2013-12-20 | ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル |
| JP2016000278A Expired - Fee Related JP6062578B2 (ja) | 2012-12-28 | 2016-01-04 | ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015550689A Expired - Fee Related JP5866491B1 (ja) | 2012-12-28 | 2013-12-20 | ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8958226B2 (enExample) |
| EP (1) | EP2939240B1 (enExample) |
| JP (2) | JP5866491B1 (enExample) |
| KR (1) | KR101557883B1 (enExample) |
| CN (1) | CN104885159B (enExample) |
| TW (1) | TWI508069B (enExample) |
| WO (1) | WO2014105683A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8891273B2 (en) | 2012-12-26 | 2014-11-18 | Qualcomm Incorporated | Pseudo-NOR cell for ternary content addressable memory |
| US8958226B2 (en) | 2012-12-28 | 2015-02-17 | Qualcomm Incorporated | Static NAND cell for ternary content addressable memory (TCAM) |
| US8934278B2 (en) | 2012-12-28 | 2015-01-13 | Qualcomm Incorporated | Hybrid ternary content addressable memory |
| US10778584B2 (en) | 2013-11-05 | 2020-09-15 | Cisco Technology, Inc. | System and method for multi-path load balancing in network fabrics |
| US9832122B2 (en) | 2013-11-05 | 2017-11-28 | Cisco Technology, Inc. | System and method for identification of large-data flows |
| US9769078B2 (en) | 2013-11-05 | 2017-09-19 | Cisco Technology, Inc. | Dynamic flowlet prioritization |
| US9655232B2 (en) | 2013-11-05 | 2017-05-16 | Cisco Technology, Inc. | Spanning tree protocol (STP) optimization techniques |
| US9502111B2 (en) * | 2013-11-05 | 2016-11-22 | Cisco Technology, Inc. | Weighted equal cost multipath routing |
| US9674086B2 (en) | 2013-11-05 | 2017-06-06 | Cisco Technology, Inc. | Work conserving schedular based on ranking |
| US9374294B1 (en) | 2013-11-05 | 2016-06-21 | Cisco Technology, Inc. | On-demand learning in overlay networks |
| EP3284093B1 (en) | 2015-04-14 | 2021-08-04 | Cambou, Bertrand, F. | Memory circuits using a blocking state |
| WO2016182596A1 (en) | 2015-05-11 | 2016-11-17 | Cambou Bertrand F | Memory circuit using dynamic random access memory arrays |
| US9588908B2 (en) | 2015-06-02 | 2017-03-07 | Bertrand F. Cambou | Memory circuit using resistive random access memory arrays in a secure element |
| US9728258B1 (en) | 2016-10-04 | 2017-08-08 | National Tsing Hua University | Ternary content addressable memory |
| US9941008B1 (en) * | 2017-03-23 | 2018-04-10 | National Taiwan University | Ternary content addressable memory device for software defined networking and method thereof |
| CN113971973B (zh) | 2018-07-16 | 2025-09-02 | 蓝枪半导体有限责任公司 | 用于三态内容寻址存储器的控制电路 |
| KR102505089B1 (ko) | 2021-07-16 | 2023-02-28 | 연세대학교 산학협력단 | 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리 |
| US12243574B2 (en) | 2021-08-24 | 2025-03-04 | Seoul National University R&Db Foundation | Content addressable memory device and operating method thereof |
| KR102646177B1 (ko) | 2021-08-24 | 2024-03-12 | 서울대학교산학협력단 | 내용 주소화 메모리 장치 및 그 동작 방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044005A (en) | 1999-02-03 | 2000-03-28 | Sibercore Technologies Incorporated | Content addressable memory storage device |
| US6499081B1 (en) | 1999-02-23 | 2002-12-24 | Netlogic Microsystems, Inc. | Method and apparatus for determining a longest prefix match in a segmented content addressable memory device |
| US6574702B2 (en) | 1999-02-23 | 2003-06-03 | Netlogic Microsystems, Inc. | Method and apparatus for determining an exact match in a content addressable memory device |
| US6411538B1 (en) | 2000-11-28 | 2002-06-25 | Silicon Access Networks | Compact load-less static ternary CAM |
| US6400593B1 (en) * | 2001-02-08 | 2002-06-04 | Intregrated Device Technology, Inc. | Ternary CAM cell with DRAM mask circuit |
| US6385070B1 (en) | 2001-03-13 | 2002-05-07 | Tality, L.P. | Content Addressable Memory array, cell, and method using 5-transistor compare circuit and avoiding crowbar current |
| EP1461811B1 (en) | 2001-12-28 | 2006-03-29 | Mosaid Technologies Incorporated | Low power content addressable memory architecture |
| US6768659B2 (en) | 2001-12-31 | 2004-07-27 | Mosaid Technologies Incorporated | Circuit and method for reducing power usage in a content addressable memory |
| TWI302706B (en) | 2002-01-31 | 2008-11-01 | Mosaid Technologies Inc | Circuit and method for reducing power usage in a content addressable memory |
| US6760242B1 (en) | 2002-04-10 | 2004-07-06 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein |
| KR100435804B1 (ko) * | 2002-06-28 | 2004-06-10 | 삼성전자주식회사 | 터너리 내용 주소화 메모리 장치 |
| US6906937B1 (en) | 2003-03-21 | 2005-06-14 | Netlogic Microsystems, Inc. | Bit line control circuit for a content addressable memory |
| US6900999B1 (en) | 2003-06-30 | 2005-05-31 | Integrated Device Technology, Inc. | Ternary content addressable memory (TCAM) cells with small footprint size and efficient layout aspect ratio |
| US7120040B2 (en) | 2004-06-01 | 2006-10-10 | Mosaid Technologies Incorporation | Ternary CAM cell for reduced matchline capacitance |
| US7555594B2 (en) | 2004-07-22 | 2009-06-30 | Netlogic Microsystems, Inc. | Range representation in a content addressable memory (CAM) using an improved encoding scheme |
| US7050318B1 (en) | 2004-10-01 | 2006-05-23 | Netlogic Microsystems, Inc. | Selective match line pre-charging in a CAM device using pre-compare operations |
| US7286379B1 (en) | 2005-09-08 | 2007-10-23 | Lsi Corporation | Content addressable memory (CAM) architecture and method of operating the same |
| US7355890B1 (en) | 2006-10-26 | 2008-04-08 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having NAND-type compare circuits |
| US8125810B2 (en) | 2007-08-01 | 2012-02-28 | Texas Instruments Incorporated | Low power ternary content-addressable memory (TCAM) |
| US7633830B2 (en) | 2007-11-29 | 2009-12-15 | Agere Systems Inc. | Reduced leakage driver circuit and memory device employing same |
| US8169808B2 (en) | 2008-01-25 | 2012-05-01 | Micron Technology, Inc. | NAND flash content addressable memory |
| US7940541B2 (en) | 2008-05-21 | 2011-05-10 | Texas Instruments Incorporated | Bit cell designs for ternary content addressable memory |
| TWI369683B (en) | 2008-06-11 | 2012-08-01 | Realtek Semiconductor Corp | Content addressable memory |
| TWI391946B (zh) | 2008-09-18 | 2013-04-01 | Realtek Semiconductor Corp | 內容可定址記憶體 |
| WO2010138639A2 (en) | 2009-05-26 | 2010-12-02 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Longest prefix match internet protocol content addressable memories and related methods |
| US7907432B2 (en) | 2009-06-30 | 2011-03-15 | Netlogic Microsystems, Inc. | Content addressable memory device for simultaneously searching multiple flows |
| US8582338B1 (en) | 2010-08-31 | 2013-11-12 | Netlogic Microsystems, Inc. | Ternary content addressable memory cell having single transistor pull-down stack |
| US8891273B2 (en) | 2012-12-26 | 2014-11-18 | Qualcomm Incorporated | Pseudo-NOR cell for ternary content addressable memory |
| US8934278B2 (en) | 2012-12-28 | 2015-01-13 | Qualcomm Incorporated | Hybrid ternary content addressable memory |
| US8958226B2 (en) | 2012-12-28 | 2015-02-17 | Qualcomm Incorporated | Static NAND cell for ternary content addressable memory (TCAM) |
-
2012
- 2012-12-28 US US13/730,524 patent/US8958226B2/en active Active
-
2013
- 2013-12-20 EP EP13818158.1A patent/EP2939240B1/en active Active
- 2013-12-20 CN CN201380068595.8A patent/CN104885159B/zh active Active
- 2013-12-20 WO PCT/US2013/076848 patent/WO2014105683A1/en not_active Ceased
- 2013-12-20 JP JP2015550689A patent/JP5866491B1/ja not_active Expired - Fee Related
- 2013-12-20 KR KR1020157020112A patent/KR101557883B1/ko not_active Expired - Fee Related
- 2013-12-26 TW TW102148453A patent/TWI508069B/zh not_active IP Right Cessation
-
2014
- 2014-10-01 US US14/503,861 patent/US9082481B2/en active Active
-
2016
- 2016-01-04 JP JP2016000278A patent/JP6062578B2/ja not_active Expired - Fee Related
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