JP5866491B1 - ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル - Google Patents

３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル Download PDF

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Publication number
JP5866491B1
JP5866491B1 JP2015550689A JP2015550689A JP5866491B1 JP 5866491 B1 JP5866491 B1 JP 5866491B1 JP 2015550689 A JP2015550689 A JP 2015550689A JP 2015550689 A JP2015550689 A JP 2015550689A JP 5866491 B1 JP5866491 B1 JP 5866491B1
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pull
transistor
cell
mask
key
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Japanese (ja)
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JP2016506591A (ja
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タージオグル、イージン
デサイ、ニシス
バッティコンダ、ラケッシュ
ジュン、チャンホ
ユン、セイ・スン
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2015550689A 2012-12-28 2013-12-20 ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル Expired - Fee Related JP5866491B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/730,524 2012-12-28
US13/730,524 US8958226B2 (en) 2012-12-28 2012-12-28 Static NAND cell for ternary content addressable memory (TCAM)
PCT/US2013/076848 WO2014105683A1 (en) 2012-12-28 2013-12-20 Static nand cell for ternary content addressable memory (tcam)

Related Child Applications (1)

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JP2016000278A Division JP6062578B2 (ja) 2012-12-28 2016-01-04 ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル

Publications (2)

Publication Number Publication Date
JP5866491B1 true JP5866491B1 (ja) 2016-02-17
JP2016506591A JP2016506591A (ja) 2016-03-03

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JP2015550689A Expired - Fee Related JP5866491B1 (ja) 2012-12-28 2013-12-20 ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル
JP2016000278A Expired - Fee Related JP6062578B2 (ja) 2012-12-28 2016-01-04 ３値連想メモリ（ｔｃａｍ）のための静的ｎａｎｄセル

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Country Status (7)

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US (2) US8958226B2 (enExample)
EP (1) EP2939240B1 (enExample)
JP (2) JP5866491B1 (enExample)
KR (1) KR101557883B1 (enExample)
CN (1) CN104885159B (enExample)
TW (1) TWI508069B (enExample)
WO (1) WO2014105683A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8891273B2 (en) 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory
US9769078B2 (en) 2013-11-05 2017-09-19 Cisco Technology, Inc. Dynamic flowlet prioritization
US9502111B2 (en) 2013-11-05 2016-11-22 Cisco Technology, Inc. Weighted equal cost multipath routing
US9655232B2 (en) 2013-11-05 2017-05-16 Cisco Technology, Inc. Spanning tree protocol (STP) optimization techniques
US9374294B1 (en) 2013-11-05 2016-06-21 Cisco Technology, Inc. On-demand learning in overlay networks
US9674086B2 (en) 2013-11-05 2017-06-06 Cisco Technology, Inc. Work conserving schedular based on ranking
US10778584B2 (en) 2013-11-05 2020-09-15 Cisco Technology, Inc. System and method for multi-path load balancing in network fabrics
US9832122B2 (en) 2013-11-05 2017-11-28 Cisco Technology, Inc. System and method for identification of large-data flows
EP3284093B1 (en) 2015-04-14 2021-08-04 Cambou, Bertrand, F. Memory circuits using a blocking state
EP3295331A4 (en) 2015-05-11 2019-04-17 Cambou, Bertrand, F. MEMORY SWITCHING USING DYNAMIC DIRECT ACCESS MEMORY ARRANGEMENTS
EP3304561B1 (en) 2015-06-02 2020-08-26 Cambou, Bertrand, F. Memory circuit using resistive random access memory arrays in a secure element
US9728258B1 (en) 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory
US9941008B1 (en) * 2017-03-23 2018-04-10 National Taiwan University Ternary content addressable memory device for software defined networking and method thereof
CN110729013B (zh) 2018-07-16 2021-10-29 蓝枪半导体有限责任公司 用于三态内容寻址存储器的控制电路
KR102505089B1 (ko) 2021-07-16 2023-02-28 연세대학교 산학협력단 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리
US12243574B2 (en) 2021-08-24 2025-03-04 Seoul National University R&Db Foundation Content addressable memory device and operating method thereof
KR102646177B1 (ko) 2021-08-24 2024-03-12 서울대학교산학협력단 내용 주소화 메모리 장치 및 그 동작 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090310395A1 (en) * 2008-06-11 2009-12-17 Realtek Semiconductor Corp. Content-Addressable Memory

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6044005A (en) 1999-02-03 2000-03-28 Sibercore Technologies Incorporated Content addressable memory storage device
US6574702B2 (en) 1999-02-23 2003-06-03 Netlogic Microsystems, Inc. Method and apparatus for determining an exact match in a content addressable memory device
US6499081B1 (en) 1999-02-23 2002-12-24 Netlogic Microsystems, Inc. Method and apparatus for determining a longest prefix match in a segmented content addressable memory device
US6411538B1 (en) 2000-11-28 2002-06-25 Silicon Access Networks Compact load-less static ternary CAM
US6400593B1 (en) * 2001-02-08 2002-06-04 Intregrated Device Technology, Inc. Ternary CAM cell with DRAM mask circuit
US6385070B1 (en) 2001-03-13 2002-05-07 Tality, L.P. Content Addressable Memory array, cell, and method using 5-transistor compare circuit and avoiding crowbar current
ATE322075T1 (de) 2001-12-28 2006-04-15 Mosaid Technologies Inc Assoziativspeicherarchitektur mit geringem leistungsverbrauch
US6768659B2 (en) 2001-12-31 2004-07-27 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
TWI302706B (en) 2002-01-31 2008-11-01 Mosaid Technologies Inc Circuit and method for reducing power usage in a content addressable memory
US6760242B1 (en) 2002-04-10 2004-07-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein
KR100435804B1 (ko) * 2002-06-28 2004-06-10 삼성전자주식회사 터너리 내용 주소화 메모리 장치
US6906937B1 (en) 2003-03-21 2005-06-14 Netlogic Microsystems, Inc. Bit line control circuit for a content addressable memory
US6900999B1 (en) 2003-06-30 2005-05-31 Integrated Device Technology, Inc. Ternary content addressable memory (TCAM) cells with small footprint size and efficient layout aspect ratio
US7120040B2 (en) 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7555594B2 (en) 2004-07-22 2009-06-30 Netlogic Microsystems, Inc. Range representation in a content addressable memory (CAM) using an improved encoding scheme
US7050318B1 (en) 2004-10-01 2006-05-23 Netlogic Microsystems, Inc. Selective match line pre-charging in a CAM device using pre-compare operations
US7286379B1 (en) 2005-09-08 2007-10-23 Lsi Corporation Content addressable memory (CAM) architecture and method of operating the same
US7355890B1 (en) 2006-10-26 2008-04-08 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having NAND-type compare circuits
US8125810B2 (en) 2007-08-01 2012-02-28 Texas Instruments Incorporated Low power ternary content-addressable memory (TCAM)
US7633830B2 (en) 2007-11-29 2009-12-15 Agere Systems Inc. Reduced leakage driver circuit and memory device employing same
US8169808B2 (en) 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
US7940541B2 (en) 2008-05-21 2011-05-10 Texas Instruments Incorporated Bit cell designs for ternary content addressable memory
TWI391946B (zh) 2008-09-18 2013-04-01 Realtek Semiconductor Corp 內容可定址記憶體
WO2010138639A2 (en) 2009-05-26 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Longest prefix match internet protocol content addressable memories and related methods
US7907432B2 (en) 2009-06-30 2011-03-15 Netlogic Microsystems, Inc. Content addressable memory device for simultaneously searching multiple flows
US8582338B1 (en) 2010-08-31 2013-11-12 Netlogic Microsystems, Inc. Ternary content addressable memory cell having single transistor pull-down stack
US8891273B2 (en) 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090310395A1 (en) * 2008-06-11 2009-12-17 Realtek Semiconductor Corp. Content-Addressable Memory

Also Published As

Publication number Publication date
CN104885159A (zh) 2015-09-02
CN104885159B (zh) 2019-04-19
US9082481B2 (en) 2015-07-14
US20140185349A1 (en) 2014-07-03
KR101557883B1 (ko) 2015-10-06
EP2939240B1 (en) 2016-08-17
JP6062578B2 (ja) 2017-01-18
EP2939240A1 (en) 2015-11-04
US20150085554A1 (en) 2015-03-26
US8958226B2 (en) 2015-02-17
WO2014105683A1 (en) 2014-07-03
TWI508069B (zh) 2015-11-11
JP2016106341A (ja) 2016-06-16
TW201440050A (zh) 2014-10-16
KR20150093245A (ko) 2015-08-17
JP2016506591A (ja) 2016-03-03

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