TWI508069B - 用於三態內容可定址記憶體(tcam)的靜態ｎａｎｄ單元 - Google Patents

用於三態內容可定址記憶體(tcam)的靜態ｎａｎｄ單元 Download PDF

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Publication number
TWI508069B
TWI508069B TW102148453A TW102148453A TWI508069B TW I508069 B TWI508069 B TW I508069B TW 102148453 A TW102148453 A TW 102148453A TW 102148453 A TW102148453 A TW 102148453A TW I508069 B TWI508069 B TW I508069B
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TW
Taiwan
Prior art keywords
pull
transistor
tcam
unit
mask
Prior art date
Application number
TW102148453A
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English (en)
Chinese (zh)
Other versions
TW201440050A (zh
Inventor
Esin Terzioglu
Nishith Desai
Rakesh Vattikonda
Changho Jung
Sei Seung Yoon
Original Assignee
Qualcomm Inc
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Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of TW201440050A publication Critical patent/TW201440050A/zh
Application granted granted Critical
Publication of TWI508069B publication Critical patent/TWI508069B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW102148453A 2012-12-28 2013-12-26 用於三態內容可定址記憶體(tcam)的靜態ｎａｎｄ單元 TWI508069B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/730,524 US8958226B2 (en) 2012-12-28 2012-12-28 Static NAND cell for ternary content addressable memory (TCAM)

Publications (2)

Publication Number Publication Date
TW201440050A TW201440050A (zh) 2014-10-16
TWI508069B true TWI508069B (zh) 2015-11-11

Family

ID=49918923

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102148453A TWI508069B (zh) 2012-12-28 2013-12-26 用於三態內容可定址記憶體(tcam)的靜態ｎａｎｄ單元

Country Status (7)

Country Link
US (2) US8958226B2 (enExample)
EP (1) EP2939240B1 (enExample)
JP (2) JP5866491B1 (enExample)
KR (1) KR101557883B1 (enExample)
CN (1) CN104885159B (enExample)
TW (1) TWI508069B (enExample)
WO (1) WO2014105683A1 (enExample)

Cited By (1)

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US9728258B1 (en) 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory

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US8891273B2 (en) 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US9832122B2 (en) 2013-11-05 2017-11-28 Cisco Technology, Inc. System and method for identification of large-data flows
US10778584B2 (en) 2013-11-05 2020-09-15 Cisco Technology, Inc. System and method for multi-path load balancing in network fabrics
US9769078B2 (en) 2013-11-05 2017-09-19 Cisco Technology, Inc. Dynamic flowlet prioritization
US9674086B2 (en) 2013-11-05 2017-06-06 Cisco Technology, Inc. Work conserving schedular based on ranking
US9655232B2 (en) 2013-11-05 2017-05-16 Cisco Technology, Inc. Spanning tree protocol (STP) optimization techniques
US9502111B2 (en) * 2013-11-05 2016-11-22 Cisco Technology, Inc. Weighted equal cost multipath routing
US9374294B1 (en) 2013-11-05 2016-06-21 Cisco Technology, Inc. On-demand learning in overlay networks
WO2016167821A1 (en) 2015-04-14 2016-10-20 Cambou Bertrand F Memory circuits using a blocking state
US9804974B2 (en) 2015-05-11 2017-10-31 Bertrand F. Cambou Memory circuit using dynamic random access memory arrays
US9588908B2 (en) 2015-06-02 2017-03-07 Bertrand F. Cambou Memory circuit using resistive random access memory arrays in a secure element
US9941008B1 (en) * 2017-03-23 2018-04-10 National Taiwan University Ternary content addressable memory device for software defined networking and method thereof
CN113971973B (zh) 2018-07-16 2025-09-02 蓝枪半导体有限责任公司 用于三态内容寻址存储器的控制电路
KR102505089B1 (ko) 2021-07-16 2023-02-28 연세대학교 산학협력단 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리
US12243574B2 (en) 2021-08-24 2025-03-04 Seoul National University R&Db Foundation Content addressable memory device and operating method thereof
KR102646177B1 (ko) 2021-08-24 2024-03-12 서울대학교산학협력단 내용 주소화 메모리 장치 및 그 동작 방법

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US7120040B2 (en) * 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7286379B1 (en) * 2005-09-08 2007-10-23 Lsi Corporation Content addressable memory (CAM) architecture and method of operating the same
US7355890B1 (en) * 2006-10-26 2008-04-08 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having NAND-type compare circuits
US7555594B2 (en) * 2004-07-22 2009-06-30 Netlogic Microsystems, Inc. Range representation in a content addressable memory (CAM) using an improved encoding scheme
US20090310395A1 (en) * 2008-06-11 2009-12-17 Realtek Semiconductor Corp. Content-Addressable Memory
US7940541B2 (en) * 2008-05-21 2011-05-10 Texas Instruments Incorporated Bit cell designs for ternary content addressable memory
US8125810B2 (en) * 2007-08-01 2012-02-28 Texas Instruments Incorporated Low power ternary content-addressable memory (TCAM)
US20120063189A1 (en) * 2009-05-26 2012-03-15 Arizona Board Of Regents For And On Behalf Of Arizona State University Longest prefix match internet protocol content addressable memories and related methods
US8169808B2 (en) * 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory

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US6044005A (en) 1999-02-03 2000-03-28 Sibercore Technologies Incorporated Content addressable memory storage device
US6574702B2 (en) 1999-02-23 2003-06-03 Netlogic Microsystems, Inc. Method and apparatus for determining an exact match in a content addressable memory device
US6499081B1 (en) 1999-02-23 2002-12-24 Netlogic Microsystems, Inc. Method and apparatus for determining a longest prefix match in a segmented content addressable memory device
US6411538B1 (en) 2000-11-28 2002-06-25 Silicon Access Networks Compact load-less static ternary CAM
US6400593B1 (en) * 2001-02-08 2002-06-04 Intregrated Device Technology, Inc. Ternary CAM cell with DRAM mask circuit
US6385070B1 (en) 2001-03-13 2002-05-07 Tality, L.P. Content Addressable Memory array, cell, and method using 5-transistor compare circuit and avoiding crowbar current
DE60210322T2 (de) 2001-12-28 2006-12-28 Mosaid Technologies Incorporated, Kanata Assoziativspeicherarchitektur mit geringem leistungsverbrauch
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US6760242B1 (en) 2002-04-10 2004-07-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein
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US6906937B1 (en) 2003-03-21 2005-06-14 Netlogic Microsystems, Inc. Bit line control circuit for a content addressable memory
US6900999B1 (en) 2003-06-30 2005-05-31 Integrated Device Technology, Inc. Ternary content addressable memory (TCAM) cells with small footprint size and efficient layout aspect ratio
US7050318B1 (en) 2004-10-01 2006-05-23 Netlogic Microsystems, Inc. Selective match line pre-charging in a CAM device using pre-compare operations
US7633830B2 (en) 2007-11-29 2009-12-15 Agere Systems Inc. Reduced leakage driver circuit and memory device employing same
TWI391946B (zh) 2008-09-18 2013-04-01 Realtek Semiconductor Corp 內容可定址記憶體
US7907432B2 (en) 2009-06-30 2011-03-15 Netlogic Microsystems, Inc. Content addressable memory device for simultaneously searching multiple flows
US8582338B1 (en) 2010-08-31 2013-11-12 Netlogic Microsystems, Inc. Ternary content addressable memory cell having single transistor pull-down stack
US8891273B2 (en) 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7120040B2 (en) * 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7555594B2 (en) * 2004-07-22 2009-06-30 Netlogic Microsystems, Inc. Range representation in a content addressable memory (CAM) using an improved encoding scheme
US7286379B1 (en) * 2005-09-08 2007-10-23 Lsi Corporation Content addressable memory (CAM) architecture and method of operating the same
US7355890B1 (en) * 2006-10-26 2008-04-08 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having NAND-type compare circuits
US8125810B2 (en) * 2007-08-01 2012-02-28 Texas Instruments Incorporated Low power ternary content-addressable memory (TCAM)
US8169808B2 (en) * 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
US7940541B2 (en) * 2008-05-21 2011-05-10 Texas Instruments Incorporated Bit cell designs for ternary content addressable memory
US20090310395A1 (en) * 2008-06-11 2009-12-17 Realtek Semiconductor Corp. Content-Addressable Memory
US20120063189A1 (en) * 2009-05-26 2012-03-15 Arizona Board Of Regents For And On Behalf Of Arizona State University Longest prefix match internet protocol content addressable memories and related methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728258B1 (en) 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory

Also Published As

Publication number Publication date
KR101557883B1 (ko) 2015-10-06
CN104885159B (zh) 2019-04-19
US20150085554A1 (en) 2015-03-26
TW201440050A (zh) 2014-10-16
US8958226B2 (en) 2015-02-17
EP2939240A1 (en) 2015-11-04
WO2014105683A1 (en) 2014-07-03
EP2939240B1 (en) 2016-08-17
JP6062578B2 (ja) 2017-01-18
JP2016106341A (ja) 2016-06-16
JP2016506591A (ja) 2016-03-03
JP5866491B1 (ja) 2016-02-17
CN104885159A (zh) 2015-09-02
KR20150093245A (ko) 2015-08-17
US20140185349A1 (en) 2014-07-03
US9082481B2 (en) 2015-07-14

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