KR101557883B1 - 터너리 컨텐츠 어드레스가능 메모리(tcam)를 위한 정적 nand 셀 - Google Patents

터너리 컨텐츠 어드레스가능 메모리(tcam)를 위한 정적 nand 셀 Download PDF

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KR101557883B1
KR101557883B1 KR1020157020112A KR20157020112A KR101557883B1 KR 101557883 B1 KR101557883 B1 KR 101557883B1 KR 1020157020112 A KR1020157020112 A KR 1020157020112A KR 20157020112 A KR20157020112 A KR 20157020112A KR 101557883 B1 KR101557883 B1 KR 101557883B1
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pull
transistor
cell
mask
key
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KR20150093245A (ko
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에신 테르지오글루
니시쓰 데사이
라케쉬 바티콘다
창호 중
세이 승 윤
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퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020157020112A 2012-12-28 2013-12-20 터너리 컨텐츠 어드레스가능 메모리(tcam)를 위한 정적 nand 셀 Expired - Fee Related KR101557883B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/730,524 2012-12-28
US13/730,524 US8958226B2 (en) 2012-12-28 2012-12-28 Static NAND cell for ternary content addressable memory (TCAM)
PCT/US2013/076848 WO2014105683A1 (en) 2012-12-28 2013-12-20 Static nand cell for ternary content addressable memory (tcam)

Publications (2)

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KR20150093245A KR20150093245A (ko) 2015-08-17
KR101557883B1 true KR101557883B1 (ko) 2015-10-06

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KR1020157020112A Expired - Fee Related KR101557883B1 (ko) 2012-12-28 2013-12-20 터너리 컨텐츠 어드레스가능 메모리(tcam)를 위한 정적 nand 셀

Country Status (7)

Country Link
US (2) US8958226B2 (enExample)
EP (1) EP2939240B1 (enExample)
JP (2) JP5866491B1 (enExample)
KR (1) KR101557883B1 (enExample)
CN (1) CN104885159B (enExample)
TW (1) TWI508069B (enExample)
WO (1) WO2014105683A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230012777A (ko) 2021-07-16 2023-01-26 연세대학교 산학협력단 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리

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US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory
US9769078B2 (en) 2013-11-05 2017-09-19 Cisco Technology, Inc. Dynamic flowlet prioritization
US9502111B2 (en) 2013-11-05 2016-11-22 Cisco Technology, Inc. Weighted equal cost multipath routing
US9655232B2 (en) 2013-11-05 2017-05-16 Cisco Technology, Inc. Spanning tree protocol (STP) optimization techniques
US9374294B1 (en) 2013-11-05 2016-06-21 Cisco Technology, Inc. On-demand learning in overlay networks
US9674086B2 (en) 2013-11-05 2017-06-06 Cisco Technology, Inc. Work conserving schedular based on ranking
US10778584B2 (en) 2013-11-05 2020-09-15 Cisco Technology, Inc. System and method for multi-path load balancing in network fabrics
US9832122B2 (en) 2013-11-05 2017-11-28 Cisco Technology, Inc. System and method for identification of large-data flows
EP3284093B1 (en) 2015-04-14 2021-08-04 Cambou, Bertrand, F. Memory circuits using a blocking state
EP3295331A4 (en) 2015-05-11 2019-04-17 Cambou, Bertrand, F. MEMORY SWITCHING USING DYNAMIC DIRECT ACCESS MEMORY ARRANGEMENTS
EP3304561B1 (en) 2015-06-02 2020-08-26 Cambou, Bertrand, F. Memory circuit using resistive random access memory arrays in a secure element
US9728258B1 (en) 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory
US9941008B1 (en) * 2017-03-23 2018-04-10 National Taiwan University Ternary content addressable memory device for software defined networking and method thereof
CN110729013B (zh) 2018-07-16 2021-10-29 蓝枪半导体有限责任公司 用于三态内容寻址存储器的控制电路
US12243574B2 (en) 2021-08-24 2025-03-04 Seoul National University R&Db Foundation Content addressable memory device and operating method thereof
KR102646177B1 (ko) 2021-08-24 2024-03-12 서울대학교산학협력단 내용 주소화 메모리 장치 및 그 동작 방법

Citations (4)

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US6400593B1 (en) 2001-02-08 2002-06-04 Intregrated Device Technology, Inc. Ternary CAM cell with DRAM mask circuit
WO2003056565A1 (en) 2001-12-31 2003-07-10 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
US7050318B1 (en) 2004-10-01 2006-05-23 Netlogic Microsystems, Inc. Selective match line pre-charging in a CAM device using pre-compare operations
US20090141580A1 (en) 2007-11-29 2009-06-04 Donald Albert Evans Reduced Leakage Driver Circuit and Memory Device Employing Same

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US6574702B2 (en) 1999-02-23 2003-06-03 Netlogic Microsystems, Inc. Method and apparatus for determining an exact match in a content addressable memory device
US6499081B1 (en) 1999-02-23 2002-12-24 Netlogic Microsystems, Inc. Method and apparatus for determining a longest prefix match in a segmented content addressable memory device
US6411538B1 (en) 2000-11-28 2002-06-25 Silicon Access Networks Compact load-less static ternary CAM
US6385070B1 (en) 2001-03-13 2002-05-07 Tality, L.P. Content Addressable Memory array, cell, and method using 5-transistor compare circuit and avoiding crowbar current
ATE322075T1 (de) 2001-12-28 2006-04-15 Mosaid Technologies Inc Assoziativspeicherarchitektur mit geringem leistungsverbrauch
TWI302706B (en) 2002-01-31 2008-11-01 Mosaid Technologies Inc Circuit and method for reducing power usage in a content addressable memory
US6760242B1 (en) 2002-04-10 2004-07-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein
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US6906937B1 (en) 2003-03-21 2005-06-14 Netlogic Microsystems, Inc. Bit line control circuit for a content addressable memory
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US7120040B2 (en) 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7555594B2 (en) 2004-07-22 2009-06-30 Netlogic Microsystems, Inc. Range representation in a content addressable memory (CAM) using an improved encoding scheme
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US7355890B1 (en) 2006-10-26 2008-04-08 Integrated Device Technology, Inc. Content addressable memory (CAM) devices having NAND-type compare circuits
US8125810B2 (en) 2007-08-01 2012-02-28 Texas Instruments Incorporated Low power ternary content-addressable memory (TCAM)
US8169808B2 (en) 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
US7940541B2 (en) 2008-05-21 2011-05-10 Texas Instruments Incorporated Bit cell designs for ternary content addressable memory
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TWI391946B (zh) 2008-09-18 2013-04-01 Realtek Semiconductor Corp 內容可定址記憶體
WO2010138639A2 (en) 2009-05-26 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Longest prefix match internet protocol content addressable memories and related methods
US7907432B2 (en) 2009-06-30 2011-03-15 Netlogic Microsystems, Inc. Content addressable memory device for simultaneously searching multiple flows
US8582338B1 (en) 2010-08-31 2013-11-12 Netlogic Microsystems, Inc. Ternary content addressable memory cell having single transistor pull-down stack
US8891273B2 (en) 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400593B1 (en) 2001-02-08 2002-06-04 Intregrated Device Technology, Inc. Ternary CAM cell with DRAM mask circuit
WO2003056565A1 (en) 2001-12-31 2003-07-10 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
US7050318B1 (en) 2004-10-01 2006-05-23 Netlogic Microsystems, Inc. Selective match line pre-charging in a CAM device using pre-compare operations
US20090141580A1 (en) 2007-11-29 2009-06-04 Donald Albert Evans Reduced Leakage Driver Circuit and Memory Device Employing Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230012777A (ko) 2021-07-16 2023-01-26 연세대학교 산학협력단 강유전체 소자 기반 nand 타입 내용 주소화 메모리 셀 및 이를 포함하는 내용 주소화 메모리

Also Published As

Publication number Publication date
CN104885159A (zh) 2015-09-02
CN104885159B (zh) 2019-04-19
US9082481B2 (en) 2015-07-14
US20140185349A1 (en) 2014-07-03
EP2939240B1 (en) 2016-08-17
JP6062578B2 (ja) 2017-01-18
EP2939240A1 (en) 2015-11-04
US20150085554A1 (en) 2015-03-26
US8958226B2 (en) 2015-02-17
WO2014105683A1 (en) 2014-07-03
TWI508069B (zh) 2015-11-11
JP2016106341A (ja) 2016-06-16
TW201440050A (zh) 2014-10-16
JP5866491B1 (ja) 2016-02-17
KR20150093245A (ko) 2015-08-17
JP2016506591A (ja) 2016-03-03

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