JP2013234941A - センサーチップ並びにセンサーカートリッジおよび検出装置 - Google Patents

センサーチップ並びにセンサーカートリッジおよび検出装置 Download PDF

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Publication number
JP2013234941A
JP2013234941A JP2012108273A JP2012108273A JP2013234941A JP 2013234941 A JP2013234941 A JP 2013234941A JP 2012108273 A JP2012108273 A JP 2012108273A JP 2012108273 A JP2012108273 A JP 2012108273A JP 2013234941 A JP2013234941 A JP 2013234941A
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Japan
Prior art keywords
metal
light
dielectric layer
nanobody
sensor chip
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Withdrawn
Application number
JP2012108273A
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English (en)
Japanese (ja)
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JP2013234941A5 (enExample
Inventor
Tetsuo Mano
哲雄 眞野
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Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012108273A priority Critical patent/JP2013234941A/ja
Priority to EP13787635.5A priority patent/EP2848920A4/en
Priority to PCT/JP2013/002922 priority patent/WO2013168401A1/ja
Priority to CN201380024597.7A priority patent/CN104303046A/zh
Priority to US14/400,049 priority patent/US20150098085A1/en
Publication of JP2013234941A publication Critical patent/JP2013234941A/ja
Publication of JP2013234941A5 publication Critical patent/JP2013234941A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03—Cuvette constructions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2012108273A 2012-05-10 2012-05-10 センサーチップ並びにセンサーカートリッジおよび検出装置 Withdrawn JP2013234941A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012108273A JP2013234941A (ja) 2012-05-10 2012-05-10 センサーチップ並びにセンサーカートリッジおよび検出装置
EP13787635.5A EP2848920A4 (en) 2012-05-10 2013-05-02 SENSOR CHIP, SENSOR CARTRIDGE AND DETECTION DEVICE
PCT/JP2013/002922 WO2013168401A1 (ja) 2012-05-10 2013-05-02 センサーチップ並びにセンサーカートリッジおよび検出装置
CN201380024597.7A CN104303046A (zh) 2012-05-10 2013-05-02 传感器芯片、传感器盒及检测装置
US14/400,049 US20150098085A1 (en) 2012-05-10 2013-05-02 Sensor chip, sensor cartridge, and detection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012108273A JP2013234941A (ja) 2012-05-10 2012-05-10 センサーチップ並びにセンサーカートリッジおよび検出装置

Publications (2)

Publication Number Publication Date
JP2013234941A true JP2013234941A (ja) 2013-11-21
JP2013234941A5 JP2013234941A5 (enExample) 2015-06-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012108273A Withdrawn JP2013234941A (ja) 2012-05-10 2012-05-10 センサーチップ並びにセンサーカートリッジおよび検出装置

Country Status (5)

Country Link
US (1) US20150098085A1 (enExample)
EP (1) EP2848920A4 (enExample)
JP (1) JP2013234941A (enExample)
CN (1) CN104303046A (enExample)
WO (1) WO2013168401A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015212674A (ja) * 2014-05-07 2015-11-26 セイコーエプソン株式会社 分析装置及び電子機器
JP2017514148A (ja) * 2014-04-08 2017-06-01 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6365817B2 (ja) * 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
JP2016142617A (ja) * 2015-02-02 2016-08-08 セイコーエプソン株式会社 電場増強素子、分析装置、及び電子機器
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置
EP3446107B1 (en) * 2016-07-22 2021-03-31 Hewlett-Packard Development Company, L.P. Activatable surface enhanced raman spectroscopy sensor stage
WO2018164198A1 (ja) * 2017-03-09 2018-09-13 Ｓｃｉｖａｘ株式会社 電磁波増強素子およびその製造方法並びにアミノ酸配列決定方法
US10570984B1 (en) * 2017-06-28 2020-02-25 United Launch Alliance, L.L.C. Asymmetrically-shaped isolator
US11959859B2 (en) 2021-06-02 2024-04-16 Edwin Thomas Carlen Multi-gas detection system and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008014933A (ja) * 2006-06-08 2008-01-24 Fujifilm Corp ラマン分光用デバイス、及びラマン分光装置
US7957062B2 (en) * 2007-02-06 2011-06-07 Sony Corporation Polarizing element and liquid crystal projector
JP5397577B2 (ja) * 2007-03-05 2014-01-22 オムロン株式会社 表面プラズモン共鳴センサ及び当該センサ用チップ
US7869032B2 (en) * 2007-04-05 2011-01-11 The Board Of Trustees Of The University Of Illinois Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture
US20080316599A1 (en) * 2007-06-22 2008-12-25 Bin Wang Reflection-Repressed Wire-Grid Polarizer
JP4412372B2 (ja) * 2007-09-12 2010-02-10 セイコーエプソン株式会社 偏光素子の製造方法
JP4535121B2 (ja) * 2007-11-28 2010-09-01 セイコーエプソン株式会社 光学素子及びその製造方法、液晶装置、電子機器
EP2406601A4 (en) * 2009-03-13 2012-11-28 Hewlett Packard Development Co BROADBAND STRUCTURES FOR SURFACE-ADVANCED RAMAN SPECTROSCOPY
JP5621394B2 (ja) 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2325635B1 (en) * 2009-11-19 2017-05-03 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
CN102483355A (zh) * 2010-01-29 2012-05-30 惠普发展公司，有限责任合伙企业 自收集sers基板
JP5609241B2 (ja) * 2010-04-28 2014-10-22 セイコーエプソン株式会社 分光方法及び分析装置
JP5545144B2 (ja) * 2010-09-14 2014-07-09 セイコーエプソン株式会社 光デバイスユニット及び検出装置
JP6100492B2 (ja) * 2012-09-05 2017-03-22 デクセリアルズ株式会社 偏光素子、プロジェクター及び偏光素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017514148A (ja) * 2014-04-08 2017-06-01 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ
JP2020098212A (ja) * 2014-04-08 2020-06-25 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ
US10930983B2 (en) 2014-04-08 2021-02-23 Insplorion Sensor Systems Ab Battery with sensor
JP2015212674A (ja) * 2014-05-07 2015-11-26 セイコーエプソン株式会社 分析装置及び電子機器

Also Published As

Publication number Publication date
EP2848920A1 (en) 2015-03-18
US20150098085A1 (en) 2015-04-09
EP2848920A4 (en) 2016-01-20
CN104303046A (zh) 2015-01-21
WO2013168401A1 (ja) 2013-11-14

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