CN104303046A - 传感器芯片、传感器盒及检测装置 - Google Patents

传感器芯片、传感器盒及检测装置 Download PDF

Info

Publication number
CN104303046A
CN104303046A CN201380024597.7A CN201380024597A CN104303046A CN 104303046 A CN104303046 A CN 104303046A CN 201380024597 A CN201380024597 A CN 201380024597A CN 104303046 A CN104303046 A CN 104303046A
Authority
CN
China
Prior art keywords
metal
light
dielectric layer
lattice
sensor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380024597.7A
Other languages
English (en)
Chinese (zh)
Inventor
真野哲雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN104303046A publication Critical patent/CN104303046A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03—Cuvette constructions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers

Landscapes

  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN201380024597.7A 2012-05-10 2013-05-02 传感器芯片、传感器盒及检测装置 Pending CN104303046A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012108273A JP2013234941A (ja) 2012-05-10 2012-05-10 センサーチップ並びにセンサーカートリッジおよび検出装置
JP2012-108273 2012-05-10
PCT/JP2013/002922 WO2013168401A1 (ja) 2012-05-10 2013-05-02 センサーチップ並びにセンサーカートリッジおよび検出装置

Publications (1)

Publication Number Publication Date
CN104303046A true CN104303046A (zh) 2015-01-21

Family

ID=49550465

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380024597.7A Pending CN104303046A (zh) 2012-05-10 2013-05-02 传感器芯片、传感器盒及检测装置

Country Status (5)

Country Link
US (1) US20150098085A1 (enExample)
EP (1) EP2848920A4 (enExample)
JP (1) JP2013234941A (enExample)
CN (1) CN104303046A (enExample)
WO (1) WO2013168401A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073558A (zh) * 2016-07-22 2018-12-21 惠普发展公司，有限责任合伙企业 可激活的表面增强拉曼光谱传感器平台

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6365817B2 (ja) * 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
WO2015154961A1 (en) 2014-04-08 2015-10-15 Insplorion Ab Battery with sensor
JP6544504B2 (ja) * 2014-05-07 2019-07-17 セイコーエプソン株式会社 分析装置及び電子機器
JP2016142617A (ja) * 2015-02-02 2016-08-08 セイコーエプソン株式会社 電場増強素子、分析装置、及び電子機器
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置
WO2018164198A1 (ja) * 2017-03-09 2018-09-13 Ｓｃｉｖａｘ株式会社 電磁波増強素子およびその製造方法並びにアミノ酸配列決定方法
US10570984B1 (en) * 2017-06-28 2020-02-25 United Launch Alliance, L.L.C. Asymmetrically-shaped isolator
US11959859B2 (en) 2021-06-02 2024-04-16 Edwin Thomas Carlen Multi-gas detection system and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080246961A1 (en) * 2007-04-05 2008-10-09 The Board Of Trustees Of The University Of Illinois Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture
CN102072878A (zh) * 2009-11-19 2011-05-25 精工爱普生株式会社 传感器芯片、传感器盒及分析装置
JP2011232186A (ja) * 2010-04-28 2011-11-17 Seiko Epson Corp 光デバイス、分析装置及び分光方法
JP2012063156A (ja) * 2010-09-14 2012-03-29 Seiko Epson Corp 光デバイスユニット及び検出装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008014933A (ja) * 2006-06-08 2008-01-24 Fujifilm Corp ラマン分光用デバイス、及びラマン分光装置
US7957062B2 (en) * 2007-02-06 2011-06-07 Sony Corporation Polarizing element and liquid crystal projector
JP5397577B2 (ja) * 2007-03-05 2014-01-22 オムロン株式会社 表面プラズモン共鳴センサ及び当該センサ用チップ
US20080316599A1 (en) * 2007-06-22 2008-12-25 Bin Wang Reflection-Repressed Wire-Grid Polarizer
JP4412372B2 (ja) * 2007-09-12 2010-02-10 セイコーエプソン株式会社 偏光素子の製造方法
JP4535121B2 (ja) * 2007-11-28 2010-09-01 セイコーエプソン株式会社 光学素子及びその製造方法、液晶装置、電子機器
EP2406601A4 (en) * 2009-03-13 2012-11-28 Hewlett Packard Development Co BROADBAND STRUCTURES FOR SURFACE-ADVANCED RAMAN SPECTROSCOPY
JP5621394B2 (ja) 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
CN102483355A (zh) * 2010-01-29 2012-05-30 惠普发展公司，有限责任合伙企业 自收集sers基板
JP6100492B2 (ja) * 2012-09-05 2017-03-22 デクセリアルズ株式会社 偏光素子、プロジェクター及び偏光素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080246961A1 (en) * 2007-04-05 2008-10-09 The Board Of Trustees Of The University Of Illinois Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture
CN102072878A (zh) * 2009-11-19 2011-05-25 精工爱普生株式会社 传感器芯片、传感器盒及分析装置
EP2325635A2 (en) * 2009-11-19 2011-05-25 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP2011232186A (ja) * 2010-04-28 2011-11-17 Seiko Epson Corp 光デバイス、分析装置及び分光方法
JP2012063156A (ja) * 2010-09-14 2012-03-29 Seiko Epson Corp 光デバイスユニット及び検出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073558A (zh) * 2016-07-22 2018-12-21 惠普发展公司，有限责任合伙企业 可激活的表面增强拉曼光谱传感器平台
CN109073558B (zh) * 2016-07-22 2021-02-12 惠普发展公司，有限责任合伙企业 可激活的表面增强拉曼光谱传感器平台

Also Published As

Publication number Publication date
EP2848920A1 (en) 2015-03-18
US20150098085A1 (en) 2015-04-09
EP2848920A4 (en) 2016-01-20
WO2013168401A1 (ja) 2013-11-14
JP2013234941A (ja) 2013-11-21

Similar Documents

Publication Publication Date Title
CN104303046A (zh) 传感器芯片、传感器盒及检测装置
CN103217402A (zh) 样品分析元件及检测装置
TWI567375B (zh) 光元件、分析裝置及分光方法
CN102401794B (zh) 光器件单元及检测装置
US9057697B2 (en) Optical device with propagating and localized surface plasmons and detection apparatus
JP2010531995A (ja) 電界強化構造、及び該構造を利用した検出装置
JP6365817B2 (ja) 分析装置、及び電子機器
CN104321639A (zh) 试样分析元件以及检测装置
JP2012063154A (ja) 検出装置
JP2015152492A (ja) 分析装置、及び電子機器
US9222889B2 (en) Sample analysis device, testing apparatus, and sensor cartridge
JP5796395B2 (ja) 光学デバイス、検出装置及び検出方法
CN103018211A (zh) 传感器芯片、传感器盒及分析装置
US20150109619A1 (en) Sample analysis element and detection device
US20160223466A1 (en) Electric-field enhancement element, analysis device, and electronic apparatus
JP2013195204A (ja) 試料分析基板および検出装置
JP2016004018A (ja) ラマン分光装置および電子機器
JP6521215B2 (ja) 分析装置、及び電子機器
JP2017040609A (ja) センサーチップ及びその製造方法並びに分析装置
JP2016197069A (ja) 電場増強素子、分析装置、及び電子機器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150121