JP2013229580A - 第3の反射器を組み込んだ面発光レーザ - Google Patents
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- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
Abstract
【解決手段】垂直外部共振器型面発光レーザ(VECSEL)構造体は、ポンプ波長λpumpで照射光を発光するよう設定されたポンプ光源125と、外付け外部接合反射器と、分配ブラッグ反射器(DBR、)と、DBRと外部接合反射器との間に配置された活性領域と、を含む。活性領域は、レーザ波長λlaseで照射光135を発光するよう設定される。VECSEL構造体は、利得素子と外付け外部接合反射器との間に配置された部分的反射素子(PRE)も含む。PREは、レーザ波長の照射光に対して約30%〜約70%の反射率と、ポンプ波長の照射光に対して約30%〜約70%の間の反射率と、を有する。
【選択図】図1
Description
但し、OT(エンドスペーサ)、OT(厚いスペーサ)、OT(薄いスペーサ)、OT(Well)は、エンドスペーサ、厚いスペーサ、薄いスペーサ、光学井戸(optical well)の光学的厚さをそれぞれ示し、Nwellsは、本明細書では各周期内の量子井戸の数であり、m’とmは1以上の整数である。一般には、m’=m=1である。いくつかの例では、m又はm’が、2以上に増えると有益であり得る。
OT(エンドスペーサ)=ISnGaN、但しnGaNはGaNの屈折率である。
OT(井戸)=WnInGaN、但し、nInGaNは、InGaNの屈折率である。
OT(薄いスペーサ)=TnGaN、及びOT(厚いスペーサ)=LnGaN。
OTに対する代数を、上記のm=m’=1に関する等式に当てはめると、
ISnGaN+1/2NwellsWnInGaN+1/2(Nwells−1)TnGaN=1/2λlase、及び
LnGaN+NwellsWnInGaN+(Nwells−1)TnGaN=1/2λlaseとなる。
最小のエンドスペーサ厚さは、IS=1/2λlase−1/2NwellsWnInGaN−1/2(Nwells−1)TnGaNとなる。いくつかのケースでは、より厚いエンドスペーサを用いることができる。1/2λlase/nGaNの整数の倍数、Kをエンドスペーサの厚さに加えることにより、エンドスペーサの厚さを増やすことができる。
キャリア密度に対する利得の依存性は下記の等式で決めることができる。
Claims (10)
- 垂直外部共振器型面発光レーザ(VECSEL)構造体であって
ポンプ波長λpumpで照射光を放出するよう設定されたポンプ光源と、
外付け外部接合反射器と、
分配ブラッグ反射器(DBR)と、
前記DBRと前記外部接合反射器との間に配置された活性領域であって、レーザ波長λlaseで照射光を発光するよう設定された活性領域と、
利得素子と前記外付け外部接合反射器との間に配置された部分的反射素子(PRE)であって、前記レーザ波長の照射光に関して約30%〜約70%の反射率を有し、前記ポンプ波長での照射光に関して約30%〜約70%の反射率を有する部分的反射素子と、を含む構造体。 - 前記PREが、III−V族の材料層の格子を含む、請求項1に記載の構造体。
- 前記VECSEL構造体の動作中、前記PREが、前記基板内の前記平均E2電界の2倍より高い前記活性領域内のピークE2電界を提供するよう設定される、請求項1に記載の構造体。
- 前記ポンプ光源により発光される前記照射光が、sin(θ)=nsubsin[cos−1(λpump/λlase)]で表るような角度θで前記基板の表面に入射するよう、前記ポンプ光源が配置され、前記基板の前記屈折率はnsubである、請求項1に記載の構造体。
- 前記PREが、複数の層の組を含む分配ブラッグ反射器を含み、各層の組がAlGaNの第1の層とGaNの第2の層とを含む、請求項1に記載の構造体。
- 層の組の数は、約2組〜約20組の間である、請求項5に記載の構造体。
- 前記基板と前記外部接合反射器との間に反射防止膜が配置され、前記反射防止膜が、tAR=(λpump/4nAR)cos[sin−1((1/nAR)sinθ)]で表るような屈折率nARと厚さtARとを有する、請求項1に記載の構造体。
- 前記活性領域が、1つ以上の量子構造体を含み、各量子井戸構造体が、
1つ以上のInxGa1−x量子井戸を含み、ここで、xは0.10≦x≦0.5であり、各量子井戸は、厚さWを有し、且つ、波長λlaseのレーザ照射光を発光するよう設定される、請求項1に記載の構造体。 - 各量子井戸構造体が、量子井戸の各組の間に配置された、厚さTの薄いGaNスペーサ層を有する2つ以上の量子井戸を含み、
各活性領域素子が、量子井戸構造体の各組の間に配置された、厚さTよりも大きい厚さLの、厚いGaNスペーサ層を有する2つ以上の量子井戸構造体を含む、請求項8に記載の構造体。 - 厚さISのGaNのエンドスペーサ層をさらに含み、前記GaNのエンドスペーサ層が、前記PREと、前記量子井戸構造体のうちの1つと、の間に配置され、前記レーザ照射光の定在波の腹膜が、前記量子井戸構造体の前記量子井戸を覆うよう、前記厚さW、T、L、ISが設定される、請求項9に記載の構造体。
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US13/427,105 US9112331B2 (en) | 2012-03-22 | 2012-03-22 | Surface emitting laser incorporating third reflector |
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JP2017152665A (ja) * | 2016-02-25 | 2017-08-31 | 日本碍子株式会社 | 面発光素子、外部共振器型垂直面発光レーザー、および面発光素子の製造方法 |
US10541514B2 (en) | 2016-02-25 | 2020-01-21 | Ngk Insulators, Ltd. | Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device |
JP2021527945A (ja) * | 2018-06-19 | 2021-10-14 | エクセリタス テクノロジーズ コーポレイション | チューナブルvcsel内の量子井戸配置 |
WO2023167076A1 (ja) * | 2022-03-01 | 2023-09-07 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
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US9780532B1 (en) | 2016-11-21 | 2017-10-03 | Palo Alto Research Center Incorporated | Vertical external cavity surface emitting laser utilizing an external micromirror array |
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GB2500489A (en) | 2013-09-25 |
GB201305179D0 (en) | 2013-05-01 |
JP5966140B2 (ja) | 2016-08-10 |
CN103326240A (zh) | 2013-09-25 |
US9112331B2 (en) | 2015-08-18 |
GB2500489B (en) | 2018-09-26 |
CN103326240B (zh) | 2018-09-18 |
DE102013204644A1 (de) | 2013-09-26 |
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US20130343420A1 (en) | 2013-12-26 |
TWI572103B (zh) | 2017-02-21 |
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