JP5374772B2 - 光電子デバイスおよびその製造方法 - Google Patents
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- 230000005693 optoelectronics Effects 0.000 title description 12
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 157
- 230000003287 optical effect Effects 0.000 claims description 86
- 239000006185 dispersion Substances 0.000 claims description 34
- 230000006641 stabilisation Effects 0.000 claims description 32
- 238000011105 stabilization Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 20
- 239000000969 carrier Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000001443 photoexcitation Effects 0.000 claims description 3
- 230000001143 conditioned effect Effects 0.000 claims 1
- 238000005424 photoluminescence Methods 0.000 claims 1
- 238000000103 photoluminescence spectrum Methods 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 230000001066 destructive effect Effects 0.000 abstract description 4
- 238000001748 luminescence spectrum Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 193
- 238000010586 diagram Methods 0.000 description 83
- 239000000463 material Substances 0.000 description 59
- 239000012535 impurity Substances 0.000 description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 41
- 238000000985 reflectance spectrum Methods 0.000 description 28
- 230000005855 radiation Effects 0.000 description 26
- 238000005253 cladding Methods 0.000 description 23
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 20
- 238000000295 emission spectrum Methods 0.000 description 18
- 238000002310 reflectometry Methods 0.000 description 18
- 238000001228 spectrum Methods 0.000 description 16
- 239000006117 anti-reflective coating Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 10
- 108091079177 miR-1750 stem-loop Proteins 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 108091055799 miR-1702 stem-loop Proteins 0.000 description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 108091089534 miR-708 stem-loop Proteins 0.000 description 6
- 108091076465 miR-1408 stem-loop Proteins 0.000 description 5
- 108091075997 miR-602 stem-loop Proteins 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 108091081071 miR-1758 stem-loop Proteins 0.000 description 4
- 108091043317 miR-308 stem-loop Proteins 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 108091081223 miR-1650 stem-loop Proteins 0.000 description 3
- 108091030789 miR-302 stem-loop Proteins 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 108091050111 miR-1458 stem-loop Proteins 0.000 description 2
- 108091054658 miR-2350 stem-loop Proteins 0.000 description 2
- 108091090656 miR-2360 stem-loop Proteins 0.000 description 2
- 108091024722 miR822 stem-loop Proteins 0.000 description 2
- 108091029475 miR828 stem-loop Proteins 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 108091047524 miR-1452 stem-loop Proteins 0.000 description 1
- 108091063854 miR-1658 stem-loop Proteins 0.000 description 1
- 108091032324 miR-2302 stem-loop Proteins 0.000 description 1
- 108091067094 miR-2362 stem-loop Proteins 0.000 description 1
- 108091059614 miR908 stem-loop Proteins 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Description
Claims (12)
- 波長安定化光を生成する装置であって、
a)発光デバイスを含み、
前記発光デバイスは、さらに、
i)広い波長範囲および反射器の表面の垂直方向から光が傾斜する際の広範囲の入射角度で反射帯域を提供する、少なくとも1つの第1反射器と、
ii)少なくとも1つの第1共振器と、
iii)p−n接合部を含む能動素子であって、前記p−n接合部は活性領域を含み、前記活性領域は、非平衡キャリアが注入されたときに光を生成することができると共に、広いスペクトルのフォトルミネセンスを有するものである、能動素子と、
iv)前記活性領域内への非平衡キャリアの注入を行う注入装置と、
v)前記p−n接合部の平面と平行に伸長する出口平面とを含み、
前記発光デバイスは、前記出口平面に垂直な方向に対して傾斜している複数の光モードの中で、及び前記活性領域のフォトルミネセンススペクトルによって規定される波長範囲内で光を生成するように調整され、かつ、前記生成された光は、波長選択的ではなく、さらに、
b)前記出口平面に隣接して配設される、少なくとも1つの第2共振器と、
c)前記出口平面の反対側において、前記少なくとも1つの第2共振器に隣接して配設される、少なくとも1つの第2反射器と、を含み、
前記少なくとも1つの第1反射器は、
(i)多層干渉反射器と、
(ii)全内部反射に基づく反射器とから成る群から選択され、
前記発光デバイスによって生成されて、前記出口平面から出射する前記光は、前記少なくとも1つの第2共振器を通って伝搬し、前記少なくとも1つの第2反射器によって反射されて、前記少なくとも1つの第2共振器に送り返され、前記活性領域に到達することで、位相整合条件が、1つの選択波長、またはいくつかの選択波長において満たされ、
横軸をモード角とし縦軸を波長としたときの前記第1共振器の傾斜光モードの分散法則が、横軸をモード角とし縦軸を波長としたときの前記第2共振器のいくつかの傾斜光モードの分散法則と交差し、一つまたはいくつかの選択波長で前記第2共振器から前記第1共振器へ正帰還を提供する手段を生成するよう、前記第1共振器と前記第2共振器が調整され、
前記1つの選択波長、またはいくつかの選択波長は、前記装置の波長安定化動作を規定するものである、波長安定化光を生成する装置。 - 前記発光デバイスは、
a)発光ダイオードと、
b)超光発光ダイオードと、
c)半導体ダイオードレーザーと、
d)半導体光増幅器とから成る群から選択される、請求項1に記載の波長安定化光を生成する装置。 - 前記活性領域への非平衡キャリアの注入を行う前記注入装置は、
a)前記活性領域の光励起を行う光励起装置と、
b)前記活性領域への電流注入を行う電流注入装置とから成る群から選択される、請求項1に記載の波長安定化光を生成する装置。 - 基板をさらに含む、請求項1に記載の波長安定化光を生成する装置。
- 前記波長安定化光を生成する装置は、
a)波長安定化発光ダイオードと、
b)波長安定化超光発光ダイオードと、
c)波長安定化半導体ダイオードレーザーと、
d)半導体光増幅器とから成る群から選択される、請求項1に記載の波長安定化光を生成する装置。 - 前記発光デバイスは、遠距離場区域によって、前記少なくとも1つの第2共振器と光学的に結合される、請求項5に記載の波長安定化光を生成する装置。
- 前記発光デバイスは、近距離場区域によって、前記少なくとも1つの第2共振器と光学的に結合される、請求項5に記載の波長安定化光を生成する装置。
- 前記発光デバイスは、エピタキシャルに、前記少なくとも1つの第2共振器と光学的に結合される、請求項1に記載の波長安定化光を生成する装置。
- 前記少なくとも1つの第2共振器は基板である、請求項1に記載の波長安定化光を生成する装置。
- 前記少なくとも1つの第2反射器は、前記基板の背面である、請求項9に記載の波長安定化光を生成する装置。
- d)前記波長安定化光を生成する装置の外部に配置され、周波数変換を行うことができる非線形要素をさらに含み、
前記波長安定化光は、波長安定化一次光であり、
前記周波数変換を行うことができる非線形要素内の前記波長安定化一次光は、より高次の高調波の波長安定化光に変換され、
前記周波数変換を行うことができる非線形要素は、非線形結晶である、請求項1に記載の波長安定化光を生成する装置。 - d)周波数変換を行うことができる非線形要素をさらに含み、
前記周波数変換を行うことができる非線形要素は、
a)前記発光デバイスを含む、少なくとも1つの層と、
b)前記少なくとも1つの第2共振器を含む、少なくとも1つの層と、
c)前記少なくとも1つの第2反射器を含む、少なくとも1つの層と、
d)a)からc)の任意の組み合わせとから成る群から選択され、
前記波長安定化光は、波長安定化一次光であり、
前記生成された一次光の周波数変換によって取得された波長における少なくとも1つの光モードが、低損失を有することで、前記装置は、より高次の高調波の波長で光を放射することができ、前記光は、周波数変換によって取得されたものであり、
より高次の高調波で放射された光は、より高次の高調波で放射される波長安定化光である、請求項8に記載の波長安定化光を生成する装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81405306P | 2006-06-16 | 2006-06-16 | |
US11/453,980 | 2006-06-16 | ||
US60/814,053 | 2006-06-16 | ||
US11/453,980 US7421001B2 (en) | 2006-06-16 | 2006-06-16 | External cavity optoelectronic device |
US11/648,551 | 2007-01-03 | ||
US11/648,551 US7583712B2 (en) | 2006-06-16 | 2007-01-03 | Optoelectronic device and method of making same |
PCT/IB2007/004283 WO2008041138A2 (en) | 2006-06-16 | 2007-06-06 | Coupled cavity ld with tilted wave propagation |
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US7949031B2 (en) * | 2006-06-16 | 2011-05-24 | Pbc Lasers Gmbh | Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers |
US7580595B1 (en) | 2008-05-09 | 2009-08-25 | Technische Universitaet Berlin | Data transmission optoelectric device |
WO2010060998A2 (en) * | 2008-11-28 | 2010-06-03 | Pbc Lasers Gmbh | Method for improvement of beam quality and wavelength stabilized operation of a semiconductor diode laser with an extended waveguide |
JP6129160B2 (ja) * | 2011-05-16 | 2017-05-17 | バーレイス テクノロジーズ エルエルシー | 改良された共振器光電子工学装置及びその製作方法 |
JP5731996B2 (ja) * | 2012-02-21 | 2015-06-10 | 富士フイルム株式会社 | 半導体発光素子 |
JP5777164B2 (ja) * | 2012-08-24 | 2015-09-09 | 日本電信電話株式会社 | 分散補償器 |
EP2973751A4 (en) * | 2013-03-15 | 2016-11-16 | Gary Wayne Jones | CONVERSION DEVICE FOR SPECTRAL ENVIRONMENTAL LIGHT |
US9551468B2 (en) | 2013-12-10 | 2017-01-24 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
US10288233B2 (en) | 2013-12-10 | 2019-05-14 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
US11031751B2 (en) | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
JP6747910B2 (ja) | 2016-08-10 | 2020-08-26 | 浜松ホトニクス株式会社 | 発光装置 |
US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
JP6747922B2 (ja) * | 2016-09-07 | 2020-08-26 | 浜松ホトニクス株式会社 | 半導体発光素子及び発光装置 |
US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
US11637409B2 (en) | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
US11626709B2 (en) | 2017-12-08 | 2023-04-11 | Hamamatsu Photonics K.K. | Light-emitting device and production method for same |
JP2021174928A (ja) * | 2020-04-28 | 2021-11-01 | 住友電気工業株式会社 | 光学装置 |
DE102021121115A1 (de) * | 2021-08-13 | 2023-02-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Spiegel für einen laser, laser und laserbauteil |
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US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
US20050040410A1 (en) * | 2002-02-12 | 2005-02-24 | Nl-Nanosemiconductor Gmbh | Tilted cavity semiconductor optoelectronic device and method of making same |
US7031360B2 (en) * | 2002-02-12 | 2006-04-18 | Nl Nanosemiconductor Gmbh | Tilted cavity semiconductor laser (TCSL) and method of making same |
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