JP4855038B2 - ファンネル構造のvecsel - Google Patents
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- JP4855038B2 JP4855038B2 JP2005300330A JP2005300330A JP4855038B2 JP 4855038 B2 JP4855038 B2 JP 4855038B2 JP 2005300330 A JP2005300330 A JP 2005300330A JP 2005300330 A JP2005300330 A JP 2005300330A JP 4855038 B2 JP4855038 B2 JP 4855038B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
202 第1基板、
204 n−DBR層、
206 活性領域、
207 絶縁層、
208 p−DBR層、
210 n−ドーピングされたガリウムヒ素(n−GaAs)層、
212 p−ドーピングされたガリウムヒ素(p−GaAs)層、
214 上部電極、
216 開口、
218 キャリア伝導、
220 電流注入領域。
Claims (23)
- 第1電極層と、
前記第1電極層上に形成された第1基板と、
前記第1基板上に形成された第1反射層と、
前記第1反射層上に形成された活性領域と、
前記活性領域上に形成された第2反射層と、
前記第2反射層上に形成された第1半導体層と、
前記第1半導体層上に形成された第2電極層であって、前記活性領域に開口部を形成するための電流遮断層が前記活性領域と第2電極層との間に配置され、前記開口部に合わせて整列された貫通部を持つ第2電極層と、
前記第2電極層の貫通部と前記開口部との間の共振器内に位置するものであり、前記共振器内の伝導を容易にするため、前記貫通部と前記開口部の断面寸法よりも十分に小さな断面寸法を有する電流注入領域と、
を備えることを特徴とする面発光レーザー装置。 - 前記第1半導体層と第2電極層との間に配置された第2半導体層をさらに備え、前記第2反射層、第1半導体層及び第2半導体層はp−n−p構造を形成し、前記電流注入領域は共振器内の亜鉛(Zn)拡散及び亜鉛注入のうち、少なくとも一つの方法により形成されることを特徴とする請求項1に記載の面発光レーザー装置。
- 前記第1基板はn−GaAs基板であり、第1反射層はn−DBR、第2反射層はp−DBRであり、第1及び第2半導体層はそれぞれn−GaAs及びp−GaAsであることを特徴とする請求項2に記載の面発光レーザー装置。
- 前記第1半導体層と第2電極層との間に配置された第2半導体層をさらに備え、前記第2反射層、第1半導体層及び第2半導体層はn−p−n構造を形成し、前記電流注入領域は、共振器内のシリコン(Si)拡散及びシリコン注入のうち少なくとも一つの方法により形成されることを特徴とする請求項1に記載の面発光レーザー装置。
- 前記第1基板はp−GaAs基板であり、第1反射層はp−DBR、第2反射層はn−DBRであり、第1及び第2半導体層はそれぞれp−GaAs及びn−GaAsであることを特徴とする請求項4に記載の面発光レーザー装置。
- 前記活性領域は複数の量子ウェルで形成されることを特徴とする請求項1に記載の面発光レーザー装置。
- 第1電極層と、
前記第1電極層上に形成された第1基板と、
前記第1基板上に形成された第1反射層と、
前記第1反射層上に形成された活性領域と、
前記活性領域上に形成された第2反射層と、
前記第2反射層上に形成された第1及び第2半導体層と、
前記第2半導体層上に形成された第2電極層であって、前記活性領域に開口部を形成するための電流遮断層が前記活性領域と前記第2反射層との間に配置され、前記開口部に合わせて整列された貫通部を持つ第2電極層と、
前記第2電極層の貫通部と前記開口部との間の共振器内に位置するものであり、前記第2反射層、第1半導体層及び第2半導体層を通過する伝導を容易にするため、前記貫通部と前記開口部の断面寸法よりも十分に小さな断面寸法を有する電流注入領域と、
を備えることを特徴とする面発光レーザー装置。 - 前記電流注入領域は、亜鉛拡散及び亜鉛注入のうち少なくとも一つの方法により形成されることを特徴とする請求項7に記載の面発光レーザー装置。
- 前記電流注入領域は、シリコン拡散及びシリコン注入のうち少なくとも一つの方法により形成されることを特徴とする請求項7に記載の面発光レーザー装置。
- 前記第1基板及び第1反射層は同一にドーピングされ、前記第2反射層は逆にドーピングされ、前記第1半導体層は第2半導体層と逆にドーピングされることを特徴とする請求項7に記載の面発光レーザー装置。
- 前記第1基板はn−GaAs基板であり、第1反射層はn−DBR、第2反射層はp−DBRであり、第1及び第2半導体層はそれぞれn−GaAs及びp−GaAsであることを特徴とする請求項10に記載の面発光レーザー装置。
- 前記第1基板はp−GaAs基板であり、第1反射層はp−DBR、第2反射層はn−DBRであり、第1及び第2半導体層はそれぞれp−GaAs及びn−GaAsであることを特徴とする請求項10に記載の面発光レーザー装置。
- 前記活性領域は、複数の量子ウェルで形成されることを特徴とする請求項7に記載の面発光レーザー装置。
- 前記活性領域と第2反射層との間に配置されたトンネル接合層をさらに備えることを特徴とする請求項7に記載の面発光レーザー装置。
- 前記第1基板と第1及び第2反射層とは同一にドーピングされ、前記第1半導体層は第2半導体層と逆にドーピングされることを特徴とする請求項14に記載の面発光レーザー装置。
- 前記第1基板はn−GaAs基板であり、第1及び第2反射層はn−DBRであり、第1及び第2半導体層はそれぞれp−GaAs及びn−GaAsであることを特徴とする請求項15に記載の面発光レーザー装置。
- 出力カプラと、前記第2電極層と出力カプラとの間に配置された非線形光学素子とをさらに備え、前記非線形光学素子及び出力カプラは、前記開口部と前記第2電極層の貫通部との間に形成された共振器に実質的に一致するように整列されたことを特徴とする請求項1に記載の面発光レーザー装置。
- 前記非線形光学素子は、2次調和波発生(SHG)結晶であることを特徴とする請求項17に記載の面発光レーザー装置。
- 前記非線形光学素子は、前記面発光レーザーの出力周波数を2倍にすることを特徴とする請求項17に記載の面発光レーザー装置。
- 前記非線形光学素子及び出力カプラは、前記第2電極層の外部に配置されて垂直外部共振器形面発光レーザー(VECSEL)を形成することを特徴とする請求項17に記載の面発光レーザー装置。
- 前記出力カプラはミラーであることを特徴とする請求項17に記載の面発光レーザー装置。
- 前記電流遮断層は前記活性領域上に配置されたことを特徴とする請求項1に記載の面発光レーザー装置。
- 前記電流遮断層は前記第2反射層上に配置されたことを特徴とする請求項1に記載の面発光レーザー装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040082075A KR100982421B1 (ko) | 2004-10-14 | 2004-10-14 | 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자 |
KR10-2004-0082075 | 2004-10-14 | ||
US11/224,144 | 2005-09-13 | ||
US11/224,144 US20060104326A1 (en) | 2004-10-14 | 2005-09-13 | Funnel structure vecsel |
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JP2006114915A JP2006114915A (ja) | 2006-04-27 |
JP4855038B2 true JP4855038B2 (ja) | 2012-01-18 |
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JP2005300330A Expired - Fee Related JP4855038B2 (ja) | 2004-10-14 | 2005-10-14 | ファンネル構造のvecsel |
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JP (1) | JP4855038B2 (ja) |
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JP5000277B2 (ja) * | 2006-11-27 | 2012-08-15 | 浜松ホトニクス株式会社 | テラヘルツ電磁波発生装置およびテラヘルツ電磁波検出装置 |
JP2009010248A (ja) * | 2007-06-29 | 2009-01-15 | Canon Inc | 面発光レーザおよびその製造方法 |
JP4502223B2 (ja) | 2007-12-05 | 2010-07-14 | 株式会社エスグランツ | ビット列のマージソート装置、方法及びプログラム |
JP5355276B2 (ja) * | 2009-07-28 | 2013-11-27 | キヤノン株式会社 | 面発光レーザ |
US9112331B2 (en) | 2012-03-22 | 2015-08-18 | Palo Alto Research Center Incorporated | Surface emitting laser incorporating third reflector |
US9124062B2 (en) | 2012-03-22 | 2015-09-01 | Palo Alto Research Center Incorporated | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector |
US9112332B2 (en) | 2012-06-14 | 2015-08-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
US11652333B2 (en) | 2017-11-30 | 2023-05-16 | Sony Semiconductor Solutions Corporation | Surface-emitting semiconductor laser |
KR20230104519A (ko) | 2022-01-01 | 2023-07-10 | 캐논 가부시끼가이샤 | 반도체 발광 소자, 발광장치, 및 측거장치 |
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US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
JPH10178235A (ja) * | 1996-12-17 | 1998-06-30 | Nec Corp | 半導体面発光レーザ及びその製造方法 |
US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
JP2000277852A (ja) * | 1999-03-24 | 2000-10-06 | Fuji Xerox Co Ltd | 表面発光型半導体レーザ、及びその製造方法 |
CA2415142C (en) * | 2000-07-10 | 2012-03-20 | Corporation For Laser Optics Research | Systems and methods for speckle reduction through bandwidth enhancement |
US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
DE10105722B4 (de) * | 2001-02-08 | 2006-12-14 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser mit Vertikalresonator und modenselektiven Gebieten |
JP2003069151A (ja) * | 2001-06-12 | 2003-03-07 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ素子 |
JP4184769B2 (ja) * | 2002-11-26 | 2008-11-19 | 株式会社東芝 | 面発光型半導体レーザ及びその製造方法 |
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2005
- 2005-10-14 JP JP2005300330A patent/JP4855038B2/ja not_active Expired - Fee Related
- 2005-10-14 EP EP20050256393 patent/EP1648060B1/en not_active Expired - Fee Related
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EP1648060A1 (en) | 2006-04-19 |
EP1648060B1 (en) | 2008-07-23 |
JP2006114915A (ja) | 2006-04-27 |
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