JP2013214747A - 直接液体注入用の第二族イミダゾレート配合物 - Google Patents
直接液体注入用の第二族イミダゾレート配合物 Download PDFInfo
- Publication number
- JP2013214747A JP2013214747A JP2013075821A JP2013075821A JP2013214747A JP 2013214747 A JP2013214747 A JP 2013214747A JP 2013075821 A JP2013075821 A JP 2013075821A JP 2013075821 A JP2013075821 A JP 2013075821A JP 2013214747 A JP2013214747 A JP 2013214747A
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- JP
- Japan
- Prior art keywords
- dimethylpropyl
- imidazolate
- imidazole
- dimethylbutyl
- tert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 117
- JBFYUZGYRGXSFL-UHFFFAOYSA-N imidazolide Chemical compound C1=C[N-]C=N1 JBFYUZGYRGXSFL-UHFFFAOYSA-N 0.000 title claims description 72
- 239000007788 liquid Substances 0.000 title abstract description 15
- 238000002347 injection Methods 0.000 title abstract description 6
- 239000007924 injection Substances 0.000 title abstract description 6
- 238000009472 formulation Methods 0.000 title description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N 1H-imidazole Chemical class C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 231
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 89
- 239000010408 film Substances 0.000 claims abstract description 59
- 239000003446 ligand Substances 0.000 claims abstract description 57
- 239000002904 solvent Substances 0.000 claims abstract description 44
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 28
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 28
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 6
- -1 strontium bis (2,4,5-tri-tert-butylimidazolate) Chemical compound 0.000 claims description 295
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 125
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 61
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 50
- 229910052712 strontium Inorganic materials 0.000 claims description 48
- 238000000231 atomic layer deposition Methods 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 45
- 229910052788 barium Inorganic materials 0.000 claims description 41
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 32
- 239000011575 calcium Substances 0.000 claims description 31
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 28
- 229910052791 calcium Inorganic materials 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 239000010936 titanium Substances 0.000 claims description 27
- 229910052719 titanium Inorganic materials 0.000 claims description 27
- ARGCQEVBJHPOGB-UHFFFAOYSA-N 2,5-dihydrofuran Chemical compound C1OCC=C1 ARGCQEVBJHPOGB-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 238000010926 purge Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 239000011777 magnesium Substances 0.000 claims description 15
- JKTCBAGSMQIFNL-UHFFFAOYSA-N 2,3-dihydrofuran Chemical compound C1CC=CO1 JKTCBAGSMQIFNL-UHFFFAOYSA-N 0.000 claims description 14
- LJPCNSSTRWGCMZ-UHFFFAOYSA-N 3-methyloxolane Chemical compound CC1CCOC1 LJPCNSSTRWGCMZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 13
- HGPTZTZFVFZFBS-UHFFFAOYSA-N 2-tert-butyl-4,5-bis(2-methylbutan-2-yl)-1h-imidazole Chemical compound CCC(C)(C)C=1N=C(C(C)(C)C)NC=1C(C)(C)CC HGPTZTZFVFZFBS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052705 radium Inorganic materials 0.000 claims description 12
- AKRAPVPNWWFNCV-UHFFFAOYSA-N 2,4,5-tritert-butyl-1h-imidazole Chemical compound CC(C)(C)C1=NC(C(C)(C)C)=C(C(C)(C)C)N1 AKRAPVPNWWFNCV-UHFFFAOYSA-N 0.000 claims description 11
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 11
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 11
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- YZTBHFHNTHQUSS-UHFFFAOYSA-N 2,4,5-tris(2-methylbutan-2-yl)-1h-imidazole Chemical compound CCC(C)(C)C1=NC(C(C)(C)CC)=C(C(C)(C)CC)N1 YZTBHFHNTHQUSS-UHFFFAOYSA-N 0.000 claims description 9
- ZPQNHSYMBUGOCZ-UHFFFAOYSA-N 4,5-bis(2-methylbutan-2-yl)-2-(2-methylpentan-2-yl)-1h-imidazole Chemical compound CCCC(C)(C)C1=NC(C(C)(C)CC)=C(C(C)(C)CC)N1 ZPQNHSYMBUGOCZ-UHFFFAOYSA-N 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 9
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims description 9
- 239000004914 cyclooctane Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- UCZQIJRIXVQDIW-UHFFFAOYSA-N 2,4,5-tris(2-methylpentan-2-yl)-1h-imidazole Chemical compound CCCC(C)(C)C1=NC(C(C)(C)CCC)=C(C(C)(C)CCC)N1 UCZQIJRIXVQDIW-UHFFFAOYSA-N 0.000 claims description 8
- UEKAJTHUXCNUIA-UHFFFAOYSA-N 4,5-ditert-butyl-2-(2-methylpentan-2-yl)-1h-imidazole Chemical compound CCCC(C)(C)C1=NC(C(C)(C)C)=C(C(C)(C)C)N1 UEKAJTHUXCNUIA-UHFFFAOYSA-N 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- MVYWDWUMSQPBKQ-UHFFFAOYSA-N 2-tert-butyl-4,5-bis(2-methylpentan-2-yl)-1h-imidazole Chemical compound CCCC(C)(C)C=1N=C(C(C)(C)C)NC=1C(C)(C)CCC MVYWDWUMSQPBKQ-UHFFFAOYSA-N 0.000 claims description 7
- QQSPNWIHOAZQNI-UHFFFAOYSA-N 2-(2-methylbutan-2-yl)-4,5-bis(2-methylpentan-2-yl)-1h-imidazole Chemical compound CCCC(C)(C)C=1N=C(C(C)(C)CC)NC=1C(C)(C)CCC QQSPNWIHOAZQNI-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 6
- PTVUOVTZAJQQAT-UHFFFAOYSA-N 4,5-ditert-butyl-2-(2-methylbutan-2-yl)-1h-imidazole Chemical compound CCC(C)(C)C1=NC(C(C)(C)C)=C(C(C)(C)C)N1 PTVUOVTZAJQQAT-UHFFFAOYSA-N 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 5
- QYRZZMSNXUJBRN-UHFFFAOYSA-N CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Sr+2] Chemical compound CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Sr+2] QYRZZMSNXUJBRN-UHFFFAOYSA-N 0.000 claims description 4
- AOCZATLHNFKNOA-UHFFFAOYSA-N CC1COCC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] Chemical compound CC1COCC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] AOCZATLHNFKNOA-UHFFFAOYSA-N 0.000 claims description 4
- QZCZZTMFLOHICY-UHFFFAOYSA-N barium(2+) 2,4,5-tris(2-methylpentan-2-yl)imidazol-3-ide Chemical compound CCCC(C)(C)C1=C(N=C([N-]1)C(C)(C)CCC)C(C)(C)CCC.CCCC(C)(C)C1=C(N=C([N-]1)C(C)(C)CCC)C(C)(C)CCC.[Ba+2] QZCZZTMFLOHICY-UHFFFAOYSA-N 0.000 claims description 4
- FWNVDBZXKJRAOR-UHFFFAOYSA-N strontium 2,4,5-tris(2-methylpentan-2-yl)imidazol-3-ide Chemical compound CCCC(C)(C)C1=C(N=C([N-]1)C(C)(C)CCC)C(C)(C)CCC.CCCC(C)(C)C1=C(N=C([N-]1)C(C)(C)CCC)C(C)(C)CCC.[Sr+2] FWNVDBZXKJRAOR-UHFFFAOYSA-N 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- WHBCMZZALZPWSY-UHFFFAOYSA-N strontium;2-tert-butyl-4,5-bis(2-methylbutan-2-yl)imidazol-3-ide Chemical compound CCC(C)(C)C1=C(C(C)(C)CC)N=C(C(C)(C)C)N1[Sr]N1C(C(C)(C)CC)=C(C(C)(C)CC)N=C1C(C)(C)C WHBCMZZALZPWSY-UHFFFAOYSA-N 0.000 claims description 3
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 claims description 2
- LHOWCGNYXQIJLZ-UHFFFAOYSA-N C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ca+2] Chemical compound C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ca+2] LHOWCGNYXQIJLZ-UHFFFAOYSA-N 0.000 claims description 2
- RZOWRPLCIGFFFZ-UHFFFAOYSA-N C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] Chemical compound C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] RZOWRPLCIGFFFZ-UHFFFAOYSA-N 0.000 claims description 2
- XUOYITBKHYQKBY-UHFFFAOYSA-N C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] Chemical compound C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] XUOYITBKHYQKBY-UHFFFAOYSA-N 0.000 claims description 2
- WSFMZRNIZADXTQ-UHFFFAOYSA-N C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Sr+2] Chemical compound C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Sr+2] WSFMZRNIZADXTQ-UHFFFAOYSA-N 0.000 claims description 2
- DSIBELSIMRZCFW-UHFFFAOYSA-N CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ba+2] Chemical compound CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ba+2] DSIBELSIMRZCFW-UHFFFAOYSA-N 0.000 claims description 2
- XVHDOAUDTNQEAR-UHFFFAOYSA-N CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ca+2] Chemical compound CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ca+2] XVHDOAUDTNQEAR-UHFFFAOYSA-N 0.000 claims description 2
- KYKBSJFMKOKRTL-UHFFFAOYSA-N CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] Chemical compound CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] KYKBSJFMKOKRTL-UHFFFAOYSA-N 0.000 claims description 2
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- RLPKMBCMIDLCOB-UHFFFAOYSA-N CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] Chemical compound CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] RLPKMBCMIDLCOB-UHFFFAOYSA-N 0.000 claims description 2
- YQOAYSVDPCEBTQ-UHFFFAOYSA-N CC1COCC1.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ba+2] Chemical compound CC1COCC1.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(C)(C)C)C(C)(C)C.[Ba+2] YQOAYSVDPCEBTQ-UHFFFAOYSA-N 0.000 claims description 2
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- OQKFXADKTRUFMD-UHFFFAOYSA-N O1CC=CC1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] Chemical compound O1CC=CC1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] OQKFXADKTRUFMD-UHFFFAOYSA-N 0.000 claims description 2
- QGNHTDJTRAQZEU-UHFFFAOYSA-N O1CC=CC1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] Chemical compound O1CC=CC1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ca+2] QGNHTDJTRAQZEU-UHFFFAOYSA-N 0.000 claims description 2
- ZBKUWZXIIJKRHW-UHFFFAOYSA-N O1CC=CC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ba+2] Chemical compound O1CC=CC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ba+2] ZBKUWZXIIJKRHW-UHFFFAOYSA-N 0.000 claims description 2
- AJUQTDPILFZNGD-UHFFFAOYSA-N O1CCC=C1.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] Chemical compound O1CCC=C1.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] AJUQTDPILFZNGD-UHFFFAOYSA-N 0.000 claims description 2
- VXAPCARFVJMVKA-UHFFFAOYSA-N O1CCC=C1.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] Chemical compound O1CCC=C1.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.C(C)(C)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] VXAPCARFVJMVKA-UHFFFAOYSA-N 0.000 claims description 2
- IXZXGLNAZOHDDI-UHFFFAOYSA-N O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] Chemical compound O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] IXZXGLNAZOHDDI-UHFFFAOYSA-N 0.000 claims description 2
- FNQXZMLXQKYMRC-UHFFFAOYSA-N O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] Chemical compound O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] FNQXZMLXQKYMRC-UHFFFAOYSA-N 0.000 claims description 2
- HWQIMFBBAZZSEJ-UHFFFAOYSA-N O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] Chemical compound O1CCC=C1.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Ba+2] HWQIMFBBAZZSEJ-UHFFFAOYSA-N 0.000 claims description 2
- IQWXOCQXTZYPRV-UHFFFAOYSA-N O1CCC=C1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] Chemical compound O1CCC=C1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Sr+2] IQWXOCQXTZYPRV-UHFFFAOYSA-N 0.000 claims description 2
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- LOOKAYMSLIHXGK-UHFFFAOYSA-N O1CC=CC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Sr+2] Chemical compound O1CC=CC1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CCC)(C)C)C(CCC)(C)C.[Sr+2] LOOKAYMSLIHXGK-UHFFFAOYSA-N 0.000 claims 1
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- FCQOZBXTGJQDFG-UHFFFAOYSA-N O1CCC=C1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] Chemical compound O1CCC=C1.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.CC(CCC)(C)C=1[N-]C(=C(N1)C(CC)(C)C)C(CC)(C)C.[Ca+2] FCQOZBXTGJQDFG-UHFFFAOYSA-N 0.000 claims 1
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- 239000002243 precursor Substances 0.000 abstract description 116
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- 230000007935 neutral effect Effects 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 38
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- GGBJHURWWWLEQH-UHFFFAOYSA-N butylcyclohexane Chemical compound CCCCC1CCCCC1 GGBJHURWWWLEQH-UHFFFAOYSA-N 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 description 1
- CETVQRFGPOGIQJ-UHFFFAOYSA-N lithium;hexane Chemical compound [Li+].CCCCC[CH2-] CETVQRFGPOGIQJ-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- SBOJXQVPLKSXOG-UHFFFAOYSA-N o-amino-hydroxylamine Chemical class NON SBOJXQVPLKSXOG-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000000168 pyrrolyl group Polymers 0.000 description 1
- 229910001426 radium ion Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000005353 silylalkyl group Chemical group 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- WRIKHQLVHPKCJU-UHFFFAOYSA-N sodium bis(trimethylsilyl)amide Chemical compound C[Si](C)(C)N([Na])[Si](C)(C)C WRIKHQLVHPKCJU-UHFFFAOYSA-N 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001427 strontium ion Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】炭化水素系溶媒への高い溶解性を有する第二族金属錯体を与える、適切な中性のドナー配位子分子が配位している第二族イミダゾレート化合物を含む組成物。
【選択図】図1
Description
a.次を含む第二族金属イミダゾレート錯体、及び炭化水素系溶媒を含有する第二族金属含有組成物を導入する工程:
2,4,5−トリ−tert−ブチルイミダゾレート、2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート、2−(1,1−ジメチルブチル)−4,5−ジ−tert−ブチルイミダゾレート、2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート、2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート、2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート、2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート、2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート、及び2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレートからなる群より選択される少なくとも1つを含む、イミダゾレート;バリウム、ストロンチウム、マグネシウム、ラジウム及びカルシウムから選択される、第二族金属;及び上記錯体の上記イミダゾレートに第二族金属を配位させる配位子であって、単座のC4〜C12の窒素含有環状分子、単座のC4〜C12の酸素含有環状分子、C4〜C12の窒素含有二座配位子、C4〜C12の酸素含有二座配位子、及びC4〜C12の窒素及び酸素を含有する二座配位子からなる群より選択される少なくとも1つである、配位子、
b.上記基材に上記第二族金属含有組成物を化学吸着させる工程、
c.パージガスを用いて、未反応の上記第二族金属含有組成物をパージする工程、
d.加熱した上記基材上の上記第二族金属含有組成物に、酸素源を与えて、上記吸着した第二族金属含有組成と反応させる工程、及び
e.随意に、未反応の酸素源をパージする工程。
2,4,5−トリ−tert−ブチルイミダゾール;2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾール;2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾール;2−tert−ブチル−4,5−ジ−(1,1−ジメチルペンチル)イミダゾール;2−tert−ブチル−4,5−ジ−(1,1−ジメチルヘキシル)イミダゾール;2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾール;2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾール;
2,4,5−トリ−tert−ブチルイミダゾール;2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾール;2−(1,1−ジメチルブチル)−4,5−ジ−tert−ブチルイミダゾール;2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾール;2−tertブチル−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルプロピル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルブチル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルペンチル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルヘキシル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルヘキシル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1−メチルエチル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;
2−tertブチル− 4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルプロピル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルブチル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルペンチル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルヘキシル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;2−(1,1−ジメチルヘキシル)−4,5−ジ(1−メチル−1−エチルプロピル)イミダゾール;
基材を反応器に与える工程;
上記反応器に、第二族金属含有前駆体を含む含有組成物を導入する工程;
上記第二族金属含有前駆体を、基材に化学吸着させる工程;
未吸着の上記第二族金属含有前駆体を、パージガスを用いてパージする工程;
酸素源を、加熱した上記基材上の上記第二族金属含有前駆体に与えて、上記吸着した少なくとも1種の第二族金属含有前駆体と反応させる工程;及び
随意に、あらゆる未反応の酸素源をパージする工程。
周囲温度から約700℃までの範囲の温度に加熱し、且つ1Torr以下の圧力で維持した反応器に、1以上の基材を置くステップ;
第二族金属含有前駆体を含む組成物を導入するステップ:
酸素源を、上記反応器に与えて、上記第二族金属含有前駆体と少なくとも部分的に反応させ、そして上記1以上の基材に第二族金属膜を堆積させるステップ。
このCVD法のある種の実施態様では、上記反応器を、上記導入ステップの間に100mTorr〜600mTorrの範囲の圧力で維持する。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50ミリリットル(ml)の脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.36g(0.005モル)のテトラヒドロフランを、5分にわたって添加して、このストロンチウム錯体をゆっくりと溶解させた。この生成溶液を終夜攪拌し、そして減圧してヘキサンを除去した。生成物は2.8gであった。最終生成物の構造が、X線結晶解析によって図1のように決定し、式2のタイプとなることが分かった。
1H NMR:(500MHz、D8トルエン):δ =1.34(m、4H)、δ=1.41(s、18H)、δ=1.57(s、36H)、δ=3.96(m、4H)。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.50ml(0.005モル)の3−メチルTHFを添加して、この混合物を終夜で攪拌した。そして、減圧してヘキサンを除去して、白い固体を得た。最終生成物の構造が、X線結晶解析によって図2のように決定し、式2のタイプとなることが分かった。収率:2.74g、85%。
1H NMR:(500MHz、D8トルエン):δ =0.72(d、3H)、δ=1.43(s、18H)、δ=1.53(m、1H)、δ=1.58(s、36H)、δ=1.87(m、2H)、δ=3.25(t、1H)、δ=4.0035(m、2H)、δ=4.3456(t、1H)。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.35g(0.005モル)の2,5−ジヒドロフランを添加して、この混合物を終夜で攪拌した。そして、減圧してヘキサンを除去して、白い固体を得た。最終生成物の構造が、X線結晶解析によって図3のように決定し、式2のタイプとなることが分かった。
1H NMR:(500MHz、D8トルエン):δ =1.43(s、18H)、δ=1.56(s、36H)、δ=4.47(s、4H)、δ=5.24(s、2H)。
収率:2.51g、80%。
TGA:8.09%の残渣質量
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.52g(0.005モル)のジメトキシプロパンを5分にわたって添加して、このストロンチウム錯体をゆっくりと溶解させた。さらに20分の攪拌後、この混合物は濁り、そしてさらに10分以内に白い沈殿物が形成した。この混合物を終夜で攪拌した。減圧してヘキサンを除去して、白い固体を得た。生成物は2.83gであった。
1H NMR:(500MHz、D8トルエン):δ=0.47(d、3H)、δ=1.47(s、18H)、δ=1.62(s、36H)、δ=2.25(m、1H)、δ=2.4(m、1H)、δ=2.64(m、1H)、δ=2.86(s、3H)、δ=3.02(s、3H)。
最終生成物の構造が、X線結晶解析によって図4のように決定し、式3のタイプとなることが分かった。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、30mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.53ml(0.005モル)の1,1−ジメトキシエタンを添加して、この混合物を終夜で攪拌した。そして、減圧してヘキサンを除去して、白い固体を得た。収率:3.05g、94%。
1H NMR:(500MHz、D8トルエン):δ=0.61(d、3H)、δ=1.48(s、18H)、δ=1.58(s、36H)、δ=2.73(s、6H)、δ=3.58(q、1H)。
最終生成物の構造が、X線結晶解析によって図5のように決定し、式3のタイプとなることが分かった。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.58g(0.005モル)のテトラメチルエチレンジアンミンを5分にわたって添加して、このストロンチウム錯体をゆっくりと溶解させた。さらに20分の攪拌後、この混合物は濁り、そしてさらに10分以内に白い沈殿物が形成した。この混合物を終夜で攪拌した。減圧してヘキサンを除去して、白い固体を得た。生成物:2.8g。
1H NMR:(500MHz、D8トルエン):δ=1.50(s、18H)、δ=1.59(s、36H)、δ=1.68(t、4H)、δ=1.79(s、12H)。
最終生成物の構造が、X線結晶解析によって図6のように決定し、式4のタイプとなることが分かった。
2.79g(0.0025モル)のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)を、50mlの脱水ヘキサン中で、窒素雰囲気下で攪拌した。次いで、0.65g(0.005モル)のジ−n−ブチルエーテルを添加して、この混合物を終夜で攪拌した。そして、減圧を適用してヘキサンを除去して、白い固体を得た。この白い固体のNMRは、のジ−ストロンチウムテトラ(2,4,5−トリ−tert−ブチルイミダゾレート)であることを示し、これは減圧によってジ−n−ブチルエーテルも除去されたこと、及びこのストロンチウムイミダゾレートと錯体を形成しないことを示唆した。
0.29g(0.46mmol)のストロンチウムビス(2,4,5−トリ−tertブチルイミダゾレート)(2,5−ジヒドロフラン)を、0.91gのシクロオクタンに、室温で、ドライ窒素雰囲気下で溶解して、1.2gの重量の1.25mlの体積の最終的な溶液を得た。
0.33g(0.53mmol)のストロンチウムビス(2,4,5−トリ−tertブチルイミダゾレート)(2,5−ジヒドロフラン)を、0.53gのメシチレンに、室温で、ドライ窒素雰囲気下で溶解して、0.86gの重量の0.81mlの体積の最終的な溶液を得た。
メシチレン中のストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(テトラヒドロフラン)の0.3M溶液を、DLIシステム(モデル:2830HT、MSP Corp.、米国)に、0.5g/分で提供した。500sccmのアルゴンフローを用いて、200℃で設定した気化器を通じて、その生成蒸気流を、1Torrの圧力に設定したALD反応チャンバーに送った。30秒の液体フローコントローラー(LFC:liquid flow controller)による前駆体パルスに続く、90秒のアルゴンパージの繰り返しサイクルを実行した。200分間にわたって、サイクル当たりのLFCフローレートは、一定に0.5g/分に保持した。これにより、気化器の詰り及びその結果として起こる前駆体流の制限は発生しなかった。これは、前駆体溶液の清浄な気化を明らかに示している。メシチレン及びストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(テトラヒドロフラン)からなる蒸気を、4重極質量分析器(QMS)によって、同じく200分間にわたって、サンプリングした。組成物中に存在するメシチレンを表している、分子フラグメントが77及び79muのイオン流強度を、時間の関数としてプロットした。QMSの結果は、77及び79質量単位(mu:mass unit)のフラグメントの応答が、1×10e−10(液体フローがオフ)及び1×10e−7(液体フローがオン)の間で一貫してサイクルを行った場合に、効果的に重なることを示した。さらに、この質量分析器のイオン流サイクルと調和して、QMSの圧力が、3.5×10e−6Torr(液体フローがオフ)及び5.5×10e−6Torr(液体フローがオン)の間での一貫したサイクルとなることを観測した。これらの結果は、QMS圧力及びメシチレンの流がLFC前駆体パルスと共に一貫したサイクルになることを示している。また、これらの結果は気化器の詰り及びその結果としての前駆体流の制限が起こらないこと、及びこの前駆体溶液が清浄に気化することを、さらに示している。
Claims (23)
- 以下を含む第二族金属イミダゾレート錯体、及び炭化水素系溶媒を含む、組成物:
2,4,5−トリ−tert−ブチルイミダゾレート;2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート;2−(1,1−ジメチルブチル)−4,5−ジ−tert−ブチルイミダゾレート;2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート;2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート;2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート;2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート;2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート;及び2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレートからなる群より選択される少なくとも1つの、イミダゾレート;
バリウム、ストロンチウム、マグネシウム、ラジウム、及びカルシウムからなる群より選択される、第二族金属;及び
単座のC4〜C12の窒素含有環状分子、単座のC4〜C12の酸素含有環状分子、C4〜C12の窒素含有二座配位子、C4〜C12の酸素含有二座配位子、及びC4〜C12の窒素及び酸素を含有する二座配位子からなる群より選択される少なくとも1つの、前記第二族金属イミダゾレート錯体に配位する配位子。 - 前記第二族金属イミダゾレート錯体の濃度が、0.1〜1Mの範囲である、請求項1に記載の組成物。
- 前記第二族金属イミダゾレート錯体の濃度が、0.1〜0.5Mの範囲である、請求項2に記載の組成物。
- 2つの異なる第二族金属イミダゾレート錯体を含む、請求項1に記載の組成物。
- 100℃以上の沸点を有する炭化水素系溶媒を含む、請求項1に記載の組成物。
- 前記炭化水素系溶媒が、シクロオクタンを含む、請求項5に記載の組成物。
- 前記炭化水素系溶媒が、メシチレンを含む、請求項5に記載の組成物。
- 第二族含有薄膜のALD堆積又はCVD堆積用のDLI供給に用いられる、請求項5に記載の組成物。
- ALD又はCVDによるSTO薄膜及びBST薄膜の堆積のために、揮発性チタン源と共に用いられる、請求項8に記載の組成物。
- 前記配位子が、単座のC4〜C12の窒素含有環状分子及び単座のC4〜C12の酸素含有環状分子からなる群より選択される配位子である、請求項1に記載の組成物。
- 前記配位子が、テトラヒドロフラン、3−メチルテトラヒドロフラン、2,5−ジヒドロフラン、2,3−ジヒドロフラン、ピリジン、N−メチルイミダゾール、及びピロールからなる群より選択される配位子である、請求項10に記載の組成物。
- 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、バリウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、カルシウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2,4,5−トリ−tert−ブチルイミダゾレート)( 2,3−ジヒドロフラン)。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート(2,5−ジヒドロフラン)、カルシウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル))イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル))イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート(3−メチルテトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート))(テトラヒドロフラン)、ストロンチウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン),ストロンチウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2.4,5−トリ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン) 。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート)(2,3−ジヒドロフラン) 。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(テトラヒドロフラン)、カルシウムビス(2,4,5−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2,4,5−トリ−(1,1−ジメチルプロピル) イミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)− イミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2,4,5−トリ−(1,1−ジメチルプロピル)− イミダゾレート)(2,3−ジヒドロフラン) 。 - 前記第二族金属イミダゾレート錯体が、以下から選択される少なくとも1つである、請求項11に記載の組成物:
カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(テトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(3−メチルテトラヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、バリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,5−ジヒドロフラン)、カルシウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,3−ジヒドロフラン)、ストロンチウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,3−ジヒドロフラン)、及びバリウムビス(2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレート)(2,3−ジヒドロフラン)。 - 次の工程を含む、厚みを有する第二族金属酸化物膜を基材に形成する方法:
a.次を含む第二族金属イミダゾレート錯体、及び炭化水素系溶媒を含む第二族金属含有組成物を導入する工程:
2,4,5−トリ−tert−ブチルイミダゾレート;2−tert−ブチル−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート;2−(1,1−ジメチルブチル)−4,5−ジ−tert−ブチルイミダゾレート;2−(1,1−ジメチルブチル)−4,5−ジ−(1,1−ジメチルプロピル)イミダゾレート;2−tert−ブチル−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート;2,4,5−トリ−(1,1−ジメチルブチル)イミダゾレート;2,4,5−トリ−(1,1−ジメチルプロピル)イミダゾレート;2−(1,1−ジメチルプロピル)−4,5−ジ−(1,1−ジメチルブチル)イミダゾレート;及び2−(1,1−ジメチルプロピル)−4,5−ジ−tert−ブチルイミダゾレートからなる群より選択される少なくとも1つの、イミダゾレート;
バリウム、ストロンチウム、マグネシウム、ラジウム、及びカルシウムからなる群より選択される、第二族金属;及び
単座のC4〜C12の窒素含有環状分子、単座のC4〜C12の酸素含有環状分子、C4〜C12の窒素含有二座配位子、C4〜C12の酸素含有二座配位子、及びC4〜C12の窒素及び酸素の両方を含有する二座配位子からなる群より選択される少なくとも1つの、前記第二族金属イミダゾレート錯体に配位する配位子;
b.前記基材に、前記第二族金属含有組成物を化学吸着させる工程;
c.未反応の前記第二族金属含有組成物を、パージガスを用いてパージする工程;
d.加熱した前記基材上にある前記第二族金属含有組成物に酸素源を与えて、前記吸着した第二族金属含有組成物と反応させる工程;及び
e.随意に、あらゆる未反応の酸素源をパージする工程。 - 前記厚みのフィルムが得られるまで工程a〜工程d及び随意に工程eを繰り返す、請求項21に記載の方法。
- 前記方法が原子層堆積プロセスである、請求項21に記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102014220879A1 (de) | 2013-10-15 | 2015-07-23 | Honda Motor Co., Ltd. | Abgasreinigungsfilter |
JP2021064787A (ja) * | 2019-10-10 | 2021-04-22 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | 薄膜蒸着用組成物、薄膜蒸着用組成物を用いた薄膜の製造方法、薄膜蒸着用組成物から製造された薄膜、および薄膜を含む半導体素子 |
Families Citing this family (2)
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KR101933727B1 (ko) * | 2013-08-26 | 2018-12-31 | 연세대학교 산학협력단 | 원자층 증착법으로 산화물 박막의 일부를 할로겐 원소로 도핑할 수 있는 할로겐 도핑 소스, 상기 할로겐 도핑 소스의 제조 방법, 상기 할로겐 원소 소스를 이용하여 원자층 증착법으로 산화물 박막의 일부를 할로겐으로 도핑하는 방법, 및 상기 방법을 이용하여 형성된 할로겐 원소가 도핑된 산화물 박막 |
CN114621259A (zh) * | 2020-12-10 | 2022-06-14 | 中国科学院大连化学物理研究所 | 一种金属有机氢化物络合物材料及其制备方法与应用 |
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2013
- 2013-03-22 US US13/848,808 patent/US20130260025A1/en not_active Abandoned
- 2013-03-29 TW TW102111543A patent/TWI468395B/zh not_active IP Right Cessation
- 2013-04-01 CN CN2013101331030A patent/CN103361630A/zh active Pending
- 2013-04-01 KR KR1020130035416A patent/KR20130113374A/ko active Search and Examination
- 2013-04-01 JP JP2013075821A patent/JP2013214747A/ja not_active Ceased
- 2013-04-02 EP EP13161953.8A patent/EP2644284B1/en not_active Not-in-force
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2015
- 2015-09-24 KR KR1020150135455A patent/KR20150116430A/ko not_active Application Discontinuation
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JP2011001362A (ja) * | 2009-05-29 | 2011-01-06 | Air Products & Chemicals Inc | 揮発性第二族金属前駆体 |
JP2011121936A (ja) * | 2009-10-23 | 2011-06-23 | Air Products & Chemicals Inc | 金属含有フィルムのための第四族金属前駆体 |
JP2011155243A (ja) * | 2009-10-23 | 2011-08-11 | Air Products & Chemicals Inc | 第四族金属含有フィルムの堆積方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014220879A1 (de) | 2013-10-15 | 2015-07-23 | Honda Motor Co., Ltd. | Abgasreinigungsfilter |
JP2021064787A (ja) * | 2019-10-10 | 2021-04-22 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | 薄膜蒸着用組成物、薄膜蒸着用組成物を用いた薄膜の製造方法、薄膜蒸着用組成物から製造された薄膜、および薄膜を含む半導体素子 |
US11482593B2 (en) | 2019-10-10 | 2022-10-25 | Samsung Sdi Co., Ltd. | Composition for depositing thin film, manufacturing method for thin film using the composition, thin film manufactured from the composition, and semiconductor device including the thin film |
JP7168624B2 (ja) | 2019-10-10 | 2022-11-09 | 三星エスディアイ株式会社 | 薄膜蒸着用組成物、薄膜蒸着用組成物を用いた薄膜の製造方法、薄膜蒸着用組成物から製造された薄膜、および薄膜を含む半導体素子 |
Also Published As
Publication number | Publication date |
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EP2644284A1 (en) | 2013-10-02 |
KR20130113374A (ko) | 2013-10-15 |
CN103361630A (zh) | 2013-10-23 |
TW201341368A (zh) | 2013-10-16 |
US20130260025A1 (en) | 2013-10-03 |
EP2644284B1 (en) | 2015-06-03 |
TWI468395B (zh) | 2015-01-11 |
KR20150116430A (ko) | 2015-10-15 |
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