JP2013187492A - 液処理装置 - Google Patents
液処理装置 Download PDFInfo
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- JP2013187492A JP2013187492A JP2012053483A JP2012053483A JP2013187492A JP 2013187492 A JP2013187492 A JP 2013187492A JP 2012053483 A JP2012053483 A JP 2012053483A JP 2012053483 A JP2012053483 A JP 2012053483A JP 2013187492 A JP2013187492 A JP 2013187492A
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- 239000007788 liquid Substances 0.000 title claims abstract description 151
- 238000012545 processing Methods 0.000 title claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000011084 recovery Methods 0.000 claims 2
- 230000003028 elevating effect Effects 0.000 description 55
- 239000007789 gas Substances 0.000 description 26
- 230000007423 decrease Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000001035 drying Methods 0.000 description 11
- 230000002378 acidificating effect Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 6
- 238000010306 acid treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】本発明による液処理装置10は、基板Wを水平に離間して下方より保持する回転自在な基板保持部21と、基板保持部21を回転駆動する回転駆動部25と、を備えている。基板保持部21に保持された基板Wの上方に、基板Wに向かって空気を供給する空気供給部81が設けられている。空気供給路90は、空気供給部81から供給された空気を吸引する吸引口91を有し、吸引口91から吸引された空気を、基板保持部21に保持された基板Wの下面と基板保持部21との間に形成された基板下方空間96に供給する。
【選択図】図2
Description
21 基板保持部
25 回転駆動部
26 回転軸
35 上面側処理液ノズル
41 下面側処理液供給管
46 ドレインカップ
50 昇降筒部材
81 ファン
82 フィルタ部材
83 整流部材
90 空気供給路
91 吸引口
92 供給口
95 空気供給空間
96 ウエハ下方空間
97 旋回流発生機構
200 コントローラ
W ウエハ
Claims (8)
- 基板を水平に離間して下方より保持する回転自在な基板保持部と、
前記基板保持部を回転駆動する回転駆動部と、
前記基板保持部に保持された前記基板に処理液を供給するノズルと、
前記基板保持部に保持された前記基板の上方に設けられ、当該基板に向かって空気を供給する空気供給部と、
前記空気供給部から供給された空気を吸引する吸引口を有する空気供給路であって、前記吸引口から吸引された空気を、当該基板保持部に保持された当該基板の下面と当該基板保持部との間に形成された基板下方空間に供給する前記空気供給路と、を備えたことを特徴とする液処理装置。 - 前記基板保持部の側方に設けられ、前記基板から側方に飛散した処理液を回収する回収カップを更に備え、
前記空気供給路の前記吸引口は、平面視で、前記回収カップの外側に配置されていることを特徴とする請求項1に記載の液処理装置。 - 前記空気供給部から供給された空気を清浄化するフィルタ部材と、
前記フィルタ部材に離間して設けられ、当該フィルタ部材により清浄化された空気を整流して、前記基板保持部に保持された前記基板へのダウンフローを形成する整流部材と、を更に備え、
前記空気供給路の前記吸引口は、前記フィルタ部材と前記整流部材との間に形成された空間に配置されていることを特徴とする請求項1または2に記載の液処理装置。 - 前記空気供給路は、前記吸引口から吸引された空気を前記基板下方空間に供給する供給口を更に有し、
前記空気供給路の前記吸引口の流路断面積は、前記供給口の流路断面積と同一または当該供給口の流路断面積より大きいことを特徴とする請求項1乃至3のいずれかに記載の液処理装置。 - 前記回転駆動部は、円筒状の回転軸を有し、
前記空気供給路は、前記回転軸の内側を通る貫通供給管を有していることを特徴とする請求項1乃至4のいずれかに記載の液処理装置。 - 前記貫通供給管の内側に、前記基板保持部に保持された前記基板の下面に処理液を供給する下面側処理液供給管が設けられていることを特徴とする請求項5に記載の液処理装置。
- 前記空気供給路の前記貫通供給管は、前記回転駆動部の前記回転軸に連結され、
前記貫通供給管の内面に、当該貫通供給管を通る空気に旋回流を発生させて、前記基板下方空間に供給される空気の流量を増大させる旋回流発生機構が設けられていることを特徴とする請求項5または6に記載の液処理装置。 - 前記空気供給部を制御する制御部を更に備え、
前記制御部は、前記基板保持部に保持された前記基板の回転数が上昇するにつれて、前記空気供給部から供給される空気の流量を増大するように、前記空気供給部を制御することを特徴とする請求項1乃至6のいずれかに記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053483A JP5596071B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
US13/783,552 US9452452B2 (en) | 2012-03-09 | 2013-03-04 | Liquid processing apparatus |
KR1020130023210A KR101750133B1 (ko) | 2012-03-09 | 2013-03-05 | 액 처리 장치 |
TW102107711A TWI522184B (zh) | 2012-03-09 | 2013-03-05 | 液體處理裝置 |
CN201310075206.6A CN103311155B (zh) | 2012-03-09 | 2013-03-08 | 液处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053483A JP5596071B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013187492A true JP2013187492A (ja) | 2013-09-19 |
JP5596071B2 JP5596071B2 (ja) | 2014-09-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012053483A Active JP5596071B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9452452B2 (ja) |
JP (1) | JP5596071B2 (ja) |
KR (1) | KR101750133B1 (ja) |
CN (1) | CN103311155B (ja) |
TW (1) | TWI522184B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019160957A (ja) * | 2018-03-12 | 2019-09-19 | 東京エレクトロン株式会社 | 基板乾燥装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6722532B2 (ja) * | 2016-07-19 | 2020-07-15 | 株式会社Screenホールディングス | 基板処理装置および処理カップ洗浄方法 |
JP6824773B2 (ja) * | 2017-02-20 | 2021-02-03 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR102121240B1 (ko) * | 2018-05-03 | 2020-06-18 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
CN108841474B (zh) * | 2018-07-28 | 2022-02-01 | 陕西秦酒酒业有限公司 | 高粱酒制备用原料加工装置 |
CN109107970A (zh) * | 2018-11-07 | 2019-01-01 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 晶圆清洁设备及晶圆生产线 |
KR102271566B1 (ko) * | 2019-10-28 | 2021-07-01 | 세메스 주식회사 | 기판 처리 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09139341A (ja) * | 1995-11-14 | 1997-05-27 | Dainippon Screen Mfg Co Ltd | 基板の回転処理方法およびその装置 |
JP2003174006A (ja) * | 2001-12-04 | 2003-06-20 | Ebara Corp | 基板処理装置 |
JP2011029593A (ja) * | 2009-06-23 | 2011-02-10 | Tokyo Electron Ltd | 液処理装置 |
JP2011222685A (ja) * | 2010-04-08 | 2011-11-04 | Tokyo Electron Ltd | 基板処理装置およびこれを備える塗布現像システム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2835479B2 (ja) | 1993-01-29 | 1998-12-14 | 東京エレクトロン株式会社 | 処理装置 |
US5375291A (en) * | 1992-05-18 | 1994-12-27 | Tokyo Electron Limited | Device having brush for scrubbing substrate |
EP1848024B1 (en) * | 2006-04-18 | 2009-10-07 | Tokyo Electron Limited | Liquid processing apparatus |
JP5301505B2 (ja) * | 2009-08-27 | 2013-09-25 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5223886B2 (ja) * | 2010-06-18 | 2013-06-26 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
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2012
- 2012-03-09 JP JP2012053483A patent/JP5596071B2/ja active Active
-
2013
- 2013-03-04 US US13/783,552 patent/US9452452B2/en active Active
- 2013-03-05 KR KR1020130023210A patent/KR101750133B1/ko active IP Right Grant
- 2013-03-05 TW TW102107711A patent/TWI522184B/zh active
- 2013-03-08 CN CN201310075206.6A patent/CN103311155B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09139341A (ja) * | 1995-11-14 | 1997-05-27 | Dainippon Screen Mfg Co Ltd | 基板の回転処理方法およびその装置 |
JP2003174006A (ja) * | 2001-12-04 | 2003-06-20 | Ebara Corp | 基板処理装置 |
JP2011029593A (ja) * | 2009-06-23 | 2011-02-10 | Tokyo Electron Ltd | 液処理装置 |
JP2011222685A (ja) * | 2010-04-08 | 2011-11-04 | Tokyo Electron Ltd | 基板処理装置およびこれを備える塗布現像システム |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019160957A (ja) * | 2018-03-12 | 2019-09-19 | 東京エレクトロン株式会社 | 基板乾燥装置 |
Also Published As
Publication number | Publication date |
---|---|
US20130233360A1 (en) | 2013-09-12 |
TW201400200A (zh) | 2014-01-01 |
KR20130103376A (ko) | 2013-09-23 |
KR101750133B1 (ko) | 2017-06-22 |
US9452452B2 (en) | 2016-09-27 |
CN103311155B (zh) | 2016-12-28 |
JP5596071B2 (ja) | 2014-09-24 |
CN103311155A (zh) | 2013-09-18 |
TWI522184B (zh) | 2016-02-21 |
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