JP2013171843A5 - - Google Patents
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- Publication number
- JP2013171843A5 JP2013171843A5 JP2012032682A JP2012032682A JP2013171843A5 JP 2013171843 A5 JP2013171843 A5 JP 2013171843A5 JP 2012032682 A JP2012032682 A JP 2012032682A JP 2012032682 A JP2012032682 A JP 2012032682A JP 2013171843 A5 JP2013171843 A5 JP 2013171843A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- processing chamber
- gas
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 40
- 239000007789 gas Substances 0.000 claims 25
- 238000010438 heat treatment Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 230000005284 excitation Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012032682A JP6066571B2 (ja) | 2012-02-17 | 2012-02-17 | 基板処理装置及び半導体装置の製造方法 |
| KR1020130016322A KR101435866B1 (ko) | 2012-02-17 | 2013-02-15 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
| US13/769,505 US9147573B2 (en) | 2012-02-17 | 2013-02-18 | Substrate processing apparatus and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012032682A JP6066571B2 (ja) | 2012-02-17 | 2012-02-17 | 基板処理装置及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013171843A JP2013171843A (ja) | 2013-09-02 |
| JP2013171843A5 true JP2013171843A5 (enExample) | 2015-03-19 |
| JP6066571B2 JP6066571B2 (ja) | 2017-01-25 |
Family
ID=49218673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012032682A Active JP6066571B2 (ja) | 2012-02-17 | 2012-02-17 | 基板処理装置及び半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9147573B2 (enExample) |
| JP (1) | JP6066571B2 (enExample) |
| KR (1) | KR101435866B1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018052476A1 (en) | 2016-09-14 | 2018-03-22 | Applied Materials, Inc. | Steam oxidation initiation for high aspect ratio conformal radical oxidation |
| US20240360559A1 (en) * | 2023-04-25 | 2024-10-31 | Applied Materials, Inc. | Plenum driven hydroxyl combustion oxidation |
| US20240360996A1 (en) * | 2023-04-25 | 2024-10-31 | Applied Materials, Inc. | Orifice surrounded low pressure hydroxyl combustion |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002008999A (ja) * | 2000-06-23 | 2002-01-11 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP4669605B2 (ja) * | 2000-11-20 | 2011-04-13 | 東京エレクトロン株式会社 | 半導体製造装置のクリーニング方法 |
| US6559039B2 (en) * | 2001-05-15 | 2003-05-06 | Applied Materials, Inc. | Doped silicon deposition process in resistively heated single wafer chamber |
| JP2004128019A (ja) * | 2002-09-30 | 2004-04-22 | Applied Materials Inc | プラズマ処理方法及び装置 |
| WO2006098300A1 (ja) * | 2005-03-16 | 2006-09-21 | Hitachi Kokusai Electric Inc. | 基板処理方法及び基板処理装置 |
| JP4829013B2 (ja) | 2006-06-14 | 2011-11-30 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP4961179B2 (ja) * | 2006-08-08 | 2012-06-27 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| JP2008091667A (ja) * | 2006-10-03 | 2008-04-17 | Hitachi Kokusai Electric Inc | 基板処理方法 |
| US8083963B2 (en) * | 2007-02-08 | 2011-12-27 | Applied Materials, Inc. | Removal of process residues on the backside of a substrate |
| JP5564311B2 (ja) * | 2009-05-19 | 2014-07-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及び基板の製造方法 |
| JP5396180B2 (ja) * | 2009-07-27 | 2014-01-22 | 東京エレクトロン株式会社 | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
| JP5548163B2 (ja) * | 2010-09-14 | 2014-07-16 | 株式会社日立国際電気 | 基板搬送機構、基板処理装置および半導体装置の製造方法 |
-
2012
- 2012-02-17 JP JP2012032682A patent/JP6066571B2/ja active Active
-
2013
- 2013-02-15 KR KR1020130016322A patent/KR101435866B1/ko active Active
- 2013-02-18 US US13/769,505 patent/US9147573B2/en active Active
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