JP2013161912A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013161912A5 JP2013161912A5 JP2012021990A JP2012021990A JP2013161912A5 JP 2013161912 A5 JP2013161912 A5 JP 2013161912A5 JP 2012021990 A JP2012021990 A JP 2012021990A JP 2012021990 A JP2012021990 A JP 2012021990A JP 2013161912 A5 JP2013161912 A5 JP 2013161912A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing
- plasma
- substrate
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 37
- 239000000758 substrate Substances 0.000 claims 19
- 239000001257 hydrogen Substances 0.000 claims 17
- 229910052739 hydrogen Inorganic materials 0.000 claims 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 229910052760 oxygen Inorganic materials 0.000 claims 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 11
- 239000001301 oxygen Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021990A JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012021990A JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013161912A JP2013161912A (ja) | 2013-08-19 |
| JP2013161912A5 true JP2013161912A5 (enExample) | 2015-03-19 |
| JP5848626B2 JP5848626B2 (ja) | 2016-01-27 |
Family
ID=49173934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012021990A Active JP5848626B2 (ja) | 2012-02-03 | 2012-02-03 | 半導体装置の製造方法及び基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5848626B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014014907A1 (en) * | 2012-07-16 | 2014-01-23 | Mattson Technology, Inc. | Method for high aspect ratio photoresist removal in pure reducing plasma |
| KR101873804B1 (ko) * | 2016-04-12 | 2018-07-03 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
| JP6902941B2 (ja) | 2017-06-29 | 2021-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849559B2 (en) * | 2002-04-16 | 2005-02-01 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| KR100989974B1 (ko) * | 2005-02-02 | 2010-10-26 | 도쿄엘렉트론가부시키가이샤 | 클리닝 방법 및 플라즈마 처리 방법 |
| JP2010050310A (ja) * | 2008-08-22 | 2010-03-04 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
| CN102224610A (zh) * | 2009-01-21 | 2011-10-19 | 佳能安内华股份有限公司 | 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备 |
-
2012
- 2012-02-03 JP JP2012021990A patent/JP5848626B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017208387A5 (enExample) | ||
| JP2015138913A5 (enExample) | ||
| JP2016131210A5 (enExample) | ||
| JP2014057057A5 (ja) | 増強プラズマ処理システム内でのプラズマ強化エッチングの方法 | |
| JP2016522567A5 (enExample) | ||
| JP2014204050A5 (enExample) | ||
| JP2011006783A5 (enExample) | ||
| JP2015082525A5 (enExample) | ||
| MY155509A (en) | Plasma temperature control apparatus and plasma temperature control method | |
| WO2013098702A3 (en) | Mixed mode pulsing etching in plasma processing systems | |
| JP2014501027A5 (enExample) | ||
| JP2010519783A5 (enExample) | ||
| JP2017045869A5 (enExample) | ||
| JP2014060378A5 (ja) | シリコン窒化膜の成膜方法、及びシリコン窒化膜の成膜装置 | |
| SG10201808148QA (en) | Method of manufacturing semiconductor device, substrate processing apparatus and program | |
| CA2690414A1 (en) | Ozone production by pressure swing adsorption using a noble gas additive | |
| JP2014195066A5 (ja) | 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム | |
| JP2013161912A5 (enExample) | ||
| WO2009031475A1 (ja) | 水素発生器及び燃料スティック | |
| JP2015018885A5 (enExample) | ||
| TW200943412A (en) | Method of manufacturing a semiconductor device and a device for treating substrate | |
| JP2006073722A5 (enExample) | ||
| JP2013080907A5 (enExample) | ||
| JP2011198983A5 (enExample) | ||
| JP5031066B2 (ja) | クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法 |