JP5848626B2 - 半導体装置の製造方法及び基板処理装置 - Google Patents

半導体装置の製造方法及び基板処理装置 Download PDF

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JP5848626B2
JP5848626B2 JP2012021990A JP2012021990A JP5848626B2 JP 5848626 B2 JP5848626 B2 JP 5848626B2 JP 2012021990 A JP2012021990 A JP 2012021990A JP 2012021990 A JP2012021990 A JP 2012021990A JP 5848626 B2 JP5848626 B2 JP 5848626B2
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gas
processing
plasma
substrate
hydrogen
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JP2013161912A (ja
JP2013161912A5 (enExample
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真 檜山
真 檜山
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2012021990A 2012-02-03 2012-02-03 半導体装置の製造方法及び基板処理装置 Active JP5848626B2 (ja)

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JP2012021990A JP5848626B2 (ja) 2012-02-03 2012-02-03 半導体装置の製造方法及び基板処理装置

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JP2012021990A JP5848626B2 (ja) 2012-02-03 2012-02-03 半導体装置の製造方法及び基板処理装置

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JP2013161912A JP2013161912A (ja) 2013-08-19
JP2013161912A5 JP2013161912A5 (enExample) 2015-03-19
JP5848626B2 true JP5848626B2 (ja) 2016-01-27

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014014907A1 (en) * 2012-07-16 2014-01-23 Mattson Technology, Inc. Method for high aspect ratio photoresist removal in pure reducing plasma
KR101873804B1 (ko) * 2016-04-12 2018-07-03 피에스케이 주식회사 기판 처리 장치 및 방법
JP6902941B2 (ja) 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849559B2 (en) * 2002-04-16 2005-02-01 Tokyo Electron Limited Method for removing photoresist and etch residues
KR100989974B1 (ko) * 2005-02-02 2010-10-26 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 방법
JP2010050310A (ja) * 2008-08-22 2010-03-04 Fujitsu Microelectronics Ltd 半導体装置の製造方法
CN102224610A (zh) * 2009-01-21 2011-10-19 佳能安内华股份有限公司 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备

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