JP2013135194A - 描画装置及び物品の製造方法 - Google Patents

描画装置及び物品の製造方法 Download PDF

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Publication number
JP2013135194A
JP2013135194A JP2011286620A JP2011286620A JP2013135194A JP 2013135194 A JP2013135194 A JP 2013135194A JP 2011286620 A JP2011286620 A JP 2011286620A JP 2011286620 A JP2011286620 A JP 2011286620A JP 2013135194 A JP2013135194 A JP 2013135194A
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JP
Japan
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mark
area
information
drawn
substrate
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JP2011286620A
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English (en)
Japanese (ja)
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JP2013135194A5 (enExample
Inventor
Masafumi Furutoku
雅史 古徳
Kuniyasu Haginiwa
邦保 萩庭
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011286620A priority Critical patent/JP2013135194A/ja
Priority to US13/705,754 priority patent/US8779396B2/en
Publication of JP2013135194A publication Critical patent/JP2013135194A/ja
Publication of JP2013135194A5 publication Critical patent/JP2013135194A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2011286620A 2011-12-27 2011-12-27 描画装置及び物品の製造方法 Pending JP2013135194A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011286620A JP2013135194A (ja) 2011-12-27 2011-12-27 描画装置及び物品の製造方法
US13/705,754 US8779396B2 (en) 2011-12-27 2012-12-05 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011286620A JP2013135194A (ja) 2011-12-27 2011-12-27 描画装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
JP2013135194A true JP2013135194A (ja) 2013-07-08
JP2013135194A5 JP2013135194A5 (enExample) 2015-02-19

Family

ID=48654894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011286620A Pending JP2013135194A (ja) 2011-12-27 2011-12-27 描画装置及び物品の製造方法

Country Status (2)

Country Link
US (1) US8779396B2 (enExample)
JP (1) JP2013135194A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122676A (ja) * 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5825291B2 (ja) * 2013-04-15 2015-12-02 コニカミノルタ株式会社 画像形成装置及び基準画像の読取方法
JP2016004881A (ja) * 2014-06-16 2016-01-12 キヤノン株式会社 リソグラフィ装置、及び物品の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304080A (ja) * 1991-08-15 1993-11-16 Jeol Ltd 荷電粒子ビーム描画方法
JPH07130624A (ja) * 1993-11-02 1995-05-19 Fujitsu Ltd 電子ビーム露光方法
JP2002062636A (ja) * 1991-07-18 2002-02-28 Dainippon Printing Co Ltd アライメントパターンを有するパターン版の描画方法及びその方法によって描画されたパターン版
JP2003086496A (ja) * 2001-09-13 2003-03-20 Nikon Corp 転写マスク、その製造方法及び投影露光方法
JP2005072213A (ja) * 2003-08-22 2005-03-17 Semiconductor Leading Edge Technologies Inc 荷電粒子線露光方法
JP2008521221A (ja) * 2004-11-17 2008-06-19 イーエムエス ナノファブリカツィオン アーゲー 粒子ビーム露光装置のためのパターンロック装置
WO2010110237A1 (ja) * 2009-03-26 2010-09-30 Hoya株式会社 反射型マスク用多層反射膜付基板及び反射型マスクブランク並びにそれらの製造方法
JP2011198952A (ja) * 2010-03-18 2011-10-06 Nuflare Technology Inc 荷電粒子ビーム描画用データの生成方法および荷電粒子ビーム描画用データ生成装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2148121A1 (en) 1992-11-02 1994-05-11 Robin L. Teitzel Rasterizer for a pattern generation apparatus
JP4023262B2 (ja) * 2002-09-02 2007-12-19 ソニー株式会社 アライメント方法、露光方法、露光装置およびマスクの製造方法
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
JP4855875B2 (ja) * 2006-09-06 2012-01-18 富士フイルム株式会社 電子ビーム描画装置及び電子ビームのずれ補償方法
JP5841710B2 (ja) * 2010-03-17 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062636A (ja) * 1991-07-18 2002-02-28 Dainippon Printing Co Ltd アライメントパターンを有するパターン版の描画方法及びその方法によって描画されたパターン版
JPH05304080A (ja) * 1991-08-15 1993-11-16 Jeol Ltd 荷電粒子ビーム描画方法
JPH07130624A (ja) * 1993-11-02 1995-05-19 Fujitsu Ltd 電子ビーム露光方法
JP2003086496A (ja) * 2001-09-13 2003-03-20 Nikon Corp 転写マスク、その製造方法及び投影露光方法
JP2005072213A (ja) * 2003-08-22 2005-03-17 Semiconductor Leading Edge Technologies Inc 荷電粒子線露光方法
JP2008521221A (ja) * 2004-11-17 2008-06-19 イーエムエス ナノファブリカツィオン アーゲー 粒子ビーム露光装置のためのパターンロック装置
WO2010110237A1 (ja) * 2009-03-26 2010-09-30 Hoya株式会社 反射型マスク用多層反射膜付基板及び反射型マスクブランク並びにそれらの製造方法
JP2011198952A (ja) * 2010-03-18 2011-10-06 Nuflare Technology Inc 荷電粒子ビーム描画用データの生成方法および荷電粒子ビーム描画用データ生成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122676A (ja) * 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法

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US20130164692A1 (en) 2013-06-27
US8779396B2 (en) 2014-07-15

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