JP2013132014A - 回路基板 - Google Patents
回路基板 Download PDFInfo
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- JP2013132014A JP2013132014A JP2011282012A JP2011282012A JP2013132014A JP 2013132014 A JP2013132014 A JP 2013132014A JP 2011282012 A JP2011282012 A JP 2011282012A JP 2011282012 A JP2011282012 A JP 2011282012A JP 2013132014 A JP2013132014 A JP 2013132014A
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- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000005540 biological transmission Effects 0.000 claims abstract description 57
- 239000004020 conductor Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 6
- 101150092978 Slc25a4 gene Proteins 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 101150041689 SLC25A5 gene Proteins 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/09—Filters comprising mutual inductance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Transceivers (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明は、導体層40、42、44、46、48及び50と絶縁層30、32、34、36及び38とが積層されて形成された積層基板28と、積層基板28に内蔵された送信フィルタチップ10a及び受信フィルタチップ10bと、送信フィルタチップ10a及び受信フィルタチップ10bを積層基板28の厚さ方向に投影して形成される投影領域10c及び10dと少なくとも一部が重なるように積層基板28の上面に設けられ、かつ送信フィルタチップ10a及び受信フィルタチップ10bと接続されたチップ部品12a及び14aと、を具備する回路基板である。
【選択図】図3
Description
10a 送信フィルタチップ
10b 受信フィルタチップ
10c、10d 投影領域
12、14、16 マッチング回路
12a、14a、14b、16a チップ部品
18 PA
18a 能動部品
28 積層基板
30、32、34、36、37、38 絶縁層
40、42、44、46、48、50 導体層
40a 配線
52、52a ビア配線
54 コア
54a、54b 開口部
100、200、300、400 回路基板
Ant1、Ant2 アンテナノード
Rx1、Rx2 受信ノード
Tx1、Tx2 送信ノード
Claims (8)
- 導体層と絶縁層とが積層されて形成された積層基板と、
弾性波フィルタが形成され、前記積層基板に内蔵されたフィルタチップと、
前記フィルタチップを前記積層基板の厚さ方向に投影して形成される投影領域と少なくとも一部が重なるように前記積層基板の表面に設けられ、かつ前記フィルタチップと接続されたチップ部品と、を具備することを特徴とする回路基板。 - 前記チップ部品の全体が前記投影領域の内側に位置することを特徴とする請求項1記載の回路基板。
- 複数の前記チップ部品の全体が前記投影領域の内側に位置することを特徴とする請求項1又は2記載の回路基板。
- 前記フィルタチップと前記チップ部品とは、別のチップ部品を介さず直接接続されていることを特徴とする請求項1から3いずれか一項記載の回路基板。
- 複数の前記フィルタチップは送信フィルタが形成された送信フィルタチップ、及び受信フィルタが形成された受信フィルタチップを含むことを特徴とする請求項1から4いずれか一項記載の回路基板。
- 前記送信フィルタチップは送信ノードと共通ノードとの間に接続され、前記受信フィルタチップは受信ノードと前記共通ノードとの間に接続され、
複数の前記チップ部品は、前記共通ノードとアンテナとの間に接続される第1チップ部品、前記送信ノードと電子部品との間に接続される第2チップ部品、前記受信ノードと前記電子部品との間に接続される第3チップ部品を含み、
前記第1チップ部品は、前記送信フィルタチップを前記積層基板の厚さ方向に投影して形成される第1投影領域、又は前記受信フィルタチップを前記積層基板の厚さ方向に投影して形成される第2投影領域と重なり、
前記第2チップ部品は前記第1投影領域と重なり、
前記第3チップ部品は前記第2投影領域と重なることを特徴とする請求項5記載の回路基板。 - 前記フィルタチップと前記チップ部品とを接続する配線のうち、前記積層基板の面方向に延びる第1配線は、前記積層基板の厚さ方向に延びる第2配線より短いことを特徴とする請求項1から6いずれか一項記載の回路基板。
- 前記積層基板は金属からなるコアを含み、
前記フィルタチップは前記コアに形成された開口部に内蔵されていることを特徴とする請求項1から7いずれか一項記載の回路基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011282012A JP5241909B2 (ja) | 2011-12-22 | 2011-12-22 | 回路基板 |
US13/662,982 US20130162367A1 (en) | 2011-12-22 | 2012-10-29 | Circuit substrate |
EP12190574.9A EP2608407B1 (en) | 2011-12-22 | 2012-10-30 | Circuit substrate for duplexers |
TW101140612A TWI451818B (zh) | 2011-12-22 | 2012-11-01 | 電路基板 |
CN201210535433.8A CN103179779B (zh) | 2011-12-22 | 2012-12-12 | 电路基板 |
KR1020120151060A KR101389149B1 (ko) | 2011-12-22 | 2012-12-21 | 회로 기판 |
US14/226,712 US8917520B2 (en) | 2011-12-22 | 2014-03-26 | Circuit substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011282012A JP5241909B2 (ja) | 2011-12-22 | 2011-12-22 | 回路基板 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013077250A Division JP5888786B2 (ja) | 2013-04-02 | 2013-04-02 | 回路基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013132014A true JP2013132014A (ja) | 2013-07-04 |
JP5241909B2 JP5241909B2 (ja) | 2013-07-17 |
Family
ID=47143615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011282012A Active JP5241909B2 (ja) | 2011-12-22 | 2011-12-22 | 回路基板 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20130162367A1 (ja) |
EP (1) | EP2608407B1 (ja) |
JP (1) | JP5241909B2 (ja) |
KR (1) | KR101389149B1 (ja) |
CN (1) | CN103179779B (ja) |
TW (1) | TWI451818B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015130601A (ja) * | 2014-01-07 | 2015-07-16 | 太陽誘電株式会社 | モジュール |
US9634641B2 (en) | 2013-11-06 | 2017-04-25 | Taiyo Yuden Co., Ltd. | Electronic module having an interconnection substrate with a buried electronic device therein |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9263425B2 (en) * | 2013-12-11 | 2016-02-16 | Infineon Technologies Austria Ag | Semiconductor device including multiple semiconductor chips and a laminate |
CN107005228B (zh) * | 2014-12-04 | 2020-07-14 | 株式会社村田制作所 | 电子部件及其制造方法 |
US9660609B2 (en) * | 2015-07-07 | 2017-05-23 | Skyworks Solutions, Inc. | Devices and methods related to stacked duplexers |
US10312193B2 (en) | 2016-08-12 | 2019-06-04 | Qualcomm Incorporated | Package comprising switches and filters |
CN111164832B (zh) | 2017-09-14 | 2023-11-21 | 株式会社村田制作所 | 天线模块和通信装置 |
DE102018106028A1 (de) * | 2018-03-15 | 2019-09-19 | RF360 Europe GmbH | Multiplexer und einen Multiplexer umfassendes Frontend-Modul |
EP3907760A1 (en) * | 2020-05-08 | 2021-11-10 | Infineon Technologies Austria AG | Semiconductor module |
CN115836442A (zh) * | 2020-05-25 | 2023-03-21 | 株式会社Kmw | 天线装置 |
Citations (6)
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JP2001244638A (ja) * | 1999-12-20 | 2001-09-07 | Matsushita Electric Ind Co Ltd | 回路部品内蔵モジュール及びその製造方法 |
JP2002084070A (ja) * | 2000-09-08 | 2002-03-22 | Hitachi Aic Inc | 電子部品内蔵型多層配線板 |
JP2002344146A (ja) * | 2001-05-15 | 2002-11-29 | Tdk Corp | 高周波モジュールとその製造方法 |
JP2002359327A (ja) * | 2001-03-28 | 2002-12-13 | Kyocera Corp | 電子回路モジュール |
JP2004282175A (ja) * | 2003-03-12 | 2004-10-07 | Kyocera Corp | ダイプレクサ内蔵配線基板 |
JP2007273585A (ja) * | 2006-03-30 | 2007-10-18 | Sony Corp | マイクロデバイスモジュール及びその製造方法 |
Family Cites Families (11)
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JP2001189605A (ja) | 1999-10-21 | 2001-07-10 | Matsushita Electric Ind Co Ltd | セラミック積層rfデバイス |
JP4685979B2 (ja) | 2000-02-21 | 2011-05-18 | 日本特殊陶業株式会社 | 配線基板 |
JP4020644B2 (ja) * | 2002-01-09 | 2007-12-12 | アルプス電気株式会社 | Sawフィルタモジュール |
US6873529B2 (en) * | 2002-02-26 | 2005-03-29 | Kyocera Corporation | High frequency module |
TW200520201A (en) * | 2003-10-08 | 2005-06-16 | Kyocera Corp | High-frequency module and communication apparatus |
US7961478B2 (en) * | 2004-04-16 | 2011-06-14 | Nxp B.V. | Integrated circuit, and a mobile phone having the integrated circuit |
DE102006016345A1 (de) * | 2006-04-05 | 2007-10-18 | Infineon Technologies Ag | Halbleitermodul mit diskreten Bauelementen und Verfahren zur Herstellung desselben |
KR101276944B1 (ko) | 2008-12-26 | 2013-06-19 | 다이요 유덴 가부시키가이샤 | 분파기 및 전자 장치 |
JP5149881B2 (ja) * | 2009-09-30 | 2013-02-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2011176061A (ja) | 2010-02-23 | 2011-09-08 | Panasonic Corp | 半導体装置 |
JP5241910B2 (ja) | 2011-12-22 | 2013-07-17 | 太陽誘電株式会社 | 回路基板 |
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2011
- 2011-12-22 JP JP2011282012A patent/JP5241909B2/ja active Active
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2012
- 2012-10-29 US US13/662,982 patent/US20130162367A1/en not_active Abandoned
- 2012-10-30 EP EP12190574.9A patent/EP2608407B1/en active Active
- 2012-11-01 TW TW101140612A patent/TWI451818B/zh active
- 2012-12-12 CN CN201210535433.8A patent/CN103179779B/zh active Active
- 2012-12-21 KR KR1020120151060A patent/KR101389149B1/ko active IP Right Grant
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JP2001244638A (ja) * | 1999-12-20 | 2001-09-07 | Matsushita Electric Ind Co Ltd | 回路部品内蔵モジュール及びその製造方法 |
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Cited By (2)
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US9634641B2 (en) | 2013-11-06 | 2017-04-25 | Taiyo Yuden Co., Ltd. | Electronic module having an interconnection substrate with a buried electronic device therein |
JP2015130601A (ja) * | 2014-01-07 | 2015-07-16 | 太陽誘電株式会社 | モジュール |
Also Published As
Publication number | Publication date |
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US8917520B2 (en) | 2014-12-23 |
KR20130079213A (ko) | 2013-07-10 |
US20130162367A1 (en) | 2013-06-27 |
CN103179779A (zh) | 2013-06-26 |
TWI451818B (zh) | 2014-09-01 |
KR101389149B1 (ko) | 2014-04-24 |
JP5241909B2 (ja) | 2013-07-17 |
CN103179779B (zh) | 2016-03-02 |
TW201328448A (zh) | 2013-07-01 |
EP2608407A2 (en) | 2013-06-26 |
EP2608407A3 (en) | 2014-05-14 |
US20140204549A1 (en) | 2014-07-24 |
EP2608407B1 (en) | 2018-09-19 |
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