JP2013087346A - 透明電極膜のクリーニング方法 - Google Patents
透明電極膜のクリーニング方法 Download PDFInfo
- Publication number
- JP2013087346A JP2013087346A JP2011230774A JP2011230774A JP2013087346A JP 2013087346 A JP2013087346 A JP 2013087346A JP 2011230774 A JP2011230774 A JP 2011230774A JP 2011230774 A JP2011230774 A JP 2011230774A JP 2013087346 A JP2013087346 A JP 2013087346A
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- JP
- Japan
- Prior art keywords
- chamber
- hydrogen
- zinc oxide
- methyl chloride
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000007789 gas Substances 0.000 claims abstract description 38
- 239000011787 zinc oxide Substances 0.000 claims abstract description 33
- 239000001257 hydrogen Substances 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 29
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 16
- 229940050176 methyl chloride Drugs 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims description 2
- 230000001464 adherent effect Effects 0.000 abstract 1
- 238000011017 operating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】透明導電膜として酸化亜鉛膜を生成する透明導電膜生成装置のチャンバー内面に付着した酸化亜鉛膜クリーニングするに当たり、チャンバー内を塩化メチルガスと水素ガスとで水素リッチの塩化メチルー水素混合ガス雰囲気に形成し、この塩化メチルー水素混合ガス雰囲気にあるチャンバー内にプラズマを発生させてチャンバー内面に付着した透明電極膜を除去する。
【選択図】なし
Description
Claims (3)
- 透明導電膜として酸化亜鉛膜を生成する透明導電膜生成装置のチャンバー内面に付着した酸化亜鉛膜クリーニングするに当たり、チャンバー内を塩化メチルガスと水素ガスとで水素リッチの塩化メチルー水素混合ガス雰囲気に形成し、この塩化メチルー水素混合ガス雰囲気にあるチャンバー内にプラズマを発生させてチャンバー内面に付着した酸化亜鉛膜を除去するようにしたことを特徴とする透明電極膜のクリーニング方法。
- 酸化亜鉛を主成分とする透明導電膜を生成するチャンバー内面に付着した透明導電膜をクリーニングするに当たり、チャンバー内を塩化メチルガスと水素ガスとで水素リッチの塩化メチルー水素混合ガス雰囲気に形成し、この塩化メチルー水素混合ガス雰囲気にあるチャンバー内にプラズマを発生させてチャンバー内面に付着した透明導電膜を除去するようにしたことを特徴とする透明導電膜のクリーニング方法。
- 塩化メチルガスと水素ガスの混合比率が、塩化メチルガスに対して水素ガスを10倍以上添加したものである請求項1または2に記載の透明電極膜のクリーニング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011230774A JP5699065B2 (ja) | 2011-10-20 | 2011-10-20 | 透明電極膜のクリーニング方法 |
TW101109127A TWI500081B (zh) | 2011-10-20 | 2012-03-16 | Cleaning method of transparent electrode film |
PCT/JP2012/074068 WO2013058050A1 (ja) | 2011-10-20 | 2012-09-20 | 透明電極膜のクリーニング方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2011230774A JP5699065B2 (ja) | 2011-10-20 | 2011-10-20 | 透明電極膜のクリーニング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013087346A true JP2013087346A (ja) | 2013-05-13 |
JP5699065B2 JP5699065B2 (ja) | 2015-04-08 |
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JP2011230774A Active JP5699065B2 (ja) | 2011-10-20 | 2011-10-20 | 透明電極膜のクリーニング方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5699065B2 (ja) |
TW (1) | TWI500081B (ja) |
WO (1) | WO2013058050A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021513739A (ja) * | 2018-02-08 | 2021-05-27 | ジュソン エンジニアリング カンパニー リミテッド | チャンバ洗浄装置及びチャンバ洗浄方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173978A (ja) * | 2001-12-07 | 2003-06-20 | Dowa Mining Co Ltd | 半導体薄膜製造装置のクリーニング方法および装置 |
JP2009167020A (ja) * | 2008-01-10 | 2009-07-30 | Hitachi Maxell Ltd | 被洗浄部材の洗浄方法および光学素子の製造方法 |
JP2010503977A (ja) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムの洗浄方法 |
JP2010132939A (ja) * | 2008-12-02 | 2010-06-17 | Alps Electric Co Ltd | イオンプレーティング装置および成膜方法 |
-
2011
- 2011-10-20 JP JP2011230774A patent/JP5699065B2/ja active Active
-
2012
- 2012-03-16 TW TW101109127A patent/TWI500081B/zh active
- 2012-09-20 WO PCT/JP2012/074068 patent/WO2013058050A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173978A (ja) * | 2001-12-07 | 2003-06-20 | Dowa Mining Co Ltd | 半導体薄膜製造装置のクリーニング方法および装置 |
JP2010503977A (ja) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムの洗浄方法 |
JP2009167020A (ja) * | 2008-01-10 | 2009-07-30 | Hitachi Maxell Ltd | 被洗浄部材の洗浄方法および光学素子の製造方法 |
JP2010132939A (ja) * | 2008-12-02 | 2010-06-17 | Alps Electric Co Ltd | イオンプレーティング装置および成膜方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021513739A (ja) * | 2018-02-08 | 2021-05-27 | ジュソン エンジニアリング カンパニー リミテッド | チャンバ洗浄装置及びチャンバ洗浄方法 |
JP7431738B2 (ja) | 2018-02-08 | 2024-02-15 | ジュソン エンジニアリング カンパニー リミテッド | チャンバ洗浄装置及びチャンバ洗浄方法 |
US12065734B2 (en) | 2018-02-08 | 2024-08-20 | Jusung Engineering Co., Ltd. | Chamber cleaning device and chamber cleaning method |
Also Published As
Publication number | Publication date |
---|---|
WO2013058050A1 (ja) | 2013-04-25 |
TW201318060A (zh) | 2013-05-01 |
JP5699065B2 (ja) | 2015-04-08 |
TWI500081B (zh) | 2015-09-11 |
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